ATE354864T1 - Verfahren zum selektiven entfernen einer metallschicht mittels strahlen mit kohlendioxid - Google Patents

Verfahren zum selektiven entfernen einer metallschicht mittels strahlen mit kohlendioxid

Info

Publication number
ATE354864T1
ATE354864T1 AT01970888T AT01970888T ATE354864T1 AT E354864 T1 ATE354864 T1 AT E354864T1 AT 01970888 T AT01970888 T AT 01970888T AT 01970888 T AT01970888 T AT 01970888T AT E354864 T1 ATE354864 T1 AT E354864T1
Authority
AT
Austria
Prior art keywords
layer
photoresist
metal
portions
metal layer
Prior art date
Application number
AT01970888T
Other languages
English (en)
Inventor
Charles W Bowers
Original Assignee
Boc Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Inc filed Critical Boc Inc
Application granted granted Critical
Publication of ATE354864T1 publication Critical patent/ATE354864T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
AT01970888T 2000-09-12 2001-09-12 Verfahren zum selektiven entfernen einer metallschicht mittels strahlen mit kohlendioxid ATE354864T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/660,354 US6500758B1 (en) 2000-09-12 2000-09-12 Method for selective metal film layer removal using carbon dioxide jet spray

Publications (1)

Publication Number Publication Date
ATE354864T1 true ATE354864T1 (de) 2007-03-15

Family

ID=24649190

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01970888T ATE354864T1 (de) 2000-09-12 2001-09-12 Verfahren zum selektiven entfernen einer metallschicht mittels strahlen mit kohlendioxid

Country Status (10)

Country Link
US (1) US6500758B1 (de)
EP (1) EP1317767B1 (de)
JP (1) JP4009533B2 (de)
CN (1) CN1312731C (de)
AT (1) ATE354864T1 (de)
AU (1) AU2001290839A1 (de)
CA (1) CA2422062C (de)
DE (1) DE60126790T2 (de)
TW (1) TW520527B (de)
WO (1) WO2002023602A1 (de)

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GB0110241D0 (en) * 2001-04-26 2001-06-20 Trikon Holdings Ltd A method of filling a via or recess in a semiconductor substrate
DE10136937C1 (de) * 2001-07-28 2003-02-13 Fraunhofer Ges Forschung Elektrokapillare Reinigungsunterstützung in Geschirrspülmaschinen
US20050217706A1 (en) * 2002-04-05 2005-10-06 Souvik Banerjee Fluid assisted cryogenic cleaning
US6852173B2 (en) * 2002-04-05 2005-02-08 Boc, Inc. Liquid-assisted cryogenic cleaning
US20090126760A1 (en) * 2005-01-12 2009-05-21 Boc, Inc. System for cleaning a surface using crogenic aerosol and fluid reactant
US20070089761A1 (en) * 2005-10-21 2007-04-26 Souvik Banerjee Non-plasma method of removing photoresist from a substrate
US7931834B2 (en) * 2007-02-13 2011-04-26 Eastman Kodak Company Process for formation and collection of particles using cryogenic material
US7655496B1 (en) * 2007-07-31 2010-02-02 Flir Systems, Inc. Metal lift-off systems and methods using liquid solvent and frozen gas
US8454409B2 (en) * 2009-09-10 2013-06-04 Rave N.P., Inc. CO2 nozzles
US20120168210A1 (en) * 2011-01-05 2012-07-05 International Business Machines Corporation Methods and Structures Involving Terminal Connections
US8883565B2 (en) * 2011-10-04 2014-11-11 Infineon Technologies Ag Separation of semiconductor devices from a wafer carrier
JP2017500212A (ja) 2013-10-22 2017-01-05 トーソー エスエムディー，インク． 最適化テクスチャ処理表面と最適化の方法
CN105023841B (zh) * 2014-04-23 2017-12-26 沈阳芯源微电子设备有限公司 一种晶圆表面撕金去胶方法
KR20160057966A (ko) 2014-11-14 2016-05-24 가부시끼가이샤 도시바 처리 장치, 노즐 및 다이싱 장치
US9627259B2 (en) 2014-11-14 2017-04-18 Kabushiki Kaisha Toshiba Device manufacturing method and device
JP6305355B2 (ja) 2015-01-28 2018-04-04 株式会社東芝 デバイスの製造方法
JP6545511B2 (ja) 2015-04-10 2019-07-17 株式会社東芝 処理装置
DE102015117558A1 (de) * 2015-10-15 2017-04-20 Lpkf Laser & Electronics Ag Verfahren zum Herstellen von strukturierten Beschichtungen auf einem Formteil und Vorrichtung zur Durchführung des Verfahrens
CN106944817B (zh) * 2017-04-01 2023-09-22 宁波华斯特林电机制造有限公司 一种手机屏幕分离装置
JP7279024B2 (ja) * 2017-09-12 2023-05-22 アプライド マテリアルズ インコーポレイテッド 化学エッチングによる選択的堆積の欠陥除去
US11033930B2 (en) 2018-01-08 2021-06-15 Applied Materials, Inc. Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition
US11124659B2 (en) * 2018-01-30 2021-09-21 Lam Research Corporation Method to selectively pattern a surface for plasma resistant coat applications
CN108389784B (zh) * 2018-02-26 2019-04-30 清华大学 图案化的金属层的制备方法
CN114460819B (zh) * 2022-01-14 2024-01-26 北京量子信息科学研究院 用于电子束曝光的对准标记及其制备方法
CN114839844A (zh) * 2022-04-22 2022-08-02 浙江拓感科技有限公司 光刻胶外金属层的处理方法、去除光刻胶的方法及所用的设备

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US4655847A (en) 1983-09-01 1987-04-07 Tsuyoshi Ichinoseki Cleaning method
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Also Published As

Publication number Publication date
CN1312731C (zh) 2007-04-25
WO2002023602A1 (en) 2002-03-21
CA2422062A1 (en) 2002-03-21
CA2422062C (en) 2011-03-08
DE60126790T2 (de) 2007-10-31
TW520527B (en) 2003-02-11
JP4009533B2 (ja) 2007-11-14
EP1317767A1 (de) 2003-06-11
EP1317767B1 (de) 2007-02-21
DE60126790D1 (de) 2007-04-05
AU2001290839A1 (en) 2002-03-26
JP2004521482A (ja) 2004-07-15
CN1502118A (zh) 2004-06-02
US6500758B1 (en) 2002-12-31

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