ATE280961T1 - Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter - Google Patents
Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiterInfo
- Publication number
- ATE280961T1 ATE280961T1 AT01916224T AT01916224T ATE280961T1 AT E280961 T1 ATE280961 T1 AT E280961T1 AT 01916224 T AT01916224 T AT 01916224T AT 01916224 T AT01916224 T AT 01916224T AT E280961 T1 ATE280961 T1 AT E280961T1
- Authority
- AT
- Austria
- Prior art keywords
- light emitting
- emitting diode
- high power
- multiple pass
- super light
- Prior art date
Links
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 238000013459 approach Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/042—Superluminescent diodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12119—Bend
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12123—Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18513300P | 2000-02-25 | 2000-02-25 | |
| PCT/US2001/006039 WO2001063331A1 (en) | 2000-02-25 | 2001-02-23 | Multi-pass, arcuate bent waveguide, high power superluminescent diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE280961T1 true ATE280961T1 (de) | 2004-11-15 |
Family
ID=22679738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01916224T ATE280961T1 (de) | 2000-02-25 | 2001-02-23 | Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6937780B2 (de) |
| EP (1) | EP1272878B1 (de) |
| AT (1) | ATE280961T1 (de) |
| CA (1) | CA2404451A1 (de) |
| DE (1) | DE60106742T2 (de) |
| WO (1) | WO2001063331A1 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7190852B2 (en) * | 2002-10-15 | 2007-03-13 | Covega Corporation | Semiconductor devices with curved waveguides and mode transformers |
| US7203409B2 (en) * | 2004-08-16 | 2007-04-10 | Covega Corporation | Superluminescent diodes having high output power and reduced internal reflections |
| WO2007040108A1 (ja) * | 2005-09-30 | 2007-04-12 | Anritsu Corporation | 半導体光素子および半導体光素子を搭載した外部共振レーザ |
| US7505496B2 (en) * | 2006-04-05 | 2009-03-17 | Ciena Corporation | Systems and methods for real-time compensation for non-linearity in optical sources for analog signal transmission |
| JP5311046B2 (ja) | 2009-09-11 | 2013-10-09 | セイコーエプソン株式会社 | プロジェクター |
| US8269977B2 (en) | 2010-05-26 | 2012-09-18 | Gerard A Alphonse | Discrete spectrum broadband optical source |
| US8259304B2 (en) | 2010-05-26 | 2012-09-04 | Gerard A Alphonse | Broadband discrete spectrum optical source |
| AU2012242849A1 (en) * | 2011-04-12 | 2013-10-31 | Afl Telecommunications Llc | Concentrator waveguide device |
| JP5958916B2 (ja) * | 2011-05-02 | 2016-08-02 | パナソニックIpマネジメント株式会社 | スーパールミネッセントダイオード |
| US9645311B2 (en) | 2013-05-21 | 2017-05-09 | International Business Machines Corporation | Optical component with angled-facet waveguide |
| WO2017110017A1 (ja) * | 2015-12-25 | 2017-06-29 | ソニー株式会社 | 発光素子および表示装置 |
| US11164990B2 (en) | 2016-06-13 | 2021-11-02 | Sony Corporation | Optical device and display apparatus |
| WO2022184868A1 (en) * | 2021-03-05 | 2022-09-09 | Rockley Photonics Limited | Waveguide facet interface |
| US11573422B2 (en) | 2021-06-07 | 2023-02-07 | Microsoft Technology Licensing, Llc | Near-eye display system having multiple pass in-coupling for waveguide display |
| CN113488832B (zh) * | 2021-06-29 | 2022-09-30 | 青岛海信宽带多媒体技术有限公司 | 一种具有调制器的激光器及光模块 |
| CN114005923B (zh) * | 2021-11-19 | 2025-02-14 | 长春理工大学 | 前端双窗口双光束小夹角输出超辐射发光二极管 |
| CN115776041A (zh) * | 2022-12-19 | 2023-03-10 | 上海交通大学 | 基于锥形波导增益的高功率硅基iii-v族外腔激光器 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682863B2 (ja) | 1987-12-02 | 1994-10-19 | 日本電信電話株式会社 | 発光ダイオード |
| US5793521A (en) * | 1992-09-21 | 1998-08-11 | Sdl Inc. | Differentially patterned pumped optical semiconductor gain media |
| US5321718A (en) * | 1993-01-28 | 1994-06-14 | Sdl, Inc. | Frequency converted laser diode and lens system therefor |
| GB9425729D0 (en) * | 1994-09-14 | 1995-02-22 | British Telecomm | Otical device |
| US5621749A (en) | 1995-09-06 | 1997-04-15 | Hewlett-Packard Company | Praseodymium-doped fluoride fiber upconversion laser for the generation of blue light |
| US5745284A (en) * | 1996-02-23 | 1998-04-28 | President And Fellows Of Harvard College | Solid-state laser source of tunable narrow-bandwidth ultraviolet radiation |
| US5912910A (en) * | 1996-05-17 | 1999-06-15 | Sdl, Inc. | High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices |
| CA2257156A1 (en) * | 1996-06-05 | 1997-12-11 | Sarnoff Corporation | Light emitting semiconductor device |
| JPH10200209A (ja) * | 1997-01-10 | 1998-07-31 | Nec Corp | 半導体光増幅素子 |
| US6091755A (en) * | 1997-11-21 | 2000-07-18 | Sdl, Inc. | Optically amplifying semiconductor diodes with curved waveguides for external cavities |
| US6339606B1 (en) | 1998-06-16 | 2002-01-15 | Princeton Lightwave, Inc. | High power semiconductor light source |
| US6430207B1 (en) * | 1998-09-23 | 2002-08-06 | Sarnoff Corporation | High-power laser with transverse mode filter |
| US6411757B1 (en) * | 2000-02-14 | 2002-06-25 | Agere Systems Guardian Corp. | Article comprising a waveguide structure with improved pump utilization |
-
2001
- 2001-02-23 AT AT01916224T patent/ATE280961T1/de not_active IP Right Cessation
- 2001-02-23 US US10/220,897 patent/US6937780B2/en not_active Expired - Fee Related
- 2001-02-23 WO PCT/US2001/006039 patent/WO2001063331A1/en not_active Ceased
- 2001-02-23 EP EP01916224A patent/EP1272878B1/de not_active Expired - Lifetime
- 2001-02-23 CA CA002404451A patent/CA2404451A1/en not_active Abandoned
- 2001-02-23 DE DE60106742T patent/DE60106742T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6937780B2 (en) | 2005-08-30 |
| CA2404451A1 (en) | 2001-08-30 |
| WO2001063331A1 (en) | 2001-08-30 |
| DE60106742D1 (de) | 2004-12-02 |
| EP1272878B1 (de) | 2004-10-27 |
| DE60106742T2 (de) | 2005-03-10 |
| EP1272878A1 (de) | 2003-01-08 |
| EP1272878A4 (de) | 2003-08-20 |
| US20040126063A1 (en) | 2004-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE280961T1 (de) | Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter | |
| ATE316701T1 (de) | Diodenlaserchip mit wellenleiter | |
| ATE290761T1 (de) | Lichtemittierende gegenstände mit lichtreflektierende stukturen | |
| MY137396A (en) | Group iii nitride based light emitting diode structures with a quantum well and superlattice, group iii nitride based quantum well structures and group iii nitride based superlattice structures | |
| EP1143584A3 (de) | Vielfachhalbleiterlaser | |
| AU3761295A (en) | Method for producing high efficiency light-emitting diodes and resulting diode structures | |
| EP1241752A3 (de) | Lichtquelle mit einer Vielzahl von Laserdiodenmodulen | |
| ATE282901T1 (de) | Verbesserungen im bezug auf halbleiterlaser | |
| EP1248303A4 (de) | Leuchtdiode | |
| CA2374495A1 (en) | Light-emitting module | |
| WO2003075425A1 (fr) | Element laser a semi-conducteur a base de nitrure | |
| EP0971252A3 (de) | Laser-Diode Modul | |
| EP1691458A4 (de) | Halbleiterlaser des typs mit externem resonator | |
| CA2412423A1 (en) | Improved transparent substrate light emitting diode | |
| WO2003094311A3 (de) | Optisch gepumpte halbleiterlaservorrichtung | |
| EP0948104A3 (de) | Halbleiterlaser-Modul und Herstellungsverfahren | |
| DE50113726D1 (de) | Leuchtdiodenanordnung mit reflektor | |
| EP0623980A3 (de) | Transversalemittierender Halbleiterlaser und Kopplung an einem Lichtwellenleiter. | |
| EP1037343A3 (de) | Halbleiterlaser mit verteilter Rückkoppelung | |
| EP1106905A3 (de) | Leuchte | |
| DE50007466D1 (de) | Längliche lichtquelle | |
| EP1796233A4 (de) | Halbleiter-laserelement und halbleiter-laserelement-gruppe | |
| ATE298941T1 (de) | Anbringung eines optischen bauelements an einem kühlkörper | |
| ATE349791T1 (de) | Einmodiger hochleistungs-halbleiterlaser | |
| FR2812769B1 (fr) | Laser accordable en semi-conducteur a emission par la tranche |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
Ref document number: 1272878 Country of ref document: EP |
|
| REN | Ceased due to non-payment of the annual fee |