ATE332574T1 - Feldeffektbauelement - Google Patents

Feldeffektbauelement

Info

Publication number
ATE332574T1
ATE332574T1 AT01943310T AT01943310T ATE332574T1 AT E332574 T1 ATE332574 T1 AT E332574T1 AT 01943310 T AT01943310 T AT 01943310T AT 01943310 T AT01943310 T AT 01943310T AT E332574 T1 ATE332574 T1 AT E332574T1
Authority
AT
Austria
Prior art keywords
regions
source
drain
trench
conductivity type
Prior art date
Application number
AT01943310T
Other languages
English (en)
Inventor
Raymond J E Hueting
Erwin A Hijzen
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE332574T1 publication Critical patent/ATE332574T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Noodles (AREA)
  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
  • Resistance Heating (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
AT01943310T 2000-05-20 2001-05-01 Feldeffektbauelement ATE332574T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0012137.6A GB0012137D0 (en) 2000-05-20 2000-05-20 A semiconductor device

Publications (1)

Publication Number Publication Date
ATE332574T1 true ATE332574T1 (de) 2006-07-15

Family

ID=9891933

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01943310T ATE332574T1 (de) 2000-05-20 2001-05-01 Feldeffektbauelement

Country Status (7)

Country Link
US (1) US6559502B2 (de)
EP (1) EP1295342B1 (de)
JP (1) JP2003534665A (de)
AT (1) ATE332574T1 (de)
DE (1) DE60121331T2 (de)
GB (1) GB0012137D0 (de)
WO (1) WO2001091189A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2895569A1 (fr) * 2005-12-26 2007-06-29 St Microelectronics Sa Transistor mos de puissance a jonctions verticales et a forte tension de claquage
US20070166972A1 (en) * 2005-12-29 2007-07-19 Young-Tack Park Semiconductor device and manufacturing method
US7804150B2 (en) * 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
US7902606B2 (en) * 2008-01-11 2011-03-08 International Business Machines Corporation Double gate depletion mode MOSFET
US20120091516A1 (en) * 2010-04-15 2012-04-19 Robert Kuo-Chang Yang Lateral Floating Coupled Capacitor Device Termination Structures
JP5852913B2 (ja) * 2012-03-27 2016-02-03 ルネサスエレクトロニクス株式会社 半導体装置
US10269658B2 (en) 2012-06-29 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit devices with well regions and methods for forming the same
DE102015105632B4 (de) * 2015-04-14 2016-09-01 Infineon Technologies Ag Halbleitervorrichtung mit einem transistor
US9711644B2 (en) * 2015-09-14 2017-07-18 Globalfoundries Inc. Methods of making source/drain regions positioned inside U-shaped semiconductor material using source/drain placeholder structures
US10020395B2 (en) 2015-09-14 2018-07-10 Globalfoundries Inc. Semiconductor device with gate inside U-shaped channel and methods of making such a device
DE102016106872A1 (de) * 2016-04-13 2017-10-19 Infineon Technologies Ag Verfahren zum herstellen einer integrierten schaltung einschliesslich eines lateralen graben-transistors und eines logikschaltungselements
US11444207B2 (en) * 2018-12-12 2022-09-13 International Business Machines Corporation Lithium drifted thin film transistors for neuromorphic computing
JP7528664B2 (ja) * 2020-09-15 2024-08-06 住友電気工業株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
JPS59107569A (ja) 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
US4835584A (en) 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
CN1019720B (zh) * 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
BE1007283A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen.
US6097063A (en) * 1996-01-22 2000-08-01 Fuji Electric Co., Ltd. Semiconductor device having a plurality of parallel drift regions
WO1997029518A1 (de) 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
US6168983B1 (en) * 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
JP3405681B2 (ja) * 1997-07-31 2003-05-12 株式会社東芝 半導体装置
GB9826291D0 (en) * 1998-12-02 1999-01-20 Koninkl Philips Electronics Nv Field-effect semi-conductor devices

Also Published As

Publication number Publication date
DE60121331D1 (de) 2006-08-17
WO2001091189A1 (en) 2001-11-29
US6559502B2 (en) 2003-05-06
US20010045578A1 (en) 2001-11-29
GB0012137D0 (en) 2000-07-12
EP1295342A1 (de) 2003-03-26
JP2003534665A (ja) 2003-11-18
DE60121331T2 (de) 2007-08-02
EP1295342B1 (de) 2006-07-05

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