ATE322084T1 - Kondensator mit variabler kapazität - Google Patents

Kondensator mit variabler kapazität

Info

Publication number
ATE322084T1
ATE322084T1 AT01931828T AT01931828T ATE322084T1 AT E322084 T1 ATE322084 T1 AT E322084T1 AT 01931828 T AT01931828 T AT 01931828T AT 01931828 T AT01931828 T AT 01931828T AT E322084 T1 ATE322084 T1 AT E322084T1
Authority
AT
Austria
Prior art keywords
zones
type
recesses
regions
capacitor
Prior art date
Application number
AT01931828T
Other languages
English (en)
Inventor
Jean-Louis Sanchez
Jean-Pierre Laur
Hedi Hakim
Patrick Austin
Jean Jalade
Marie Breil
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE322084T1 publication Critical patent/ATE322084T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Control Of Eletrric Generators (AREA)
AT01931828T 2000-05-09 2001-05-09 Kondensator mit variabler kapazität ATE322084T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0005887A FR2808924B1 (fr) 2000-05-09 2000-05-09 Condenseur a capacite variable

Publications (1)

Publication Number Publication Date
ATE322084T1 true ATE322084T1 (de) 2006-04-15

Family

ID=8850021

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01931828T ATE322084T1 (de) 2000-05-09 2001-05-09 Kondensator mit variabler kapazität

Country Status (9)

Country Link
US (1) US6703681B2 (de)
EP (1) EP1287564B1 (de)
JP (1) JP4868683B2 (de)
AT (1) ATE322084T1 (de)
AU (1) AU2001258520A1 (de)
CA (1) CA2409683C (de)
DE (1) DE60118358T2 (de)
FR (1) FR2808924B1 (de)
WO (1) WO2001086729A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080157159A1 (en) * 2006-12-28 2008-07-03 International Business Machines Corporation Highly tunable metal-on-semiconductor varactor
US7989922B2 (en) * 2008-02-08 2011-08-02 International Business Machines Corporation Highly tunable metal-on-semiconductor trench varactor
WO2009151397A1 (en) * 2008-06-13 2009-12-17 Qunano Ab Nanostructured mos capacitor
US8722503B2 (en) * 2010-07-16 2014-05-13 Texas Instruments Incorporated Capacitors and methods of forming
US9318485B2 (en) * 2012-08-10 2016-04-19 Infineon Technologies Ag Capacitor arrangements and method for manufacturing a capacitor arrangement
EP2999002A1 (de) * 2014-09-18 2016-03-23 Services Petroliers Schlumberger Kondensatorzelle und Verfahren zu ihrer Herstellung
CN117238974B (zh) * 2023-09-21 2024-06-07 扬州国宇电子有限公司 一种等差式多环区的超突变变容二极管及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
GB1439351A (en) * 1972-06-02 1976-06-16 Texas Instruments Inc Capacitor
US4017885A (en) * 1973-10-25 1977-04-12 Texas Instruments Incorporated Large value capacitor
JPS5690566A (en) * 1979-12-24 1981-07-22 Mitsubishi Electric Corp Semiconductor device
JPS5816577A (ja) * 1981-07-23 1983-01-31 Clarion Co Ltd 半導体装置
JPS5933884A (ja) * 1982-08-19 1984-02-23 Matsushita Electronics Corp 可変容量ダイオ−ド
DE19631389A1 (de) * 1995-08-29 1997-03-06 Hewlett Packard Co Monolithischer spannungsvariabler Kondensator
JP3934352B2 (ja) * 2000-03-31 2007-06-20 Ｔｄｋ株式会社 積層型セラミックチップコンデンサとその製造方法
US6484054B2 (en) * 2000-06-12 2002-11-19 Medtronic, Inc. Deep trench semiconductor capacitors having reverse bias diodes for implantable medical devices

Also Published As

Publication number Publication date
CA2409683A1 (en) 2001-11-15
FR2808924A1 (fr) 2001-11-16
CA2409683C (en) 2010-02-23
US6703681B2 (en) 2004-03-09
AU2001258520A1 (en) 2001-11-20
JP2003535461A (ja) 2003-11-25
DE60118358D1 (de) 2006-05-18
US20030183866A1 (en) 2003-10-02
JP4868683B2 (ja) 2012-02-01
EP1287564B1 (de) 2006-03-29
FR2808924B1 (fr) 2002-08-16
EP1287564A1 (de) 2003-03-05
WO2001086729A1 (fr) 2001-11-15
DE60118358T2 (de) 2006-12-14

Similar Documents

Publication Publication Date Title
US8441054B2 (en) Driver for driving a load using a charge pump circuit
TW200505033A (en) Capacitor and method of fabricating the same
ATE318007T1 (de) Photolithographisch strukturierte variable kondensatorstrukturen und herstellungsverfahren
SE9703295D0 (sv) Electrical devices and a method of manufacturing the same
WO2007054858A3 (en) Integrated capacitor arrangement for ultrahigh capacitance values
KR100480603B1 (ko) 일정한 커패시턴스를 갖는 금속-절연체-금속 커패시터를 포함하는 반도체 소자
EA200100542A1 (ru) Сегнетоэлектрический варактор со встроенными устройствами блокирования прохождения постоянного тока
WO2004055868A3 (en) Integrated circuit modification using well implants
ATE322084T1 (de) Kondensator mit variabler kapazität
ATE431614T1 (de) Stapelkondensator mit durch ein leitfähiges polymer getrennten aluminiumelektroden
TWI257114B (en) Integrated capacitor
WO2003046974A3 (de) Kondensator und verfahren zum herstellen eines kondensators
DE60123388D1 (de) Kondensatorelement für einen power-kondensator, power-kondensator mit einem solchen element und metallisierter film für einen power-kondensator
KR960012465A (ko) 반도체 디바이스 및 그 제조 방법
KR910013571A (ko) 유전물질에 의해 분리되어 있는 전극쌍이 포함된 다양한 소자를 구비한 직접회로의 제조방법
KR970072432A (ko) Mos 커패시터를 갖는 반도체 디바이스 및 제조 방법
EP1113498A3 (de) Spannungsabhängiger Kondensator mit verbesserter C-V Linearität
KR960019745A (ko) 반도체 디바이스 및 그 제조 방법
KR960032739A (ko) 반도체장치의 커패시터 및 그 제조방법
SE9801118D0 (sv) Electrical device
WO2003017371A3 (de) Integrierte halbleiterschaltung mit einem varaktor
WO2003017362A8 (fr) Circuit integre avec cellule memoire dram
KR960009209A (ko) 반도체 집적회로
TW200507282A (en) Metal insulator metal capacitor
KR970053932A (ko) 트랜지스터의 래치 전압을 이용한 정전 내력 향상 모스 축전기

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties