ATE349791T1 - Einmodiger hochleistungs-halbleiterlaser - Google Patents

Einmodiger hochleistungs-halbleiterlaser

Info

Publication number
ATE349791T1
ATE349791T1 AT01938970T AT01938970T ATE349791T1 AT E349791 T1 ATE349791 T1 AT E349791T1 AT 01938970 T AT01938970 T AT 01938970T AT 01938970 T AT01938970 T AT 01938970T AT E349791 T1 ATE349791 T1 AT E349791T1
Authority
AT
Austria
Prior art keywords
section
mode
semiconductor laser
high power
power semiconductor
Prior art date
Application number
AT01938970T
Other languages
English (en)
Inventor
Dimitri Z Garbuzov
Viktor B Khalfin
Original Assignee
Trumpf Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc filed Critical Trumpf Photonics Inc
Application granted granted Critical
Publication of ATE349791T1 publication Critical patent/ATE349791T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AT01938970T 2000-01-20 2001-01-19 Einmodiger hochleistungs-halbleiterlaser ATE349791T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17691300P 2000-01-20 2000-01-20
US09/585,032 US6600764B1 (en) 2000-01-20 2000-06-01 High power single mode semiconductor laser

Publications (1)

Publication Number Publication Date
ATE349791T1 true ATE349791T1 (de) 2007-01-15

Family

ID=26872743

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01938970T ATE349791T1 (de) 2000-01-20 2001-01-19 Einmodiger hochleistungs-halbleiterlaser

Country Status (6)

Country Link
US (1) US6600764B1 (de)
EP (1) EP1269588B1 (de)
AT (1) ATE349791T1 (de)
CA (1) CA2398827A1 (de)
DE (1) DE60125523T2 (de)
WO (1) WO2001057973A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7035508B2 (en) * 2003-04-18 2006-04-25 Metrophotonics Inc. Waveguide structure having improved reflective mirror features
DE602004024451D1 (de) * 2003-12-22 2010-01-14 Panasonic Corp Halbleiterlaser-bauelement und laserprojektor
JP2009033009A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 半導体レーザ装置及びその製造方法
US8615029B2 (en) * 2009-12-30 2013-12-24 Ipg Photonics Corporation Optical device
US8817950B2 (en) * 2011-12-22 2014-08-26 Moxtek, Inc. X-ray tube to power supply connector
DE102016115723A1 (de) 2016-08-24 2018-03-01 Forschungsverbund Berlin E.V. Wellenleiterstruktur und optisches System mit Wellenleiterstruktur
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
WO2022261511A1 (en) 2021-06-10 2022-12-15 Freedom Photonics Llc Designs for lateral current control in optical amplifiers and lasers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2695440B2 (ja) * 1988-07-07 1997-12-24 三菱電機株式会社 半導体レーザ装置
US5003550A (en) * 1990-03-09 1991-03-26 Spectra Diode Laboratories, Inc. Integrated laser-amplifier with steerable beam
US5539571A (en) * 1992-09-21 1996-07-23 Sdl, Inc. Differentially pumped optical amplifer and mopa device
JP3178565B2 (ja) * 1993-06-30 2001-06-18 日本電信電話株式会社 半導体光デバイス
US5608743A (en) * 1994-07-15 1997-03-04 Fuji Photo Film Co., Ltd. Semiconductor light emitting device
FR2730821B1 (fr) * 1995-02-22 1997-04-30 Alcatel Optronics Guide optique segmente pouvant notamment etre inclus dans un dispositif semiconducteur
US5878070A (en) * 1995-05-25 1999-03-02 Northwestern University Photonic wire microcavity light emitting devices
FR2737582B1 (fr) * 1995-08-04 1997-08-29 Alcatel Nv Composant opto-electronique integre
JP3140788B2 (ja) * 1995-12-28 2001-03-05 松下電器産業株式会社 半導体レーザ装置
JPH10145001A (ja) * 1996-11-13 1998-05-29 Sony Corp 半導体レーザー
US6014396A (en) * 1997-09-05 2000-01-11 Sdl, Inc. Flared semiconductor optoelectronic device
US6052397A (en) * 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam

Also Published As

Publication number Publication date
EP1269588B1 (de) 2006-12-27
DE60125523D1 (de) 2007-02-08
US6600764B1 (en) 2003-07-29
DE60125523T2 (de) 2007-10-04
EP1269588A1 (de) 2003-01-02
WO2001057973A1 (en) 2001-08-09
EP1269588A4 (de) 2005-09-21
CA2398827A1 (en) 2001-08-09

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