ATE336078T1 - Fotoelektrische sensoranordnung und herstellungsverfahren dafür - Google Patents

Fotoelektrische sensoranordnung und herstellungsverfahren dafür

Info

Publication number
ATE336078T1
ATE336078T1 AT03104193T AT03104193T ATE336078T1 AT E336078 T1 ATE336078 T1 AT E336078T1 AT 03104193 T AT03104193 T AT 03104193T AT 03104193 T AT03104193 T AT 03104193T AT E336078 T1 ATE336078 T1 AT E336078T1
Authority
AT
Austria
Prior art keywords
layer
depositing
insulator
pads
substrate
Prior art date
Application number
AT03104193T
Other languages
English (en)
Inventor
Norbert Moussy
Cyril Guedj
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE336078T1 publication Critical patent/ATE336078T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Basic Packing Technique (AREA)
  • Facsimile Heads (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
AT03104193T 2002-11-29 2003-11-14 Fotoelektrische sensoranordnung und herstellungsverfahren dafür ATE336078T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0215023A FR2848027B1 (fr) 2002-11-29 2002-11-29 Dispositif de detection photo-electrique et procede pour sa realisation

Publications (1)

Publication Number Publication Date
ATE336078T1 true ATE336078T1 (de) 2006-09-15

Family

ID=32309832

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03104193T ATE336078T1 (de) 2002-11-29 2003-11-14 Fotoelektrische sensoranordnung und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US7049673B2 (de)
EP (1) EP1434270B1 (de)
JP (1) JP4629328B2 (de)
AT (1) ATE336078T1 (de)
DE (1) DE60307408T2 (de)
FR (1) FR2848027B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100837556B1 (ko) * 2007-03-19 2008-06-12 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
CN102017147B (zh) 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、系统和方法
US8525287B2 (en) 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
KR100877293B1 (ko) * 2007-08-31 2009-01-07 주식회사 동부하이텍 이미지 센서 및 그 제조방법
KR100920542B1 (ko) * 2007-12-24 2009-10-08 주식회사 동부하이텍 이미지 센서 및 그 제조방법
US8203195B2 (en) 2008-04-18 2012-06-19 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
FR2944140B1 (fr) 2009-04-02 2011-09-16 Commissariat Energie Atomique Dispositif de detection d'image electronique
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
CN113188655A (zh) * 2021-04-09 2021-07-30 广州市艾佛光通科技有限公司 基于体声波的光传感器及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0517208A1 (de) * 1991-06-05 1992-12-09 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Halbleitervorrichtung und deren Herstellungsprozess
JPH0883895A (ja) * 1994-09-14 1996-03-26 Toshiba Corp 固体撮像素子
US6448579B1 (en) * 2000-12-06 2002-09-10 L.G.Philips Lcd Co., Ltd. Thin film transistor array substrate for liquid crystal display and a method for fabricating the same
US6396118B1 (en) * 2000-02-03 2002-05-28 Agilent Technologies, Inc. Conductive mesh bias connection for an array of elevated active pixel sensors
US20040113220A1 (en) * 2000-12-21 2004-06-17 Peter Rieve Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrent
US6759262B2 (en) * 2001-12-18 2004-07-06 Agilent Technologies, Inc. Image sensor with pixel isolation system and manufacturing method therefor
US6798033B2 (en) * 2002-08-27 2004-09-28 E-Phocus, Inc. Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure

Also Published As

Publication number Publication date
US7049673B2 (en) 2006-05-23
DE60307408T2 (de) 2006-12-07
US20040108517A1 (en) 2004-06-10
EP1434270A1 (de) 2004-06-30
JP4629328B2 (ja) 2011-02-09
EP1434270B1 (de) 2006-08-09
DE60307408D1 (de) 2006-09-21
FR2848027B1 (fr) 2006-02-10
JP2004186686A (ja) 2004-07-02
FR2848027A1 (fr) 2004-06-04

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