ATE358333T1 - Integration optoelektronischer bauelemente - Google Patents

Integration optoelektronischer bauelemente

Info

Publication number
ATE358333T1
ATE358333T1 AT02756474T AT02756474T ATE358333T1 AT E358333 T1 ATE358333 T1 AT E358333T1 AT 02756474 T AT02756474 T AT 02756474T AT 02756474 T AT02756474 T AT 02756474T AT E358333 T1 ATE358333 T1 AT E358333T1
Authority
AT
Austria
Prior art keywords
active device
contacts
electronic chip
top active
integration
Prior art date
Application number
AT02756474T
Other languages
English (en)
Inventor
Greg Dudoff
John Trezza
Original Assignee
Xanoptix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/896,189 external-priority patent/US6620642B2/en
Priority claimed from US09/897,160 external-priority patent/US6724794B2/en
Priority claimed from US09/897,158 external-priority patent/US6753197B2/en
Priority claimed from US09/896,983 external-priority patent/US6790691B2/en
Application filed by Xanoptix Inc filed Critical Xanoptix Inc
Application granted granted Critical
Publication of ATE358333T1 publication Critical patent/ATE358333T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
AT02756474T 2001-06-29 2002-06-28 Integration optoelektronischer bauelemente ATE358333T1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US09/896,189 US6620642B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US09/897,160 US6724794B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US09/897,158 US6753197B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US09/896,983 US6790691B2 (en) 2001-06-29 2001-06-29 Opto-electronic device integration
US36599602P 2002-03-19 2002-03-19
US36603202P 2002-03-19 2002-03-19
US36599802P 2002-03-19 2002-03-19

Publications (1)

Publication Number Publication Date
ATE358333T1 true ATE358333T1 (de) 2007-04-15

Family

ID=27569722

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02756474T ATE358333T1 (de) 2001-06-29 2002-06-28 Integration optoelektronischer bauelemente

Country Status (7)

Country Link
EP (3) EP1399952A4 (de)
KR (5) KR100918512B1 (de)
CN (4) CN100367584C (de)
AT (1) ATE358333T1 (de)
CA (4) CA2447345A1 (de)
DE (1) DE60219161T2 (de)
WO (4) WO2003003427A1 (de)

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US11294136B2 (en) 2008-08-29 2022-04-05 Corning Optical Communications LLC High density and bandwidth fiber optic apparatuses and related equipment and methods
US20100259823A1 (en) * 2009-04-09 2010-10-14 General Electric Company Nanostructured anti-reflection coatings and associated methods and devices
WO2010148336A1 (en) * 2009-06-19 2010-12-23 Corning Cable Systems Llc High density and bandwidth fiber optic apparatuses and related equipment and methods
CN102200612A (zh) * 2011-04-27 2011-09-28 中国科学院微电子研究所 嵌入光纤的玻璃板及其制造方法
CN104422987B (zh) * 2013-09-03 2018-06-22 中国科学院微电子研究所 互连结构
CN104766903B (zh) * 2013-12-03 2018-06-29 光澄科技股份有限公司 集成模块及其形成方法
FR3023066B1 (fr) * 2014-06-30 2017-10-27 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes et un circuit de commande
JP2016076543A (ja) * 2014-10-03 2016-05-12 株式会社東芝 固体撮像装置の製造方法
CN104362196A (zh) * 2014-11-25 2015-02-18 苏州矩阵光电有限公司 一种铟镓砷红外探测器及其制备方法
DE102015106712A1 (de) * 2015-04-30 2016-11-03 Osram Opto Semiconductors Gmbh Anordnung mit einem Substrat und einem Halbleiterlaser
US10267988B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photonic package and method forming same
US10833483B2 (en) * 2017-12-07 2020-11-10 Lumentum Operations Llc Emitter array having structure for submount attachment
JP7021618B2 (ja) * 2018-08-10 2022-02-17 オムロン株式会社 レーザダイオードアレイデバイスの製造方法、レーザ発光回路及び測距装置
KR102563570B1 (ko) * 2018-10-24 2023-08-04 삼성전자주식회사 반도체 레이저 장치
CN116134356A (zh) * 2020-07-20 2023-05-16 苹果公司 具有受控塌陷芯片连接的光子集成电路
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US11977256B2 (en) * 2022-02-25 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package comprising optically coupled IC chips
US12111207B2 (en) 2022-09-23 2024-10-08 Apple Inc. Despeckling in optical measurement systems

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Also Published As

Publication number Publication date
KR20040064219A (ko) 2004-07-16
WO2003003420A1 (en) 2003-01-09
CN1285098C (zh) 2006-11-15
EP1410424A1 (de) 2004-04-21
DE60219161D1 (de) 2007-05-10
EP1410424A4 (de) 2007-03-21
CN100367584C (zh) 2008-02-06
CA2447369A1 (en) 2003-01-09
CA2447368A1 (en) 2003-01-09
EP1399953A4 (de) 2004-09-01
DE60219161T2 (de) 2007-12-13
CN1522460A (zh) 2004-08-18
WO2003003426A1 (en) 2003-01-09
WO2003003425A1 (en) 2003-01-09
CN1579002A (zh) 2005-02-09
EP1399952A1 (de) 2004-03-24
KR100936525B1 (ko) 2010-01-13
CN1274005C (zh) 2006-09-06
CA2447365A1 (en) 2003-01-09
KR20040015748A (ko) 2004-02-19
KR20040060855A (ko) 2004-07-06
EP1399952A4 (de) 2007-03-21
KR20090082274A (ko) 2009-07-29
WO2003003427A1 (en) 2003-01-09
KR100918512B1 (ko) 2009-09-24
CA2447345A1 (en) 2003-01-09
KR100964927B1 (ko) 2010-06-25
EP1399953B1 (de) 2007-03-28
KR20040015284A (ko) 2004-02-18
CN1526156A (zh) 2004-09-01
EP1399953A1 (de) 2004-03-24
CN1522459A (zh) 2004-08-18

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