ATE280961T1 - Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter - Google Patents

Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter

Info

Publication number
ATE280961T1
ATE280961T1 AT01916224T AT01916224T ATE280961T1 AT E280961 T1 ATE280961 T1 AT E280961T1 AT 01916224 T AT01916224 T AT 01916224T AT 01916224 T AT01916224 T AT 01916224T AT E280961 T1 ATE280961 T1 AT E280961T1
Authority
AT
Austria
Prior art keywords
light emitting
emitting diode
high power
multiple pass
super light
Prior art date
Application number
AT01916224T
Other languages
English (en)
Inventor
Gerard A Alphonse
Original Assignee
Trumpf Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc filed Critical Trumpf Photonics Inc
Application granted granted Critical
Publication of ATE280961T1 publication Critical patent/ATE280961T1/de

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/125Bends, branchings or intersections
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/1228Tapered waveguides, e.g. integrated spot-size transformers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042Superluminescent diodes
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12107Grating
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12119Bend
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12123Diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
AT01916224T 2000-02-25 2001-02-23 Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter ATE280961T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18513300P 2000-02-25 2000-02-25
PCT/US2001/006039 WO2001063331A1 (en) 2000-02-25 2001-02-23 Multi-pass, arcuate bent waveguide, high power superluminescent diode

Publications (1)

Publication Number Publication Date
ATE280961T1 true ATE280961T1 (de) 2004-11-15

Family

ID=22679738

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01916224T ATE280961T1 (de) 2000-02-25 2001-02-23 Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter

Country Status (6)

Country Link
US (1) US6937780B2 (de)
EP (1) EP1272878B1 (de)
AT (1) ATE280961T1 (de)
CA (1) CA2404451A1 (de)
DE (1) DE60106742T2 (de)
WO (1) WO2001063331A1 (de)

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US7190852B2 (en) * 2002-10-15 2007-03-13 Covega Corporation Semiconductor devices with curved waveguides and mode transformers
US7203409B2 (en) * 2004-08-16 2007-04-10 Covega Corporation Superluminescent diodes having high output power and reduced internal reflections
WO2007040108A1 (ja) * 2005-09-30 2007-04-12 Anritsu Corporation 半導体光素子および半導体光素子を搭載した外部共振レーザ
US7505496B2 (en) * 2006-04-05 2009-03-17 Ciena Corporation Systems and methods for real-time compensation for non-linearity in optical sources for analog signal transmission
JP5311046B2 (ja) 2009-09-11 2013-10-09 セイコーエプソン株式会社 プロジェクター
US8269977B2 (en) 2010-05-26 2012-09-18 Gerard A Alphonse Discrete spectrum broadband optical source
US8259304B2 (en) 2010-05-26 2012-09-04 Gerard A Alphonse Broadband discrete spectrum optical source
AU2012242849A1 (en) * 2011-04-12 2013-10-31 Afl Telecommunications Llc Concentrator waveguide device
JP5958916B2 (ja) * 2011-05-02 2016-08-02 パナソニックIpマネジメント株式会社 スーパールミネッセントダイオード
US9645311B2 (en) 2013-05-21 2017-05-09 International Business Machines Corporation Optical component with angled-facet waveguide
WO2017110017A1 (ja) * 2015-12-25 2017-06-29 ソニー株式会社 発光素子および表示装置
US11164990B2 (en) 2016-06-13 2021-11-02 Sony Corporation Optical device and display apparatus
WO2022184868A1 (en) * 2021-03-05 2022-09-09 Rockley Photonics Limited Waveguide facet interface
US11573422B2 (en) 2021-06-07 2023-02-07 Microsoft Technology Licensing, Llc Near-eye display system having multiple pass in-coupling for waveguide display
CN113488832B (zh) * 2021-06-29 2022-09-30 青岛海信宽带多媒体技术有限公司 一种具有调制器的激光器及光模块
CN114005923B (zh) * 2021-11-19 2025-02-14 长春理工大学 前端双窗口双光束小夹角输出超辐射发光二极管
CN115776041A (zh) * 2022-12-19 2023-03-10 上海交通大学 基于锥形波导增益的高功率硅基iii-v族外腔激光器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682863B2 (ja) 1987-12-02 1994-10-19 日本電信電話株式会社 発光ダイオード
US5793521A (en) * 1992-09-21 1998-08-11 Sdl Inc. Differentially patterned pumped optical semiconductor gain media
US5321718A (en) * 1993-01-28 1994-06-14 Sdl, Inc. Frequency converted laser diode and lens system therefor
GB9425729D0 (en) * 1994-09-14 1995-02-22 British Telecomm Otical device
US5621749A (en) 1995-09-06 1997-04-15 Hewlett-Packard Company Praseodymium-doped fluoride fiber upconversion laser for the generation of blue light
US5745284A (en) * 1996-02-23 1998-04-28 President And Fellows Of Harvard College Solid-state laser source of tunable narrow-bandwidth ultraviolet radiation
US5912910A (en) * 1996-05-17 1999-06-15 Sdl, Inc. High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices
CA2257156A1 (en) * 1996-06-05 1997-12-11 Sarnoff Corporation Light emitting semiconductor device
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US6091755A (en) * 1997-11-21 2000-07-18 Sdl, Inc. Optically amplifying semiconductor diodes with curved waveguides for external cavities
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US6430207B1 (en) * 1998-09-23 2002-08-06 Sarnoff Corporation High-power laser with transverse mode filter
US6411757B1 (en) * 2000-02-14 2002-06-25 Agere Systems Guardian Corp. Article comprising a waveguide structure with improved pump utilization

Also Published As

Publication number Publication date
US6937780B2 (en) 2005-08-30
CA2404451A1 (en) 2001-08-30
WO2001063331A1 (en) 2001-08-30
DE60106742D1 (de) 2004-12-02
EP1272878B1 (de) 2004-10-27
DE60106742T2 (de) 2005-03-10
EP1272878A1 (de) 2003-01-08
EP1272878A4 (de) 2003-08-20
US20040126063A1 (en) 2004-07-01

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