ATE336068T1 - Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers - Google Patents

Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers

Info

Publication number
ATE336068T1
ATE336068T1 AT02806193T AT02806193T ATE336068T1 AT E336068 T1 ATE336068 T1 AT E336068T1 AT 02806193 T AT02806193 T AT 02806193T AT 02806193 T AT02806193 T AT 02806193T AT E336068 T1 ATE336068 T1 AT E336068T1
Authority
AT
Austria
Prior art keywords
phase change
programming
change memory
mlc
briefly
Prior art date
Application number
AT02806193T
Other languages
English (en)
Inventor
Tyler Lowrey
Manzur Gill
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE336068T1 publication Critical patent/ATE336068T1/de

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Circuits Of Receivers In General (AREA)
  • Logic Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
AT02806193T 2001-12-28 2002-12-20 Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers ATE336068T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/034,146 US6625054B2 (en) 2001-12-28 2001-12-28 Method and apparatus to program a phase change memory

Publications (1)

Publication Number Publication Date
ATE336068T1 true ATE336068T1 (de) 2006-09-15

Family

ID=21874593

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02806193T ATE336068T1 (de) 2001-12-28 2002-12-20 Verfahren und vorrichtung zur programmierung eines phasenänderungsspeichers

Country Status (9)

Country Link
US (1) US6625054B2 (de)
EP (1) EP1468421B1 (de)
KR (1) KR100705867B1 (de)
CN (1) CN100449642C (de)
AT (1) ATE336068T1 (de)
AU (1) AU2002367356A1 (de)
DE (1) DE60213875T2 (de)
TW (1) TWI260016B (de)
WO (1) WO2003058633A1 (de)

Families Citing this family (162)

* Cited by examiner, † Cited by third party
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US20030123277A1 (en) 2003-07-03
CN100449642C (zh) 2009-01-07
EP1468421A1 (de) 2004-10-20
WO2003058633A1 (en) 2003-07-17
DE60213875D1 (de) 2006-09-21
AU2002367356A1 (en) 2003-07-24
US6625054B2 (en) 2003-09-23
TWI260016B (en) 2006-08-11
EP1468421B1 (de) 2006-08-09

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