ATE534145T1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
ATE534145T1
ATE534145T1 AT01938146T AT01938146T ATE534145T1 AT E534145 T1 ATE534145 T1 AT E534145T1 AT 01938146 T AT01938146 T AT 01938146T AT 01938146 T AT01938146 T AT 01938146T AT E534145 T1 ATE534145 T1 AT E534145T1
Authority
AT
Austria
Prior art keywords
trench
region
drain
drain drift
extending
Prior art date
Application number
AT01938146T
Other languages
English (en)
Inventor
Raymond Hueting
Erwin Hijzen
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE534145T1 publication Critical patent/ATE534145T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
AT01938146T 2000-05-20 2001-05-01 Halbleiterbauelement ATE534145T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0012138.4A GB0012138D0 (en) 2000-05-20 2000-05-20 A semiconductor device
PCT/EP2001/004932 WO2001091190A1 (en) 2000-05-20 2001-05-01 A semiconductor device

Publications (1)

Publication Number Publication Date
ATE534145T1 true ATE534145T1 (de) 2011-12-15

Family

ID=9891934

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01938146T ATE534145T1 (de) 2000-05-20 2001-05-01 Halbleiterbauelement

Country Status (6)

Country Link
US (1) US6534823B2 (de)
EP (1) EP1290735B1 (de)
JP (1) JP2003534666A (de)
AT (1) ATE534145T1 (de)
GB (1) GB0012138D0 (de)
WO (1) WO2001091190A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555873B2 (en) * 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
DE10262418B3 (de) * 2002-02-21 2015-10-08 Infineon Technologies Ag MOS-Transistoreinrichtung
DE10324754B4 (de) 2003-05-30 2018-11-08 Infineon Technologies Ag Halbleiterbauelement
GB0314392D0 (en) * 2003-06-20 2003-07-23 Koninkl Philips Electronics Nv Trench mos structure
WO2005065144A2 (en) * 2003-12-19 2005-07-21 Third Dimension (3D) Semiconductor, Inc. Planarization method of manufacturing a superjunction device
DE102004041198B4 (de) * 2004-08-25 2016-06-09 Infineon Technologies Austria Ag Laterales Halbleiterbauelement mit einer Feldelektrode und einer Entladestruktur
DE102004064308B3 (de) 2004-08-25 2018-10-31 Infineon Technologies Austria Ag Laterale Halbleiterdiode mit einer Feldelektrode und einer Eckstruktur
DE102004047772B4 (de) * 2004-09-30 2018-12-13 Infineon Technologies Ag Lateraler Halbleitertransistor
US7473966B1 (en) * 2004-11-09 2009-01-06 Blanchard Richard A Oxide-bypassed lateral high voltage structures and methods
US7560359B2 (en) * 2004-11-26 2009-07-14 Samsung Electronics Co., Ltd. Methods of forming asymmetric recesses and gate structures that fill such recesses and related methods of forming semiconductor devices that include such recesses and gate structures
US8183113B2 (en) * 2005-08-24 2012-05-22 Samsung Electronics Co., Ltd. Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures
US7804150B2 (en) * 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
US20100213517A1 (en) * 2007-10-19 2010-08-26 Nxp B.V. High voltage semiconductor device
JP5280056B2 (ja) * 2008-01-10 2013-09-04 シャープ株式会社 Ｍｏｓ電界効果トランジスタ
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
JP5656608B2 (ja) * 2010-12-17 2015-01-21 三菱電機株式会社 半導体装置
JP6084357B2 (ja) * 2011-11-02 2017-02-22 ルネサスエレクトロニクス株式会社 半導体装置
US9799762B2 (en) 2012-12-03 2017-10-24 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
EP3024018B1 (de) * 2013-07-19 2018-08-08 Nissan Motor Co., Ltd Halbleiterbauelement
US9287404B2 (en) 2013-10-02 2016-03-15 Infineon Technologies Austria Ag Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates
US9306058B2 (en) * 2013-10-02 2016-04-05 Infineon Technologies Ag Integrated circuit and method of manufacturing an integrated circuit
US9401399B2 (en) * 2013-10-15 2016-07-26 Infineon Technologies Ag Semiconductor device
US9496339B2 (en) * 2014-06-02 2016-11-15 Infineon Technologies Austria Ag Semiconductor device comprising trench structures
DE102015105632B4 (de) * 2015-04-14 2016-09-01 Infineon Technologies Ag Halbleitervorrichtung mit einem transistor
DE102016113393B4 (de) * 2016-07-20 2024-11-21 Infineon Technologies Ag Halbleitervorrichtung, die ein transistor-array und ein abschlussgebiet enthält, halbleitervorrichtung mit einem leistungstransistor in einem halbleitersubstrat und verfahren zum herstellen solch einer halbleitervorrichtung
TWI777225B (zh) * 2019-08-29 2022-09-11 台灣積體電路製造股份有限公司 積體晶片及其形成方法
CN111244160B (zh) * 2020-01-17 2022-11-01 中国科学院微电子研究所 一种具有环形沟道区的mos器件及其制备方法
CN117276329A (zh) * 2023-11-20 2023-12-22 深圳天狼芯半导体有限公司 一种具有沟槽栅的ldmos及制备方法

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US4243997A (en) * 1976-03-25 1981-01-06 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
JPS61226966A (ja) * 1985-03-30 1986-10-08 Toshiba Corp 半導体装置
US4835584A (en) 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
US5040034A (en) * 1989-01-18 1991-08-13 Nissan Motor Co., Ltd. Semiconductor device
US5640034A (en) 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
US5434435A (en) * 1994-05-04 1995-07-18 North Carolina State University Trench gate lateral MOSFET
WO1999043029A1 (de) * 1998-02-20 1999-08-26 Infineon Technologies Ag Graben-gate-mos-transistor, dessen verwendung in einer eeprom-anordnung und verfahren zu dessen herstellung
JP3641547B2 (ja) * 1998-03-25 2005-04-20 株式会社豊田中央研究所 横型ｍｏｓ素子を含む半導体装置
GB9906247D0 (en) * 1999-03-18 1999-05-12 Koninkl Philips Electronics Nv An electronic device comprising a trench gate field effect device

Also Published As

Publication number Publication date
WO2001091190A1 (en) 2001-11-29
US6534823B2 (en) 2003-03-18
JP2003534666A (ja) 2003-11-18
EP1290735B1 (de) 2011-11-16
US20010045599A1 (en) 2001-11-29
GB0012138D0 (en) 2000-07-12
EP1290735A1 (de) 2003-03-12

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