ATE355615T1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
ATE355615T1
ATE355615T1 AT00976350T AT00976350T ATE355615T1 AT E355615 T1 ATE355615 T1 AT E355615T1 AT 00976350 T AT00976350 T AT 00976350T AT 00976350 T AT00976350 T AT 00976350T AT E355615 T1 ATE355615 T1 AT E355615T1
Authority
AT
Austria
Prior art keywords
layers
active region
undoped layers
impurities
undoped
Prior art date
Application number
AT00976350T
Other languages
English (en)
Inventor
Toshiya Yokogawa
Kunimasa Takahashi
Osamu Kusumoto
Makoto Kitabatake
Takeshi Uenoyama
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of ATE355615T1 publication Critical patent/ATE355615T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Noodles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
AT00976350T 2000-03-03 2000-11-20 Halbleiteranordnung ATE355615T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000058964 2000-03-03

Publications (1)

Publication Number Publication Date
ATE355615T1 true ATE355615T1 (de) 2006-03-15

Family

ID=18579479

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00976350T ATE355615T1 (de) 2000-03-03 2000-11-20 Halbleiteranordnung

Country Status (10)

Country Link
US (2) US6690035B1 (de)
EP (1) EP1189287B1 (de)
JP (1) JP3527496B2 (de)
KR (1) KR100655022B1 (de)
CN (1) CN1181561C (de)
AT (1) ATE355615T1 (de)
AU (1) AU1416601A (de)
DE (1) DE60033656T2 (de)
TW (1) TW473843B (de)
WO (1) WO2001067521A1 (de)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE355615T1 (de) 2000-03-03 2006-03-15 Matsushita Electric Industrial Co Ltd Halbleiteranordnung
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
US6852602B2 (en) * 2001-01-31 2005-02-08 Matsushita Electric Industrial Co., Ltd. Semiconductor crystal film and method for preparation thereof
JP2002252233A (ja) * 2001-02-22 2002-09-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6906350B2 (en) * 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
EP1306890A2 (de) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Halbleitersubstrat und -bauelement aus SiC und Verfahren zu deren Herstellung
JP2003234301A (ja) * 2001-10-25 2003-08-22 Matsushita Electric Ind Co Ltd 半導体基板、半導体素子及びその製造方法
US6897495B2 (en) * 2001-10-31 2005-05-24 The Furukawa Electric Co., Ltd Field effect transistor and manufacturing method therefor
WO2003050849A2 (en) * 2001-12-06 2003-06-19 Hrl Laboratories, Llc High power-low noise microwave gan heterojunction field effet transistor
US7919791B2 (en) 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
KR101017657B1 (ko) 2002-04-30 2011-02-25 크리 인코포레이티드 고 전압 스위칭 디바이스 및 이의 제조 방법
DE10250889B4 (de) * 2002-10-31 2006-12-07 Advanced Micro Devices, Inc., Sunnyvale Verbesserte SiC-Barrierenschicht für eine Kupfermetallisierungsschicht mit einem Dielektrikum mit kleinem ε und Verfahren zur Herstellung derselben
US6956239B2 (en) 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
JP4469139B2 (ja) * 2003-04-28 2010-05-26 シャープ株式会社 化合物半導体ｆｅｔ
US7253015B2 (en) 2004-02-17 2007-08-07 Velox Semiconductor Corporation Low doped layer for nitride-based semiconductor device
DE102005013894B4 (de) * 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
US7348612B2 (en) 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7265399B2 (en) 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
JP4594760B2 (ja) * 2005-02-09 2010-12-08 株式会社東芝 個体認証装置
US8203185B2 (en) 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
DE102005046706B4 (de) 2005-09-29 2007-07-05 Siced Electronics Development Gmbh & Co. Kg JBS-SiC-Halbleiterbauelement
US7402844B2 (en) 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
JP2007208036A (ja) * 2006-02-02 2007-08-16 Sanken Electric Co Ltd 半導体素子
JP2007305609A (ja) * 2006-04-10 2007-11-22 Matsushita Electric Ind Co Ltd 半導体装置
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
WO2008023821A1 (fr) * 2006-08-25 2008-02-28 National Institute For Materials Science Semi-conducteur et son procédé de production
US7646043B2 (en) 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
JP5022683B2 (ja) * 2006-11-30 2012-09-12 株式会社東芝 半導体装置の製造方法
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
JPWO2009011394A1 (ja) * 2007-07-17 2010-09-24 住友電気工業株式会社 電子デバイスを作製する方法、エピタキシャル基板を作製する方法、ｉｉｉ族窒化物半導体素子及び窒化ガリウムエピタキシャル基板
JP2009088223A (ja) * 2007-09-28 2009-04-23 Hitachi Cable Ltd 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置
JP4309967B2 (ja) * 2007-10-15 2009-08-05 パナソニック株式会社 半導体装置およびその製造方法
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
US7741144B2 (en) * 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
US7833885B2 (en) 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US8497527B2 (en) * 2008-03-12 2013-07-30 Sensor Electronic Technology, Inc. Device having active region with lower electron concentration
FR2934716B1 (fr) * 2008-07-31 2010-09-10 Commissariat Energie Atomique Diode electroluminescente en materiau semiconducteur et son procede de fabrication
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
US20100059110A1 (en) * 2008-09-11 2010-03-11 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
DE102008042035A1 (de) * 2008-09-12 2010-03-18 Robert Bosch Gmbh Halbleiteranordnung sowie Verfahren zum Herstellen einer Halbleiteranordnung
WO2011011301A2 (en) * 2009-07-23 2011-01-27 Applied Materials, Inc. A mixed silicon phase film for high efficiency thin film silicon solar cells
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
JP5075280B2 (ja) 2009-10-23 2012-11-21 パナソニック株式会社 半導体装置およびその製造方法
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
US20110232753A1 (en) * 2010-03-23 2011-09-29 Applied Materials, Inc. Methods of forming a thin-film solar energy device
JP5370279B2 (ja) * 2010-06-11 2013-12-18 豊田合成株式会社 ｎ型ＩＩＩ族窒化物半導体の製造方法
WO2011160004A1 (en) * 2010-06-18 2011-12-22 Cambridge Nanotech Inc. Method and apparatus for precursor delivery
WO2012032735A1 (ja) 2010-09-06 2012-03-15 パナソニック株式会社 半導体装置およびその製造方法
JP5075959B2 (ja) * 2010-09-14 2012-11-21 株式会社東芝 抵抗変化メモリ
KR20120032258A (ko) * 2010-09-28 2012-04-05 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
US8318550B2 (en) * 2011-04-08 2012-11-27 Micron Technology, Inc. Multilayer select devices and methods related thereto
CN103608925B (zh) 2011-07-13 2017-06-13 应用材料公司 制造薄膜晶体管器件的方法
US8866147B2 (en) 2011-12-22 2014-10-21 Avogy, Inc. Method and system for a GaN self-aligned vertical MESFET
WO2013052298A1 (en) 2011-10-07 2013-04-11 Applied Materials, Inc. Methods for depositing a silicon containing layer with argon gas dilution
WO2014031119A1 (en) 2012-08-23 2014-02-27 National University Corporation Tokyo University Of Agriculture And Technology Highly transparent aluminum nitride single crystalline layers and devices made therefrom
JP5577478B1 (ja) 2012-10-30 2014-08-20 パナソニック株式会社 半導体装置
US9293627B1 (en) * 2012-12-03 2016-03-22 Sandia Corporation Sub-wavelength antenna enhanced bilayer graphene tunable photodetector
EP2951869A1 (de) 2013-01-29 2015-12-09 Hexatech Inc. Optoelektronische vorrichtungen mit einem einkristallinen aluminiumnitridsubstrat
EP2973719B1 (de) * 2013-03-14 2021-04-21 Hexatech Inc. Leistungshalbleiterbauelemente mit einem einkristallinen aluminiumnitridsubstrat
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same
US8975641B1 (en) * 2013-08-26 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having an ohmic contact by gradient layer and method of making the same
US9865714B2 (en) * 2016-04-06 2018-01-09 International Business Machines Corporation III-V lateral bipolar junction transistor
JP6840030B2 (ja) 2017-05-19 2021-03-10 Ntn株式会社 三相交流用絶縁型スイッチング電源
JP6817894B2 (ja) 2017-05-19 2021-01-20 Ntn株式会社 三相交流用絶縁型スイッチング電源
JP6800098B2 (ja) 2017-06-23 2020-12-16 Ntn株式会社 三相交流用絶縁型スイッチング電源
EP3664150B1 (de) * 2018-12-06 2025-07-02 Infineon Technologies Austria AG Halbleiterbauelement
US11670637B2 (en) * 2019-02-19 2023-06-06 Intel Corporation Logic circuit with indium nitride quantum well
CN112398003B (zh) * 2019-08-19 2023-01-06 朗美通日本株式会社 调制掺杂半导体激光器及其制造方法
CN112713199B (zh) * 2019-10-25 2022-10-11 株洲中车时代电气股份有限公司 碳化硅肖特基二极管及其制备方法
CN112750896B (zh) * 2019-10-31 2022-08-16 株洲中车时代电气股份有限公司 碳化硅肖特基二极管及其制备方法
WO2021239729A1 (en) 2020-05-26 2021-12-02 Brolis Sensor Technology, Uab Optoelectronic devices with tunable optical mode and carrier distribution in the waveguides
JP7187620B1 (ja) * 2021-07-13 2022-12-12 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
JPWO2023162521A1 (de) * 2022-02-22 2023-08-31
US12701762B2 (en) * 2022-10-27 2026-08-04 Applied Materials, Inc. Carbon-containing cap layer for doped semiconductor epitaxial layer

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2077474B1 (de) * 1969-12-24 1973-10-19 Labo Electronique Physique
JPS54132173A (en) * 1978-04-05 1979-10-13 Fuji Electric Co Ltd Schottky barrier diode
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JP2586053B2 (ja) 1987-09-25 1997-02-26 日本電気株式会社 電界効果トランジスタ
JPH0513446A (ja) 1991-07-08 1993-01-22 Nippondenso Co Ltd 化合物半導体装置
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
CA2113336C (en) 1993-01-25 2001-10-23 David J. Larkin Compound semi-conductors and controlled doping thereof
JPH06310536A (ja) 1993-02-22 1994-11-04 Sumitomo Electric Ind Ltd 電界効果トランジスタおよびその製造方法
US5493136A (en) * 1993-02-22 1996-02-20 Sumitomo Electric Industries, Ltd. Field effect transistor and method of manufacturing the same
JPH06349860A (ja) 1993-06-08 1994-12-22 Hitachi Ltd 半導体装置
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
JP3154939B2 (ja) 1996-04-24 2001-04-09 松下電子工業株式会社 電界効果型トランジスタ
JP3442668B2 (ja) * 1998-10-23 2003-09-02 カナレ電気株式会社 量子波干渉層を有した電界効果トランジスタ
ATE355615T1 (de) 2000-03-03 2006-03-15 Matsushita Electric Industrial Co Ltd Halbleiteranordnung
EP1684359A3 (de) 2000-05-31 2006-10-25 Matsushita Electrical Industrial Co., Ltd Misfet

Also Published As

Publication number Publication date
KR20020010632A (ko) 2002-02-04
AU1416601A (en) 2001-09-17
JP3527496B2 (ja) 2004-05-17
DE60033656D1 (de) 2007-04-12
EP1189287A4 (de) 2003-05-21
CN1181561C (zh) 2004-12-22
US6989553B2 (en) 2006-01-24
US6690035B1 (en) 2004-02-10
KR100655022B1 (ko) 2006-12-07
US20040217375A1 (en) 2004-11-04
EP1189287B1 (de) 2007-02-28
WO2001067521A1 (en) 2001-09-13
TW473843B (en) 2002-01-21
CN1349663A (zh) 2002-05-15
EP1189287A1 (de) 2002-03-20
DE60033656T2 (de) 2007-06-21

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