ATE331692T1 - Batio3 und anwendung desgleichen in elektronischen teilen - Google Patents

Batio3 und anwendung desgleichen in elektronischen teilen

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Publication number
ATE331692T1
ATE331692T1 AT03780908T AT03780908T ATE331692T1 AT E331692 T1 ATE331692 T1 AT E331692T1 AT 03780908 T AT03780908 T AT 03780908T AT 03780908 T AT03780908 T AT 03780908T AT E331692 T1 ATE331692 T1 AT E331692T1
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Austria
Prior art keywords
barium titanate
batio3
electronic parts
reaction mixture
application same
Prior art date
Application number
AT03780908T
Other languages
English (en)
Inventor
Akihiko Shirakawa
Hitoshi Yokouchi
Original Assignee
Showa Denko Kk
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Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE331692T1 publication Critical patent/ATE331692T1/de

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AT03780908T 2002-12-18 2003-12-18 Batio3 und anwendung desgleichen in elektronischen teilen ATE331692T1 (de)

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JP5026242B2 (ja) 2007-12-11 2012-09-12 サムソン エレクトロ−メカニックス カンパニーリミテッド. 誘電体材料の製造方法
JP5344456B2 (ja) * 2008-03-11 2013-11-20 独立行政法人物質・材料研究機構 非鉛系圧電材料
JP5355148B2 (ja) * 2008-03-19 2013-11-27 キヤノン株式会社 圧電材料
JP5219921B2 (ja) * 2008-05-28 2013-06-26 キヤノン株式会社 金属酸化物、圧電材料および圧電素子
JP5354538B2 (ja) 2008-07-30 2013-11-27 キヤノン株式会社 金属酸化物および圧電材料
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JP2010143789A (ja) * 2008-12-18 2010-07-01 Canon Inc 圧電体材料
US20110079883A1 (en) * 2009-10-01 2011-04-07 Canon Kabushiki Kaisha Ferroelectric thin film
CN102452684B (zh) * 2010-10-18 2014-01-29 清华大学 自调控溶剂热一步合成单分散钛酸钡纳米晶的方法
KR20120099979A (ko) * 2011-03-02 2012-09-12 삼성전기주식회사 페로브스카이트 구조를 가지는 세라믹 분말의 제조방법 및 이에 의하여 제조된 페로브스카이트 구조를 가지는 세라믹 분말
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EP2953177B1 (de) 2014-05-30 2017-01-25 Canon Kabushiki Kaisha Piezoelektrisches material, piezoelektrisches element und elektronische vorrichtung
TWI601581B (zh) 2014-05-30 2017-10-11 佳能股份有限公司 壓電材料、壓電元件、壓電元件製造方法和電子設備
CN104034811A (zh) * 2014-06-27 2014-09-10 宜特科技(昆山)电子有限公司 一种pcba板的微量含有物的分析方法
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