ATE349725T1 - Chemisch verstärkte negativphotoresistzusammensetzung - Google Patents

Chemisch verstärkte negativphotoresistzusammensetzung

Info

Publication number
ATE349725T1
ATE349725T1 AT01934000T AT01934000T ATE349725T1 AT E349725 T1 ATE349725 T1 AT E349725T1 AT 01934000 T AT01934000 T AT 01934000T AT 01934000 T AT01934000 T AT 01934000T AT E349725 T1 ATE349725 T1 AT E349725T1
Authority
AT
Austria
Prior art keywords
exposure
radiation
photoresist composition
crosslinking
acid
Prior art date
Application number
AT01934000T
Other languages
English (en)
Inventor
Pingyong Xu
Ping-Hung Lu
Ralph R Dammel
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE349725T1 publication Critical patent/ATE349725T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT01934000T 2000-06-16 2001-05-22 Chemisch verstärkte negativphotoresistzusammensetzung ATE349725T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/596,098 US6576394B1 (en) 2000-06-16 2000-06-16 Negative-acting chemically amplified photoresist composition

Publications (1)

Publication Number Publication Date
ATE349725T1 true ATE349725T1 (de) 2007-01-15

Family

ID=24385975

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01934000T ATE349725T1 (de) 2000-06-16 2001-05-22 Chemisch verstärkte negativphotoresistzusammensetzung

Country Status (9)

Country Link
US (1) US6576394B1 (de)
EP (1) EP1297386B1 (de)
JP (1) JP4799800B2 (de)
KR (1) KR100790412B1 (de)
CN (1) CN1220915C (de)
AT (1) ATE349725T1 (de)
DE (1) DE60125539T2 (de)
TW (1) TW567403B (de)
WO (1) WO2001096960A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
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TWI242689B (en) * 2001-07-30 2005-11-01 Tokyo Ohka Kogyo Co Ltd Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
JP4213925B2 (ja) * 2002-08-19 2009-01-28 富士フイルム株式会社 ネガ型レジスト組成物
WO2005023952A1 (ja) * 2003-08-27 2005-03-17 Nok Corporation 加硫接着剤組成物
CN1947067B (zh) * 2004-04-23 2012-05-30 东京应化工业株式会社 光刻用冲洗液
JP2006008792A (ja) * 2004-06-24 2006-01-12 Tokyo Ohka Kogyo Co Ltd シート形成用組成物、シート形成用組成物の製造方法、および、ディスプレイパネル製造用シート状未焼成体
WO2006120845A1 (ja) * 2005-05-11 2006-11-16 Tokyo Ohka Kogyo Co., Ltd. ネガ型レジスト組成物およびレジストパターン形成方法
JP4823562B2 (ja) * 2005-05-11 2011-11-24 東京応化工業株式会社 レジストパターン形成方法
KR101298940B1 (ko) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
US8871422B2 (en) * 2005-09-22 2014-10-28 Hitachi Chemical Dupont Microsystems Ltd. Negative-type photosensitive resin composition, pattern forming method and electronic parts
JP4923656B2 (ja) * 2006-03-22 2012-04-25 日立化成デュポンマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品
US8298747B2 (en) * 2007-03-12 2012-10-30 Hitachi Chemical Dupont Microsystems, Ltd. Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
JP4637221B2 (ja) * 2007-09-28 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
WO2009057638A1 (ja) * 2007-10-29 2009-05-07 Hitachi Chemical Dupont Microsystems, Ltd. ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
US20130105440A1 (en) 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite negative photosensitive composition and use thereof
CN103309160B (zh) 2013-07-03 2015-08-26 北京科华微电子材料有限公司 一种负性化学放大光刻胶及其成像方法
WO2016054677A1 (en) * 2014-10-07 2016-04-14 Newsouth Innovations Pty Limited A method of patterning a layer
KR102537349B1 (ko) 2015-02-02 2023-05-26 바스프 에스이 잠재성 산 및 그의 용도
US20170176856A1 (en) 2015-12-21 2017-06-22 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working photoresist compositions for laser ablation and use thereof
SG11201908415XA (en) * 2017-04-25 2019-11-28 Merck Patent Gmbh Negative resist formulation for producing undercut pattern profiles
US20200326623A1 (en) * 2017-12-28 2020-10-15 Merck Patent Gmbh A negative tone lift off resist composition comprising an alkali soluble resin and cross linkers and a method for manufacturing metal film patterns on a substrate
KR102691177B1 (ko) 2018-01-25 2024-08-01 메르크 파텐트 게엠베하 포토레지스트 리무버 조성물
KR102448220B1 (ko) 2018-01-25 2022-09-27 메르크 파텐트 게엠베하 포토레지스트 제거제 조성물
EP3997521B1 (de) 2019-07-11 2023-08-30 Merck Patent GmbH Photolackentfernerzusammensetzungen
WO2022128844A1 (en) 2020-12-15 2022-06-23 Merck Patent Gmbh Photoresist remover compositions
KR20240095519A (ko) 2021-11-17 2024-06-25 메르크 파텐트 게엠베하 습식 화학 에칭에 의한 금속 구조 제작을 개선하기 위한 조성물 및 방법

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US4540598A (en) 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
JP2655370B2 (ja) * 1991-08-14 1997-09-17 富士写真フイルム株式会社 感光性組成物
EP0571330B1 (de) 1992-05-22 1999-04-07 Ciba SC Holding AG Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JPH06266101A (ja) * 1993-03-12 1994-09-22 Japan Synthetic Rubber Co Ltd ドライ現像用ポジ型レジスト組成物
DE69400595T2 (de) 1993-04-20 1997-04-30 Japan Synthetic Rubber Co., Ltd., Tokio/Tokyo Strahlungsempfindliche Harzzusammensetzung
JP3330254B2 (ja) 1995-04-19 2002-09-30 東京応化工業株式会社 ネガ型レジスト組成物
JP3456808B2 (ja) 1995-09-29 2003-10-14 東京応化工業株式会社 ホトレジスト組成物
EP0925529B1 (de) 1996-09-02 2003-04-16 Ciba SC Holding AG Alkylsulfonyloxime für i-line-photoresists hoher auflösung und empfindlichkeit
JP3053072B2 (ja) * 1996-09-10 2000-06-19 東京応化工業株式会社 レジスト積層体及びそれを用いたパターン形成方法
JP3515916B2 (ja) * 1998-11-02 2004-04-05 東京応化工業株式会社 ポジ型ホトレジスト組成物およびこれを用いた多層レジスト材料

Also Published As

Publication number Publication date
WO2001096960A1 (en) 2001-12-20
TW567403B (en) 2003-12-21
EP1297386B1 (de) 2006-12-27
EP1297386A1 (de) 2003-04-02
CN1220915C (zh) 2005-09-28
DE60125539D1 (de) 2007-02-08
KR100790412B1 (ko) 2008-01-02
CN1436324A (zh) 2003-08-13
US6576394B1 (en) 2003-06-10
KR20030076229A (ko) 2003-09-26
DE60125539T2 (de) 2007-10-04
JP2004503830A (ja) 2004-02-05
JP4799800B2 (ja) 2011-10-26

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