ATE336140T1 - Schaltung für bildsensoren mit lawinenphotodioden - Google Patents

Schaltung für bildsensoren mit lawinenphotodioden

Info

Publication number
ATE336140T1
ATE336140T1 AT03782345T AT03782345T ATE336140T1 AT E336140 T1 ATE336140 T1 AT E336140T1 AT 03782345 T AT03782345 T AT 03782345T AT 03782345 T AT03782345 T AT 03782345T AT E336140 T1 ATE336140 T1 AT E336140T1
Authority
AT
Austria
Prior art keywords
image sensors
avalanche
photodiods
circuit
diodes
Prior art date
Application number
AT03782345T
Other languages
English (en)
Inventor
Carlos J R P Augusto
Pedro N C Diniz
Original Assignee
Quantum Semiconductor Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Semiconductor Llc filed Critical Quantum Semiconductor Llc
Application granted granted Critical
Publication of ATE336140T1 publication Critical patent/ATE336140T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
AT03782345T 2002-12-09 2003-12-09 Schaltung für bildsensoren mit lawinenphotodioden ATE336140T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43169102P 2002-12-09 2002-12-09

Publications (1)

Publication Number Publication Date
ATE336140T1 true ATE336140T1 (de) 2006-09-15

Family

ID=32507778

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03782345T ATE336140T1 (de) 2002-12-09 2003-12-09 Schaltung für bildsensoren mit lawinenphotodioden

Country Status (6)

Country Link
US (1) US7115963B2 (de)
EP (1) EP1570645B1 (de)
AT (1) ATE336140T1 (de)
AU (1) AU2003289994A1 (de)
DE (1) DE60307511T2 (de)
WO (1) WO2004054235A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050169646A1 (en) * 2004-01-30 2005-08-04 Massachusetts Institute Of Technology Lincoln distributed optical receiver array
JP5623700B2 (ja) * 2005-04-22 2014-11-12 コーニンクレッカ フィリップス エヌ ヴェ 飛行時間能力を有するｐｅｔ／ｍｒｉスキャナ
WO2006111883A2 (en) 2005-04-22 2006-10-26 Koninklijke Philips Electronics, N.V. Digital silicon photomultiplier for tof-pet
GB2426576A (en) * 2005-05-27 2006-11-29 Sensl Technologies Ltd Light sensor module comprising a plurality of elements in a close-tiled arrangement
EP2176685A2 (de) * 2007-08-08 2010-04-21 Koninklijke Philips Electronics N.V. Ableseschaltkreis für einen silicium-bildvervielfacher
US8319186B2 (en) 2007-08-08 2012-11-27 Koninklijke Philips Electronics N.V. Silicon photomultiplier trigger network
GB2451678A (en) * 2007-08-10 2009-02-11 Sensl Technologies Ltd Silicon photomultiplier circuitry for minimal onset and recovery times
US8426797B2 (en) * 2010-03-23 2013-04-23 Massachusetts Institute Of Technology CMOS readout architecture and method for photon-counting arrays
US8716643B2 (en) * 2010-09-06 2014-05-06 King Abdulaziz City Science And Technology Single photon counting image sensor and method
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
TWI526706B (zh) 2011-10-05 2016-03-21 原相科技股份有限公司 影像系統
US8680474B2 (en) * 2012-03-02 2014-03-25 Luxen Technologies, Inc. Parallel readout integrated circuit architecture for X-ray image sensor
US9036065B1 (en) * 2012-08-16 2015-05-19 Rambus Inc. Shared-counter image sensor
US10012534B2 (en) 2014-07-02 2018-07-03 The Johns Hopkins University Photodetection circuit having at least one counter operative in response to a mode switching circuit and operating method thereof
WO2016183091A1 (en) 2015-05-11 2016-11-17 Quantum Semiconductor Llc Pixel for use with light having wide intensity range
EP3448018A4 (de) * 2016-04-21 2019-06-12 Panasonic Intellectual Property Management Co., Ltd. Bildgebungsvorrichtung und damit ausgestattetes kamerasystem
JP2019075440A (ja) * 2017-10-13 2019-05-16 キヤノン株式会社 光検出装置、撮像装置、及び撮像システム
JP7089390B2 (ja) 2018-03-30 2022-06-22 キヤノン株式会社 光電変換装置及びその駆動方法
JP7193926B2 (ja) * 2018-04-23 2022-12-21 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
JP2020010150A (ja) * 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像システム
US12470849B2 (en) * 2022-12-15 2025-11-11 Prophesee Event sensor pixel with sensitivity and dynamic range optimization

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ227950A (en) * 1988-02-12 1990-11-27 Univ Connecticut Method of determining ligate (substance indicative of disease) concentration in a fluid using ligand-bound magnetic particles and measuring the magnetic particle-ligand-ligate complex aggregates
JPH098744A (ja) 1995-06-19 1997-01-10 Canon Inc アバランシェ・フォトダイオードのバイアス方式
JPH1155194A (ja) * 1997-07-29 1999-02-26 Fujitsu Denso Ltd 光受信器のバイアス制御方式
JP2000171295A (ja) * 1998-12-03 2000-06-23 Nec Corp Ａｐｄバイアス回路
GB2367945B (en) * 2000-08-16 2004-10-20 Secr Defence Photodetector circuit

Also Published As

Publication number Publication date
EP1570645B1 (de) 2006-08-09
WO2004054235A1 (en) 2004-06-24
DE60307511D1 (de) 2006-09-21
DE60307511T2 (de) 2007-04-05
US7115963B2 (en) 2006-10-03
US20050224903A1 (en) 2005-10-13
EP1570645A1 (de) 2005-09-07
AU2003289994A1 (en) 2004-06-30

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Legal Events

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