ATE336070T1 - Programmierverfahren für eine halbleiterspeicherzelle - Google Patents

Programmierverfahren für eine halbleiterspeicherzelle

Info

Publication number
ATE336070T1
ATE336070T1 AT01305252T AT01305252T ATE336070T1 AT E336070 T1 ATE336070 T1 AT E336070T1 AT 01305252 T AT01305252 T AT 01305252T AT 01305252 T AT01305252 T AT 01305252T AT E336070 T1 ATE336070 T1 AT E336070T1
Authority
AT
Austria
Prior art keywords
programmed
cells
programming
verify
memory cell
Prior art date
Application number
AT01305252T
Other languages
German (de)
English (en)
Inventor
Zeev Cohen
Boaz Eitan
Eduardo Maayan
Original Assignee
Saifun Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saifun Semiconductors Ltd filed Critical Saifun Semiconductors Ltd
Application granted granted Critical
Publication of ATE336070T1 publication Critical patent/ATE336070T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • Read Only Memory (AREA)
AT01305252T 2000-06-29 2001-06-15 Programmierverfahren für eine halbleiterspeicherzelle ATE336070T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/606,205 US6292394B1 (en) 2000-06-29 2000-06-29 Method for programming of a semiconductor memory cell

Publications (1)

Publication Number Publication Date
ATE336070T1 true ATE336070T1 (de) 2006-09-15

Family

ID=24427007

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01305252T ATE336070T1 (de) 2000-06-29 2001-06-15 Programmierverfahren für eine halbleiterspeicherzelle

Country Status (5)

Country Link
US (1) US6292394B1 (fr)
EP (1) EP1168363B1 (fr)
JP (1) JP2002025284A (fr)
AT (1) ATE336070T1 (fr)
DE (1) DE60122059T2 (fr)

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Also Published As

Publication number Publication date
EP1168363A2 (fr) 2002-01-02
DE60122059D1 (de) 2006-09-21
EP1168363A3 (fr) 2004-05-19
JP2002025284A (ja) 2002-01-25
DE60122059T2 (de) 2007-03-08
US6292394B1 (en) 2001-09-18
EP1168363B1 (fr) 2006-08-09

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