ATE335285T1 - Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür - Google Patents

Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür

Info

Publication number
ATE335285T1
ATE335285T1 AT02705296T AT02705296T ATE335285T1 AT E335285 T1 ATE335285 T1 AT E335285T1 AT 02705296 T AT02705296 T AT 02705296T AT 02705296 T AT02705296 T AT 02705296T AT E335285 T1 ATE335285 T1 AT E335285T1
Authority
AT
Austria
Prior art keywords
cleaning
reaction chamber
cleaning gas
plasma
converted
Prior art date
Application number
AT02705296T
Other languages
English (en)
Inventor
Koji Shibata
Naoto Tsuji
Hitoshi Murata
Etsuo Wani
Yoshihide Kosano
Original Assignee
Canon Anelva Corp
Ulvac Inc
Kanto Denka Kogyo Kk
Sanyo Electric Co
Sony Corp
Daikin Ind Ltd
Tokyo Electron Ltd
Nec Electronics Corp
Hitachi Int Electric Inc
Matsushita Electric Industrial Co Ltd
Mitsubishi Electric Corp
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Ulvac Inc, Kanto Denka Kogyo Kk, Sanyo Electric Co, Sony Corp, Daikin Ind Ltd, Tokyo Electron Ltd, Nec Electronics Corp, Hitachi Int Electric Inc, Matsushita Electric Industrial Co Ltd, Mitsubishi Electric Corp, Renesas Tech Corp filed Critical Canon Anelva Corp
Application granted granted Critical
Publication of ATE335285T1 publication Critical patent/ATE335285T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT02705296T 2001-03-22 2002-03-18 Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür ATE335285T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001082840A JP2002280376A (ja) 2001-03-22 2001-03-22 Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Publications (1)

Publication Number Publication Date
ATE335285T1 true ATE335285T1 (de) 2006-08-15

Family

ID=18938735

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02705296T ATE335285T1 (de) 2001-03-22 2002-03-18 Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür

Country Status (8)

Country Link
US (1) US6935351B2 (de)
EP (1) EP1304731B1 (de)
JP (1) JP2002280376A (de)
KR (1) KR100523069B1 (de)
AT (1) ATE335285T1 (de)
DE (1) DE60213536T2 (de)
TW (1) TW554418B (de)
WO (1) WO2002078073A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4112198B2 (ja) * 2000-09-11 2008-07-02 財団法人地球環境産業技術研究機構 クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法
JP2003197615A (ja) * 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
JP2003234299A (ja) * 2002-02-12 2003-08-22 Research Institute Of Innovative Technology For The Earth クリーニングガス及びエッチングガス
US6902629B2 (en) 2002-04-12 2005-06-07 Applied Materials, Inc. Method for cleaning a process chamber
CA2703164C (en) * 2002-04-16 2013-10-08 Tyco Healthcare Group Lp Surgical stapler and method
JP2004179426A (ja) * 2002-11-27 2004-06-24 Tokyo Electron Ltd 基板処理装置のクリーニング方法
US20040129223A1 (en) * 2002-12-24 2004-07-08 Park Jong Hyurk Apparatus and method for manufacturing silicon nanodot film for light emission
US6923189B2 (en) * 2003-01-16 2005-08-02 Applied Materials, Inc. Cleaning of CVD chambers using remote source with cxfyoz based chemistry
JP4320389B2 (ja) * 2003-02-28 2009-08-26 関東電化工業株式会社 Ｃｖｄチャンバーのクリーニング方法およびそれに用いるクリーニングガス
JP4264479B2 (ja) * 2003-03-14 2009-05-20 キヤノンアネルバ株式会社 Ｃｖｄ装置のクリーニング方法
JP4385086B2 (ja) * 2003-03-14 2009-12-16 パナソニック株式会社 Ｃｖｄ装置のクリーニング装置およびｃｖｄ装置のクリーニング方法
JP4374487B2 (ja) * 2003-06-06 2009-12-02 株式会社Ｓｅｎ イオン源装置およびそのクリーニング最適化方法
US20050014383A1 (en) * 2003-07-15 2005-01-20 Bing Ji Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
US20050258137A1 (en) * 2004-03-24 2005-11-24 Sawin Herbert H Remote chamber methods for removing surface deposits
EP1733071A2 (de) * 2004-03-24 2006-12-20 Massachusetts Institute of Technology Verfahren mit entfernt angeordneter kammer zur entferung von oberflächenablagerungen
US7581549B2 (en) * 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
US20060021633A1 (en) * 2004-07-27 2006-02-02 Applied Materials, Inc. Closed loop clean gas control
JP2006114780A (ja) * 2004-10-15 2006-04-27 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム
US20060144820A1 (en) * 2004-12-30 2006-07-06 Sawin Herbert H Remote chamber methods for removing surface deposits
US20060144819A1 (en) * 2004-12-30 2006-07-06 Sawin Herbert H Remote chamber methods for removing surface deposits
KR100712529B1 (ko) * 2005-09-02 2007-04-30 삼성전자주식회사 플라즈마 어플리케이터의 인시츄 세정 방법 및 그 세정방법을 채용한 플라즈마 어플리케이터
US20070107750A1 (en) * 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
US7862683B2 (en) * 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US20070207275A1 (en) * 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
JPWO2007116768A1 (ja) 2006-03-27 2009-08-20 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR100765128B1 (ko) 2006-05-30 2007-10-11 주식회사 아토 Ｃｖｄ 챔버의 세정 장치 및 방법
KR100819096B1 (ko) * 2006-11-21 2008-04-02 삼성전자주식회사 Ｐｅｏｘ공정을 진행하는 반도체 제조설비의 리모트 플라즈마를 이용한 세정방법
KR100855002B1 (ko) * 2007-05-23 2008-08-28 삼성전자주식회사 플라즈마 이온 주입시스템
JP4933979B2 (ja) * 2007-08-10 2012-05-16 株式会社アルバック 成膜装置のクリーニング方法
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
WO2010008102A1 (en) * 2008-07-14 2010-01-21 Ips Ltd. Cleaning method of apparatus for depositing carbon containing film
JP2011228546A (ja) * 2010-04-21 2011-11-10 Mitsubishi Electric Corp プラズマｃｖｄ装置およびそのクリーニング方法
US10109496B2 (en) * 2013-12-30 2018-10-23 The Chemours Company Fc, Llc Chamber cleaning and semiconductor etching gases
JP5941491B2 (ja) * 2014-03-26 2016-06-29 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにプログラム
KR101577782B1 (ko) * 2014-05-29 2015-12-16 참엔지니어링(주) 기판 처리장치 및 이의 세정방법
US20160032451A1 (en) * 2014-07-29 2016-02-04 Applied Materials, Inc. Remote plasma clean source feed between backing plate and diffuser
CN106373868B (zh) * 2016-10-10 2020-03-10 昆山龙腾光电股份有限公司 一种阵列基板的制造方法
JP2019033236A (ja) 2017-08-10 2019-02-28 株式会社日本製鋼所 原子層成長装置並びに原子層成長装置を使用した成膜方法および原子層成長装置のクリーニング方法
KR102088596B1 (ko) * 2018-07-09 2020-06-01 램 리써치 코포레이션 Rf 플라즈마 생성기 및 리모트 플라즈마 생성기에 공급하는 rf 신호 소스
US10751765B2 (en) * 2018-08-13 2020-08-25 Applied Materials, Inc. Remote plasma source cleaning nozzle for cleaning a gas distribution plate
KR20230088869A (ko) * 2020-10-23 2023-06-20 램 리써치 코포레이션 플라즈마 에칭 반응기 내로 증기 증착 프로세스의 통합
JP7706236B2 (ja) 2020-12-25 2025-07-11 東京エレクトロン株式会社 プラズマ処理装置
US11772137B2 (en) 2021-07-23 2023-10-03 Applied Materials, Inc. Reactive cleaning of substrate support
US20230307216A1 (en) * 2022-03-25 2023-09-28 Applied Materials, Inc. Enhanced chamber clean and recovery with dual flow path
CN115142127B (zh) * 2022-08-29 2022-11-18 一道新能源科技(泰州)有限公司 一种基于lpcvd的多晶硅成型炉

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3725358A1 (de) * 1987-07-30 1989-02-09 Telog Systems Gmbh Vorrichtung und verfahren zur oberflaechenbehandlung von materialien
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
JPH07335563A (ja) * 1994-06-10 1995-12-22 Mitsubishi Electric Corp プラズマｃｖｄ装置
EP0697467A1 (de) * 1994-07-21 1996-02-21 Applied Materials, Inc. Verfahren und Vorrichtung zur Reinigung einer Beschichtungskammer
US6071572A (en) * 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US5935340A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Method and apparatus for gettering fluorine from chamber material surfaces
US6274058B1 (en) * 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
JP2001020076A (ja) * 1999-07-06 2001-01-23 Hitachi Kokusai Electric Inc 反応室のクリーニング方法及び装置
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
KR100767762B1 (ko) * 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6835278B2 (en) * 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
JP2002057106A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置のクリーニング方法及び処理装置

Also Published As

Publication number Publication date
DE60213536D1 (de) 2006-09-14
US6935351B2 (en) 2005-08-30
KR100523069B1 (ko) 2005-10-24
EP1304731B1 (de) 2006-08-02
WO2002078073A1 (en) 2002-10-03
EP1304731A4 (de) 2003-07-30
DE60213536T2 (de) 2007-10-25
EP1304731A1 (de) 2003-04-23
JP2002280376A (ja) 2002-09-27
KR20030007668A (ko) 2003-01-23
TW554418B (en) 2003-09-21
US20030079757A1 (en) 2003-05-01

Similar Documents

Publication Publication Date Title
ATE335285T1 (de) Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür
DE60327513D1 (de) Verfahren zur modifizierung der oberfläche von festem material, oberflächenmodifiziertes festes material und vorrichtung zur modifizierung der oberfläche von festem material
DE60205719T2 (de) Verfahren zur katalytischen chemischen Gasphasenabscheidung von Siliziumnitrid.
WO2004033061A3 (en) Fluorine separation and generation device
ATE278817T1 (de) Verfahren und vorrichtung zur plasmabeschichtung von oberflächen
EP1542264A4 (de) Cvd-vorrichtung mit mitteln zum reinigen mit fluorgas und verfahren zur reinigung einer cvd-vorrichtung mit fluorgas
WO2004059707A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride film
ATE384916T1 (de) Vorrichtung zur thermischen behandlung von schadstoffe enthaltenden prozessabgasen
GB0406049D0 (en) Surface coatings
DE59914708D1 (de) Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
WO2005066386A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride layer
SG121818A1 (en) Lithographic apparatus and device manufacturing method
EP1420298A3 (de) Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
DE50013960D1 (de) Verfahren zur Herstellung von Acetylen und Synthesegas
TW200520052A (en) Exposure apparatus, exposure method, and device-producing method
TWI318242B (en) Thin film deposition apparatus and thin film deposition method
DE60031544D1 (de) Dlc-film, dlc-beschichteter plastikbehälter und verfahren und vorrichtung zur herstellung solcher behälter
ATE486026T1 (de) Ausgabevorrichtung für duft- oder körperpflegemittelfläschchen und verfahren zu deren zusammenbau
TW200636086A (en) Film formation apparatus and method of using the same
EA202190997A1 (ru) Устройство, генерирующее аэрозоль, и нагревательная камера для него
GEP20074215B (en) Novel method for the industrial synthesis of strontium ranelate and the hydrates thereof
ATE356623T1 (de) 5-ht3-rezeptorantagonisten und verwendungsverfahren
TW200604390A (en) Film formation apparatus and method of cleaning such a film formation apparatus
WO2004057653A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride layer
AU2003255483A1 (en) Process for the conversion of polysulfanes

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties