ATE355399T1 - Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung - Google Patents

Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung

Info

Publication number
ATE355399T1
ATE355399T1 AT02716431T AT02716431T ATE355399T1 AT E355399 T1 ATE355399 T1 AT E355399T1 AT 02716431 T AT02716431 T AT 02716431T AT 02716431 T AT02716431 T AT 02716431T AT E355399 T1 ATE355399 T1 AT E355399T1
Authority
AT
Austria
Prior art keywords
metal deposition
electroless metal
solution
treated
supplied
Prior art date
Application number
AT02716431T
Other languages
English (en)
Inventor
Hiroshi Sato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE355399T1 publication Critical patent/ATE355399T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)
AT02716431T 2001-02-07 2002-01-29 Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung ATE355399T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001030824 2001-02-07

Publications (1)

Publication Number Publication Date
ATE355399T1 true ATE355399T1 (de) 2006-03-15

Family

ID=18894991

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02716431T ATE355399T1 (de) 2001-02-07 2002-01-29 Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung

Country Status (8)

Country Link
US (1) US20040062861A1 (de)
EP (1) EP1371755B1 (de)
JP (1) JP4083016B2 (de)
KR (1) KR100507019B1 (de)
CN (1) CN1223705C (de)
AT (1) ATE355399T1 (de)
DE (1) DE60218437D1 (de)
WO (1) WO2002063067A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4554881B2 (ja) * 2002-11-08 2010-09-29 旭化成株式会社 有機半導体素子の製造方法
FI20030816A7 (fi) * 2003-05-30 2004-12-01 Avantone Oy Menetelmä metallijohtimien valmistamiseksi substraatille
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
US20120058362A1 (en) * 2010-09-08 2012-03-08 Infineon Technologies Ag Method for depositing metal on a substrate; metal structure and method for plating a metal on a substrate
TWI485286B (zh) 2011-11-16 2015-05-21 荏原製作所股份有限公司 Electroless plating and electroless plating

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936541B1 (de) * 1969-08-15 1974-10-01
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
US5234499A (en) * 1990-06-26 1993-08-10 Dainippon Screen Mgf. Co., Ltd. Spin coating apparatus
EP0618504B1 (de) * 1993-03-25 2001-09-26 Tokyo Electron Limited Verfahren und Vorrichtung zur Beschichtung eines Filmes
WO1996032521A1 (fr) * 1995-04-10 1996-10-17 Kao Corporation Procede de metallisation au bain chaud, et procede et equipement de production de matrices
JPH08319578A (ja) * 1995-05-24 1996-12-03 Tdk Corp 湿式法による多層膜の製造方法およびその製造装置
JP3022392B2 (ja) * 1997-04-04 2000-03-21 スガ試験機株式会社 イオン交換膜への白金めっき方法
CN1190301C (zh) * 1997-08-25 2005-02-23 维尔克鲁工业公司 模腔的成形
JPH11140657A (ja) * 1997-11-12 1999-05-25 Ricoh Co Ltd 無電解めっき方法
JP3065039B2 (ja) * 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6984302B2 (en) * 1998-12-30 2006-01-10 Intel Corporation Electroplating cell based upon rotational plating solution flow
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6153935A (en) * 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6376013B1 (en) * 1999-10-06 2002-04-23 Advanced Micro Devices, Inc. Multiple nozzles for dispensing resist
US6403500B1 (en) * 2001-01-12 2002-06-11 Advanced Micro Devices, Inc. Cross-shaped resist dispensing system and method

Also Published As

Publication number Publication date
JPWO2002063067A1 (ja) 2004-06-10
EP1371755A4 (de) 2005-07-27
JP4083016B2 (ja) 2008-04-30
KR100507019B1 (ko) 2005-08-09
CN1223705C (zh) 2005-10-19
EP1371755B1 (de) 2007-02-28
DE60218437D1 (de) 2007-04-12
US20040062861A1 (en) 2004-04-01
CN1491297A (zh) 2004-04-21
KR20030079985A (ko) 2003-10-10
WO2002063067A1 (fr) 2002-08-15
EP1371755A1 (de) 2003-12-17

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