ATE353377T1 - Plattierungsverfahren, -vorrichtung und -system - Google Patents

Plattierungsverfahren, -vorrichtung und -system

Info

Publication number
ATE353377T1
ATE353377T1 AT00949906T AT00949906T ATE353377T1 AT E353377 T1 ATE353377 T1 AT E353377T1 AT 00949906 T AT00949906 T AT 00949906T AT 00949906 T AT00949906 T AT 00949906T AT E353377 T1 ATE353377 T1 AT E353377T1
Authority
AT
Austria
Prior art keywords
plating
plating method
supplied
electrode plate
electrode
Prior art date
Application number
AT00949906T
Other languages
English (en)
Inventor
Takayuki Niuya
Michihiro Ono
Hideto Goto
Kyungho Park
Yoshinori Marumo
Katsusuke Shimizu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE353377T1 publication Critical patent/ATE353377T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT00949906T 1999-07-26 2000-07-26 Plattierungsverfahren, -vorrichtung und -system ATE353377T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21019399 1999-07-26

Publications (1)

Publication Number Publication Date
ATE353377T1 true ATE353377T1 (de) 2007-02-15

Family

ID=16585334

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00949906T ATE353377T1 (de) 1999-07-26 2000-07-26 Plattierungsverfahren, -vorrichtung und -system

Country Status (7)

Country Link
US (1) US6607650B1 (de)
EP (1) EP1231300B1 (de)
KR (1) KR100705371B1 (de)
AT (1) ATE353377T1 (de)
DE (1) DE60033314T2 (de)
TW (1) TW466729B (de)
WO (1) WO2001007687A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
JP4678720B2 (ja) * 2005-05-31 2011-04-27 三洋電機株式会社 回路基板およびその製造方法、半導体装置およびその製造方法
TWI320606B (en) * 2006-08-07 2010-02-11 Epistar Corp A method for making a light emitting diode by electroless plating
KR200466385Y1 (ko) 2008-07-25 2013-04-17 주식회사 케이씨텍 기판도금방법 및 이를 채용한 기판도금장치
JP6161863B2 (ja) * 2010-12-28 2017-07-12 株式会社荏原製作所 電気めっき方法
US9328427B2 (en) * 2012-09-28 2016-05-03 Sunpower Corporation Edgeless pulse plating and metal cleaning methods for solar cells
JP7697761B2 (ja) 2021-10-01 2025-06-24 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP2024000603A (ja) 2022-06-21 2024-01-09 住友電工デバイス・イノベーション株式会社 半導体装置および半導体装置の製造方法
CN116083844B (zh) * 2023-02-10 2025-07-04 山东微波电真空技术有限公司 一种衰减器制备方法及系统

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141940A (en) 1981-02-26 1982-09-02 Nec Home Electronics Ltd Manufacture of semiconductor device
US4466864A (en) 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
US5024735A (en) 1989-02-15 1991-06-18 Kadija Igor V Method and apparatus for manufacturing interconnects with fine lines and spacing
US5256565A (en) * 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
JPH04187793A (ja) * 1990-11-20 1992-07-06 Fujitsu Ltd 半導体装置及びその製造方法
US5252196A (en) * 1991-12-05 1993-10-12 Shipley Company Inc. Copper electroplating solutions and processes
JP2952539B2 (ja) * 1992-03-30 1999-09-27 セイコーインスツルメンツ株式会社 微細加工装置
US5302278A (en) * 1993-02-19 1994-04-12 Learonal, Inc. Cyanide-free plating solutions for monovalent metals
JPH06302607A (ja) * 1993-04-13 1994-10-28 Hitachi Ltd バンプ電極の形成方法およびそれを用いた半導体製造装置
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US5486282A (en) * 1994-11-30 1996-01-23 Ibm Corporation Electroetching process for seed layer removal in electrochemical fabrication of wafers
JPH09202990A (ja) * 1996-01-24 1997-08-05 Zenken:Kk 銅メッキ液
JPH1187274A (ja) * 1997-09-01 1999-03-30 Ebara Corp 半導体ウエハメッキ装置
JPH1197391A (ja) * 1997-09-16 1999-04-09 Ebara Corp 半導体ウエハー配線電解メッキ方法
US6187164B1 (en) * 1997-09-30 2001-02-13 Symyx Technologies, Inc. Method for creating and testing a combinatorial array employing individually addressable electrodes
JP3501265B2 (ja) * 1997-10-30 2004-03-02 富士通株式会社 半導体装置の製造方法
JP3191759B2 (ja) 1998-02-20 2001-07-23 日本電気株式会社 半導体装置の製造方法
US6113771A (en) * 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6056864A (en) * 1998-10-13 2000-05-02 Advanced Micro Devices, Inc. Electropolishing copper film to enhance CMP throughput
US6440289B1 (en) * 1999-04-02 2002-08-27 Advanced Micro Devices, Inc. Method for improving seed layer electroplating for semiconductor

Also Published As

Publication number Publication date
TW466729B (en) 2001-12-01
WO2001007687A1 (fr) 2001-02-01
KR100705371B1 (ko) 2007-04-11
EP1231300B1 (de) 2007-02-07
EP1231300A4 (de) 2005-01-26
US6607650B1 (en) 2003-08-19
DE60033314D1 (de) 2007-03-22
EP1231300A1 (de) 2002-08-14
KR20020029907A (ko) 2002-04-20
DE60033314T2 (de) 2007-08-30

Similar Documents

Publication Publication Date Title
SG83793A1 (en) Method for forming a copper layer over a semiconductor wafer
RU96104583A (ru) Способ обработки поверхностей и устройство для его осуществления
JP2002093761A5 (de)
DE69117998D1 (de) Vorrichtung und Verfahren zum Steuern eines Schweisszyklus
ATE353377T1 (de) Plattierungsverfahren, -vorrichtung und -system
DE69608579D1 (de) Elektrolytisches verfahren zur reinigung von elektrisch leitenden oberflächen
PT1072176E (pt) Metodo para fornecimento de pistas condutoras num circuito impresso e aparelho para executar o metodo
RU97121205A (ru) Способ микроплазменного оксидирования вентильных металлов и их сплавов и устройство для его осуществления
DE69300749D1 (de) Verfahren und Vorrichtung zur Oberflächenbehandlung.
RU97100692A (ru) Способ многофункциональной обработки поверхностей и устройство для его осуществления
ATE74112T1 (de) Verfahren und vorrichtung zur elektrochemischen entkeimung von waessern.
DE59810886D1 (de) Verfahren zum Zünden eines Lichtbogens zwischen einem Werkstück und einer abschmelzenden Elektrode
SG71181A1 (en) Anodizing apparatus and method and porous substrate
KR100683983B1 (ko) 새도우 마스크용 박판소재의 전기분해 디버링 장치
MY137770A (en) Metal finishing apparatus and metal finishing method using the same
CN212077188U (zh) 一种电镀挂具旋转设备
KR200159509Y1 (ko) 아연-니켈 도금작업시의 금속슬러지 유도제거장치
TW242591B (en) Method and apparatus for carrying out surface processes
JP3388900B2 (ja) 帯状金属板の電解処理方法，平版印刷版支持体の製造方法及び感光性平版印刷版の製造方法。
GB2060699A (en) Electroplating apparatus
JPH0488192A (ja) 部分めっき装置
SU850338A1 (ru) Способ электрохимической обработкиОТВЕРСТий
TW200420758A (en) Method and device for intermittent micro-pulsation electroplating
DE502005010079D1 (de) Vorrichtung und verfahren zur elektrochemischen oberflächenbehandlung
RU1806223C (ru) Устройство дл электрохимического травлени слитков металла

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties