ATE356180T1 - Verfahren zum bearbeiten von keramik und einkristallen& x9;& x9; - Google Patents

Verfahren zum bearbeiten von keramik und einkristallen& x9;& x9;

Info

Publication number
ATE356180T1
ATE356180T1 AT04749499T AT04749499T ATE356180T1 AT E356180 T1 ATE356180 T1 AT E356180T1 AT 04749499 T AT04749499 T AT 04749499T AT 04749499 T AT04749499 T AT 04749499T AT E356180 T1 ATE356180 T1 AT E356180T1
Authority
AT
Austria
Prior art keywords
single crystals
processing ceramics
substrate
machine tool
slurry
Prior art date
Application number
AT04749499T
Other languages
English (en)
Inventor
Ronald W Laconto
Douglas E Ward
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Application granted granted Critical
Publication of ATE356180T1 publication Critical patent/ATE356180T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Glass Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
AT04749499T 2003-04-25 2004-03-29 Verfahren zum bearbeiten von keramik und einkristallen& x9;& x9; ATE356180T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/423,283 US7306748B2 (en) 2003-04-25 2003-04-25 Methods for machining ceramics

Publications (1)

Publication Number Publication Date
ATE356180T1 true ATE356180T1 (de) 2007-03-15

Family

ID=33415867

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04749499T ATE356180T1 (de) 2003-04-25 2004-03-29 Verfahren zum bearbeiten von keramik und einkristallen& x9;& x9;

Country Status (15)

Country Link
US (1) US7306748B2 (de)
EP (1) EP1618163B1 (de)
JP (2) JP2006524583A (de)
KR (1) KR100740798B1 (de)
CN (1) CN100352881C (de)
AT (1) ATE356180T1 (de)
AU (1) AU2004235288B2 (de)
CA (1) CA2521517C (de)
DE (1) DE602004005174T2 (de)
DK (1) DK1618163T3 (de)
ES (1) ES2284034T3 (de)
MY (1) MY137316A (de)
RU (1) RU2292372C2 (de)
TW (1) TWI277646B (de)
WO (1) WO2004096941A1 (de)

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US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
RU2321542C2 (ru) * 2005-02-07 2008-04-10 Александр Васильевич Толчев Способ получения абразивных микропорошков на основе корунда
US20060196849A1 (en) * 2005-03-04 2006-09-07 Kevin Moeggenborg Composition and method for polishing a sapphire surface
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
CN101415864B (zh) * 2005-11-28 2014-01-08 晶体公司 具有减少缺陷的大的氮化铝晶体及其制造方法
US7641735B2 (en) 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
DE102006007888A1 (de) 2006-02-21 2007-08-23 Degussa Gmbh Aluminiumoxid enthaltende Dispersion, Zubereitung enthaltend diese Dispersion und ein Melaminharz und mittels dieser Zubereitung hergestelles gehärtetes Produkt
CN101454487B (zh) 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
TWI386468B (zh) * 2006-12-20 2013-02-21 Saint Gobain Ceramics 加工無機非金屬工件之方法
EP2121242B1 (de) * 2006-12-28 2012-02-15 Saint-Gobain Ceramics & Plastics, Inc. Verfahren zum schleifen eines substrats aus saphir
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
KR101230941B1 (ko) 2006-12-28 2013-02-07 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 사파이어 기판 및 그 제조 방법
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
WO2008094464A2 (en) 2007-01-26 2008-08-07 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
WO2009046296A1 (en) * 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
CA2700408A1 (en) 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Improved silicon carbide particles, methods of fabrication, and methods using same
TWI495713B (zh) * 2010-04-28 2015-08-11 日本百考基股份有限公司 藍寶石研磨用漿體及藍寶石之研磨方法
JP5806734B2 (ja) 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
EP2973664B1 (de) 2013-03-15 2020-10-14 Crystal Is, Inc. Ultraviolet-lichtemittierende vorrichtung und herstellungsverfahren eines kontaktes zu einer ultraviolet-lichtemittierenden vorrichtung
CN103484026A (zh) * 2013-09-30 2014-01-01 江苏中晶科技有限公司 高效陶瓷抛光液及其制备方法
CN104191319B (zh) * 2014-09-02 2016-08-17 哈尔滨工业大学 一种硼化物陶瓷材料表面磨削的方法
WO2016060113A1 (ja) * 2014-10-14 2016-04-21 花王株式会社 サファイア板用研磨液組成物
JP2016124915A (ja) * 2014-12-26 2016-07-11 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、及びセラミック製部品の製造方法
JP6756460B2 (ja) * 2014-12-26 2020-09-16 株式会社フジミインコーポレーテッド 研磨方法及びセラミック製部品の製造方法
CN109262373B (zh) * 2017-07-18 2020-06-02 东莞华晶粉末冶金有限公司 氧化锆陶瓷的研磨方法
CN111702653B (zh) * 2020-05-15 2021-11-19 西安交通大学 一种平面光学元件行星式研磨装置及研磨方法

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Also Published As

Publication number Publication date
AU2004235288B2 (en) 2007-01-11
EP1618163A1 (de) 2006-01-25
JP2011062815A (ja) 2011-03-31
US20040226917A1 (en) 2004-11-18
DE602004005174T2 (de) 2007-11-08
US7306748B2 (en) 2007-12-11
TWI277646B (en) 2007-04-01
JP2006524583A (ja) 2006-11-02
CA2521517C (en) 2011-05-24
DK1618163T3 (da) 2007-07-02
KR20060011972A (ko) 2006-02-06
KR100740798B1 (ko) 2007-07-20
MY137316A (en) 2009-01-30
HK1091855A1 (en) 2007-01-26
EP1618163B1 (de) 2007-03-07
CN100352881C (zh) 2007-12-05
TW200424303A (en) 2004-11-16
CA2521517A1 (en) 2004-11-11
WO2004096941A1 (en) 2004-11-11
RU2292372C2 (ru) 2007-01-27
AU2004235288A1 (en) 2004-11-11
RU2005132523A (ru) 2006-02-27
JP5486473B2 (ja) 2014-05-07
ES2284034T3 (es) 2007-11-01
CN1777662A (zh) 2006-05-24
DE602004005174D1 (de) 2007-04-19

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