ATE321157T1 - Magnetfeldofen und betriebsverfahren zur herstellung von bandförmigen dendritischen kristallen - Google Patents

Magnetfeldofen und betriebsverfahren zur herstellung von bandförmigen dendritischen kristallen

Info

Publication number
ATE321157T1
ATE321157T1 AT01994474T AT01994474T ATE321157T1 AT E321157 T1 ATE321157 T1 AT E321157T1 AT 01994474 T AT01994474 T AT 01994474T AT 01994474 T AT01994474 T AT 01994474T AT E321157 T1 ATE321157 T1 AT E321157T1
Authority
AT
Austria
Prior art keywords
magnetic field
dendritic crystals
producing tape
shaped dendritic
field furnace
Prior art date
Application number
AT01994474T
Other languages
English (en)
Inventor
Hilton F Glavish
Hideyuki Isozaki
Keiji Maishigi
Kentaro Fujita
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of ATE321157T1 publication Critical patent/ATE321157T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Woven Fabrics (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
AT01994474T 2000-12-29 2001-12-28 Magnetfeldofen und betriebsverfahren zur herstellung von bandförmigen dendritischen kristallen ATE321157T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/750,935 US6482261B2 (en) 2000-12-29 2000-12-29 Magnetic field furnace

Publications (1)

Publication Number Publication Date
ATE321157T1 true ATE321157T1 (de) 2006-04-15

Family

ID=25019742

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01994474T ATE321157T1 (de) 2000-12-29 2001-12-28 Magnetfeldofen und betriebsverfahren zur herstellung von bandförmigen dendritischen kristallen

Country Status (12)

Country Link
US (3) US6482261B2 (de)
EP (1) EP1348047B1 (de)
JP (1) JP2004517797A (de)
CN (1) CN1243854C (de)
AT (1) ATE321157T1 (de)
AU (1) AU2002246865B2 (de)
BR (1) BR0116594A (de)
CA (1) CA2432396A1 (de)
DE (1) DE60118247T2 (de)
ES (1) ES2260330T3 (de)
MX (2) MXPA03005947A (de)
WO (1) WO2002059399A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3844499A (en) * 1999-05-07 2000-11-21 Salviac Limited Improved filter element for embolic protection device
US20040127680A1 (en) * 2002-11-08 2004-07-01 Illinois Tool Works Inc. Vinyl ester adhesive compositions
FR2865740B1 (fr) * 2004-01-30 2007-06-22 Centre Nat Rech Scient Procede et dispositif de fabrication de monocristaux
US8057598B2 (en) * 2006-06-13 2011-11-15 Young Sang Cho Manufacturing equipment for polysilicon ingot
US7834622B2 (en) * 2007-10-18 2010-11-16 Baker Hughes Incorporated Configurable magnet assembly for using in NMR well logging instrument
US8374914B2 (en) * 2008-08-06 2013-02-12 Obschestvo S Ogranichennoi Otvetstvennostiu “Kuznetch” Advertising using image comparison

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
US4934446A (en) 1980-10-06 1990-06-19 Olin Corporation Apparatus for recrystallization of thin strip material
US4627887A (en) 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
DE3231267A1 (de) 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231326A1 (de) 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3306515A1 (de) 1983-02-24 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
US4861416A (en) 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
GB2198966A (en) * 1986-12-09 1988-06-29 Westinghouse Electric Corp Method of growing silicon dendritic-web crystals
US4971650A (en) 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
JPH07267776A (ja) 1994-03-31 1995-10-17 Sumitomo Sitix Corp 結晶成長方法
KR19990063990A (ko) 1995-10-05 1999-07-26 로시 리차드 부분적으로 깊게 확산된 에미터가 있는 자가조정식(salde) 태양 전지 및 그 제조 방법
JP2716023B2 (ja) 1995-11-22 1998-02-18 日本電気株式会社 シリコン単結晶育成装置
KR0176328B1 (ko) 1995-12-19 1999-03-20 김은영 축방향 자기장을 인가할 수 있는 수직온도 구배냉각 및 수직브릿지만 화합물 반도체 단결정 성장장치
JP3402041B2 (ja) 1995-12-28 2003-04-28 信越半導体株式会社 シリコン単結晶の製造装置
JP3598634B2 (ja) 1996-01-30 2004-12-08 信越半導体株式会社 シリコン単結晶の製造方法
WO1997032059A1 (fr) 1996-02-29 1997-09-04 Sumitomo Sitix Corporation Procede et appareil pour retirer un monocristal
US6093244A (en) 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
GB9617540D0 (en) 1996-08-21 1996-10-02 Tesla Engineering Ltd Magnetic field generation
US5858084A (en) 1997-02-28 1999-01-12 Massachusetts Institute Of Technology Crystal growth under the combined effect of gravity and magnetic field
US6402839B1 (en) * 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth

Also Published As

Publication number Publication date
WO2002059399A2 (en) 2002-08-01
AU2002246865B2 (en) 2006-11-09
JP2004517797A (ja) 2004-06-17
DE60118247T2 (de) 2006-12-28
CN1243854C (zh) 2006-03-01
US20030010282A1 (en) 2003-01-16
US20030097978A1 (en) 2003-05-29
CN1484715A (zh) 2004-03-24
US6482261B2 (en) 2002-11-19
US6673148B2 (en) 2004-01-06
ES2260330T3 (es) 2006-11-01
MXPA03005947A (es) 2004-10-15
US20020121237A1 (en) 2002-09-05
DE60118247D1 (de) 2006-05-11
MXPA06003634A (es) 2006-06-20
EP1348047B1 (de) 2006-03-22
BR0116594A (pt) 2004-07-06
US6669776B2 (en) 2003-12-30
EP1348047A2 (de) 2003-10-01
CA2432396A1 (en) 2002-08-01
WO2002059399A3 (en) 2002-10-24

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