ATE346379T1 - Verfahren zur behandlung der oberfläche von halbleitenden substraten - Google Patents
Verfahren zur behandlung der oberfläche von halbleitenden substratenInfo
- Publication number
- ATE346379T1 ATE346379T1 AT97305641T AT97305641T ATE346379T1 AT E346379 T1 ATE346379 T1 AT E346379T1 AT 97305641 T AT97305641 T AT 97305641T AT 97305641 T AT97305641 T AT 97305641T AT E346379 T1 ATE346379 T1 AT E346379T1
- Authority
- AT
- Austria
- Prior art keywords
- treating
- semiconducting substrates
- hydrocarbon
- substrate
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
- H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
- H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Drying Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- ing And Chemical Polishing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9616225.0A GB9616225D0 (en) | 1996-08-01 | 1996-08-01 | Method of surface treatment of semiconductor substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE346379T1 true ATE346379T1 (de) | 2006-12-15 |
Family
ID=10797892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT97305641T ATE346379T1 (de) | 1996-08-01 | 1997-07-28 | Verfahren zur behandlung der oberfläche von halbleitenden substraten |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6261962B1 (de) |
| EP (1) | EP0822584B1 (de) |
| JP (1) | JP4237281B2 (de) |
| AT (1) | ATE346379T1 (de) |
| DE (1) | DE69736969T2 (de) |
| GB (1) | GB9616225D0 (de) |
Families Citing this family (92)
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|---|---|---|---|---|
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| JP4475548B2 (ja) | 1998-03-20 | 2010-06-09 | サーフィス テクノロジー システムズ ピーエルシー | ミクロメカニカルデバイスを製造する方法と装置 |
| DE69942020D1 (de) | 1998-12-11 | 2010-04-01 | Surface Technology Systems Plc | Plasmabehandlungsgerät |
| ATE281000T1 (de) * | 1999-04-14 | 2004-11-15 | Surface Technology Systems Plc | Verfahren und gerät zur stabilisierung eines plasmas |
| JP4819267B2 (ja) * | 1999-08-17 | 2011-11-24 | 東京エレクトロン株式会社 | パルスプラズマ処理方法および装置 |
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| US6960305B2 (en) | 1999-10-26 | 2005-11-01 | Reflectivity, Inc | Methods for forming and releasing microelectromechanical structures |
| US6942811B2 (en) | 1999-10-26 | 2005-09-13 | Reflectivity, Inc | Method for achieving improved selectivity in an etching process |
| US6949202B1 (en) | 1999-10-26 | 2005-09-27 | Reflectivity, Inc | Apparatus and method for flow of process gas in an ultra-clean environment |
| US7041224B2 (en) | 1999-10-26 | 2006-05-09 | Reflectivity, Inc. | Method for vapor phase etching of silicon |
| US7019376B2 (en) | 2000-08-11 | 2006-03-28 | Reflectivity, Inc | Micromirror array device with a small pitch size |
| US6451673B1 (en) * | 2001-02-15 | 2002-09-17 | Advanced Micro Devices, Inc. | Carrier gas modification for preservation of mask layer during plasma etching |
| US6812152B2 (en) * | 2001-08-09 | 2004-11-02 | Comlase Ab | Method to obtain contamination free laser mirrors and passivation of these |
| US7189332B2 (en) | 2001-09-17 | 2007-03-13 | Texas Instruments Incorporated | Apparatus and method for detecting an endpoint in a vapor phase etch |
| US7115516B2 (en) * | 2001-10-09 | 2006-10-03 | Applied Materials, Inc. | Method of depositing a material layer |
| US7027200B2 (en) | 2002-03-22 | 2006-04-11 | Reflectivity, Inc | Etching method used in fabrications of microstructures |
| US6965468B2 (en) | 2003-07-03 | 2005-11-15 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
| DE60218643D1 (de) * | 2002-06-28 | 2007-04-19 | St Microelectronics Srl | Herstellungsverfahren für Gräben mit schrägem Profil und gerundeten Oberkanten |
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| US7294580B2 (en) * | 2003-04-09 | 2007-11-13 | Lam Research Corporation | Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition |
| US7192531B1 (en) | 2003-06-24 | 2007-03-20 | Lam Research Corporation | In-situ plug fill |
| US6980347B2 (en) | 2003-07-03 | 2005-12-27 | Reflectivity, Inc | Micromirror having reduced space between hinge and mirror plate of the micromirror |
| DE10333995B4 (de) * | 2003-07-25 | 2018-10-25 | Robert Bosch Gmbh | Verfahren zum Ätzen eines Halbleitermaterials |
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| US7645704B2 (en) | 2003-09-17 | 2010-01-12 | Texas Instruments Incorporated | Methods and apparatus of etch process control in fabrications of microstructures |
| US7196017B2 (en) * | 2003-10-24 | 2007-03-27 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Method for etching smooth sidewalls in III-V based compounds for electro-optical devices |
| JP3882806B2 (ja) * | 2003-10-29 | 2007-02-21 | ソニー株式会社 | エッチング方法 |
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| JP2005150332A (ja) | 2003-11-14 | 2005-06-09 | Sony Corp | エッチング方法 |
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| US20060011578A1 (en) * | 2004-07-16 | 2006-01-19 | Lam Research Corporation | Low-k dielectric etch |
| JP4578887B2 (ja) * | 2004-08-11 | 2010-11-10 | 住友精密工業株式会社 | エッチング方法及びエッチング装置 |
| DE102004043357B4 (de) * | 2004-09-08 | 2015-10-22 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Sensorelements |
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| EP1804281B1 (de) * | 2005-12-28 | 2011-12-14 | STMicroelectronics Srl | Verfahren zum Ätzen eines tiefen Grabens in einem halbleitenden Gegenstand, und halbleitender Gegenstand so hergestellt. |
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| JP4643478B2 (ja) * | 2006-03-20 | 2011-03-02 | トーカロ株式会社 | 半導体加工装置用セラミック被覆部材の製造方法 |
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| US7309646B1 (en) * | 2006-10-10 | 2007-12-18 | Lam Research Corporation | De-fluoridation process |
| JP2008205436A (ja) * | 2007-01-26 | 2008-09-04 | Toshiba Corp | 微細構造体の製造方法 |
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| WO2008121158A1 (en) * | 2007-04-02 | 2008-10-09 | Inphase Technologies, Inc. | Non-ft plane angular filters |
| US9123509B2 (en) | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
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| JP5172417B2 (ja) * | 2008-03-27 | 2013-03-27 | Ｓｐｐテクノロジーズ株式会社 | シリコン構造体の製造方法及びその製造装置並びにその製造プログラム |
| CN102301458B (zh) * | 2009-01-31 | 2016-01-20 | 应用材料公司 | 用于蚀刻的方法和设备 |
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| US8609548B2 (en) | 2011-06-06 | 2013-12-17 | Lam Research Corporation | Method for providing high etch rate |
| US8440473B2 (en) | 2011-06-06 | 2013-05-14 | Lam Research Corporation | Use of spectrum to synchronize RF switching with gas switching during etch |
| JP5792613B2 (ja) * | 2011-12-28 | 2015-10-14 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
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| DE102013100035B4 (de) * | 2012-05-24 | 2019-10-24 | Universität Kassel | Ätzverfahren für III-V Halbleitermaterialien |
| JP6128972B2 (ja) * | 2013-06-06 | 2017-05-17 | キヤノン株式会社 | 液体吐出ヘッド用基板の製造方法 |
| US8883648B1 (en) * | 2013-09-09 | 2014-11-11 | United Microelectronics Corp. | Manufacturing method of semiconductor structure |
| US9401263B2 (en) * | 2013-09-19 | 2016-07-26 | Globalfoundries Inc. | Feature etching using varying supply of power pulses |
| CN103745945B (zh) * | 2013-11-15 | 2017-02-15 | 中微半导体设备(上海)有限公司 | 一种深硅通孔刻蚀装置及其刻蚀方法 |
| CN103730411B (zh) * | 2013-11-15 | 2017-01-25 | 中微半导体设备(上海)有限公司 | 一种深硅通孔刻蚀方法 |
| CN105679700B (zh) * | 2014-11-21 | 2019-08-23 | 北京北方华创微电子装备有限公司 | 硅深孔刻蚀方法 |
| JP2017079273A (ja) * | 2015-10-21 | 2017-04-27 | パナソニックＩｐマネジメント株式会社 | プラズマ処理方法 |
| KR20180134182A (ko) * | 2017-06-08 | 2018-12-18 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US10903109B2 (en) | 2017-12-29 | 2021-01-26 | Micron Technology, Inc. | Methods of forming high aspect ratio openings and methods of forming high aspect ratio features |
| KR102904251B1 (ko) * | 2019-02-18 | 2025-12-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| JP7450455B2 (ja) * | 2020-05-13 | 2024-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US12266534B2 (en) * | 2020-06-15 | 2025-04-01 | Tokyo Electron Limited | Forming a semiconductor device using a protective layer |
| GB2629555A (en) | 2023-01-25 | 2024-11-06 | Memsstar Ltd | Method of manufacturing a microstructure |
| CN120749016A (zh) * | 2025-06-17 | 2025-10-03 | 北京集成电路装备创新中心有限公司 | 深硅刻蚀方法及半导体工艺设备 |
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-
1996
- 1996-08-01 GB GBGB9616225.0A patent/GB9616225D0/en active Pending
-
1997
- 1997-07-28 DE DE69736969T patent/DE69736969T2/de not_active Expired - Lifetime
- 1997-07-28 AT AT97305641T patent/ATE346379T1/de not_active IP Right Cessation
- 1997-07-28 EP EP97305641A patent/EP0822584B1/de not_active Expired - Lifetime
- 1997-07-31 JP JP20667397A patent/JP4237281B2/ja not_active Expired - Lifetime
- 1997-08-01 US US08/904,954 patent/US6261962B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0822584A3 (de) | 1998-05-13 |
| EP0822584B1 (de) | 2006-11-22 |
| US6261962B1 (en) | 2001-07-17 |
| EP0822584A2 (de) | 1998-02-04 |
| DE69736969T2 (de) | 2007-10-18 |
| GB9616225D0 (en) | 1996-09-11 |
| JP4237281B2 (ja) | 2009-03-11 |
| JPH10144654A (ja) | 1998-05-29 |
| DE69736969D1 (de) | 2007-01-04 |
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