ATE335285T1 - Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür - Google Patents

Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür

Info

Publication number
ATE335285T1
ATE335285T1 AT02705296T AT02705296T ATE335285T1 AT E335285 T1 ATE335285 T1 AT E335285T1 AT 02705296 T AT02705296 T AT 02705296T AT 02705296 T AT02705296 T AT 02705296T AT E335285 T1 ATE335285 T1 AT E335285T1
Authority
AT
Austria
Prior art keywords
cleaning
reaction chamber
cleaning gas
plasma
converted
Prior art date
Application number
AT02705296T
Other languages
English (en)
Inventor
Koji Shibata
Naoto Tsuji
Hitoshi Murata
Etsuo Wani
Yoshihide Kosano
Original Assignee
Canon Anelva Corp
Ulvac Inc
Kanto Denka Kogyo Kk
Sanyo Electric Co
Sony Corp
Daikin Ind Ltd
Tokyo Electron Ltd
Nec Electronics Corp
Hitachi Int Electric Inc
Matsushita Electric Industrial Co Ltd
Mitsubishi Electric Corp
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Ulvac Inc, Kanto Denka Kogyo Kk, Sanyo Electric Co, Sony Corp, Daikin Ind Ltd, Tokyo Electron Ltd, Nec Electronics Corp, Hitachi Int Electric Inc, Matsushita Electric Industrial Co Ltd, Mitsubishi Electric Corp, Renesas Tech Corp filed Critical Canon Anelva Corp
Application granted granted Critical
Publication of ATE335285T1 publication Critical patent/ATE335285T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT02705296T 2001-03-22 2002-03-18 Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür ATE335285T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001082840A JP2002280376A (ja) 2001-03-22 2001-03-22 Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Publications (1)

Publication Number Publication Date
ATE335285T1 true ATE335285T1 (de) 2006-08-15

Family

ID=18938735

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02705296T ATE335285T1 (de) 2001-03-22 2002-03-18 Verfahren zur reinigung von cvd-einrichtungen und reinigungsgerät dafür

Country Status (8)

Country Link
US (1) US6935351B2 (de)
EP (1) EP1304731B1 (de)
JP (1) JP2002280376A (de)
KR (1) KR100523069B1 (de)
AT (1) ATE335285T1 (de)
DE (1) DE60213536T2 (de)
TW (1) TW554418B (de)
WO (1) WO2002078073A1 (de)

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JP4264479B2 (ja) * 2003-03-14 2009-05-20 キヤノンアネルバ株式会社 Ｃｖｄ装置のクリーニング方法
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US20070107750A1 (en) * 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
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US8679989B2 (en) 2006-03-27 2014-03-25 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion
KR100765128B1 (ko) 2006-05-30 2007-10-11 주식회사 아토 Ｃｖｄ 챔버의 세정 장치 및 방법
KR100819096B1 (ko) * 2006-11-21 2008-04-02 삼성전자주식회사 Ｐｅｏｘ공정을 진행하는 반도체 제조설비의 리모트 플라즈마를 이용한 세정방법
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JP4933979B2 (ja) * 2007-08-10 2012-05-16 株式会社アルバック 成膜装置のクリーニング方法
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US10109496B2 (en) * 2013-12-30 2018-10-23 The Chemours Company Fc, Llc Chamber cleaning and semiconductor etching gases
JP5941491B2 (ja) * 2014-03-26 2016-06-29 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにプログラム
KR101577782B1 (ko) * 2014-05-29 2015-12-16 참엔지니어링(주) 기판 처리장치 및 이의 세정방법
US20160032451A1 (en) * 2014-07-29 2016-02-04 Applied Materials, Inc. Remote plasma clean source feed between backing plate and diffuser
CN106373868B (zh) * 2016-10-10 2020-03-10 昆山龙腾光电股份有限公司 一种阵列基板的制造方法
JP2019033236A (ja) 2017-08-10 2019-02-28 株式会社日本製鋼所 原子層成長装置並びに原子層成長装置を使用した成膜方法および原子層成長装置のクリーニング方法
WO2020014113A1 (en) * 2018-07-09 2020-01-16 Lam Research Corporation Radio frequency (rf) signal source supplying rf plasma generator and remote plasma generator
US10751765B2 (en) * 2018-08-13 2020-08-25 Applied Materials, Inc. Remote plasma source cleaning nozzle for cleaning a gas distribution plate
JP2023547315A (ja) * 2020-10-23 2023-11-10 ラム リサーチ コーポレーション プラズマエッチングリアクタ内への気相堆積プロセスの統合
JP7706236B2 (ja) 2020-12-25 2025-07-11 東京エレクトロン株式会社 プラズマ処理装置
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CN115142127B (zh) * 2022-08-29 2022-11-18 一道新能源科技(泰州)有限公司 一种基于lpcvd的多晶硅成型炉

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Also Published As

Publication number Publication date
US20030079757A1 (en) 2003-05-01
KR100523069B1 (ko) 2005-10-24
EP1304731B1 (de) 2006-08-02
JP2002280376A (ja) 2002-09-27
US6935351B2 (en) 2005-08-30
EP1304731A4 (de) 2003-07-30
DE60213536D1 (de) 2006-09-14
EP1304731A1 (de) 2003-04-23
TW554418B (en) 2003-09-21
KR20030007668A (ko) 2003-01-23
WO2002078073A1 (en) 2002-10-03
DE60213536T2 (de) 2007-10-25

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Legal Events

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