ATE545958T1 - Halbleiterbauelement und dessen herstellungsverfahren - Google Patents

Halbleiterbauelement und dessen herstellungsverfahren

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Publication number
ATE545958T1
ATE545958T1 AT01969945T AT01969945T ATE545958T1 AT E545958 T1 ATE545958 T1 AT E545958T1 AT 01969945 T AT01969945 T AT 01969945T AT 01969945 T AT01969945 T AT 01969945T AT E545958 T1 ATE545958 T1 AT E545958T1
Authority
AT
Austria
Prior art keywords
drift region
indirectly
membrane
connected directly
production process
Prior art date
Application number
AT01969945T
Other languages
English (en)
Inventor
Florin Udrea
Gehan Amaratunga
Original Assignee
Cambridge Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Semiconductor Ltd filed Critical Cambridge Semiconductor Ltd
Application granted granted Critical
Publication of ATE545958T1 publication Critical patent/ATE545958T1/de

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/667—Vertical DMOS [VDMOS] FETs having substrates comprising insulating layers, e.g. SOI-VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
AT01969945T 2000-09-21 2001-09-20 Halbleiterbauelement und dessen herstellungsverfahren ATE545958T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23421900P 2000-09-21 2000-09-21
PCT/GB2001/004211 WO2002025700A2 (en) 2000-09-21 2001-09-20 Semiconductor device and method of forming a semiconductor device

Publications (1)

Publication Number Publication Date
ATE545958T1 true ATE545958T1 (de) 2012-03-15

Family

ID=22880440

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01969945T ATE545958T1 (de) 2000-09-21 2001-09-20 Halbleiterbauelement und dessen herstellungsverfahren

Country Status (12)

Country Link
US (5) US6703684B2 (de)
EP (1) EP1319252B1 (de)
JP (1) JP5392959B2 (de)
KR (1) KR100841141B1 (de)
CN (1) CN1233041C (de)
AT (1) ATE545958T1 (de)
AU (2) AU9006801A (de)
CA (1) CA2423028A1 (de)
IL (2) IL154945A0 (de)
RU (1) RU2276429C2 (de)
WO (1) WO2002025700A2 (de)
ZA (1) ZA200302065B (de)

Families Citing this family (141)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19909105A1 (de) * 1999-03-02 2000-09-14 Siemens Ag Symmetrischer Thyristor mit verringerter Dicke und Herstellungsverfahren dafür
CN1233041C (zh) * 2000-09-21 2005-12-21 剑桥半导体有限公司 半导体器件及其制作方法
GB2371922B (en) * 2000-09-21 2004-12-15 Cambridge Semiconductor Ltd Semiconductor device and method of forming a semiconductor device
JP2005507564A (ja) * 2001-11-01 2005-03-17 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 薄膜ラテラルｓｏｉパワーデバイス
US6900501B2 (en) 2001-11-02 2005-05-31 Cree Microwave, Inc. Silicon on insulator device with improved heat removal
FR2834575B1 (fr) * 2002-01-09 2004-07-09 St Microelectronics Sa Procede de modelisation et de realisation d'un circuit integre comportant au moins un transistor a effet de champ a grille isolee, et circuit integre correspondant
JP2005531153A (ja) * 2002-06-26 2005-10-13 ケンブリッジ　セミコンダクター　リミテッド ラテラル半導体デバイス
EP1576669A1 (de) * 2002-12-10 2005-09-21 Power Electronics Design Centre Integrierte leistungsschaltkreise
JP4220229B2 (ja) * 2002-12-16 2009-02-04 大日本印刷株式会社 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法
WO2004066391A1 (ja) * 2003-01-20 2004-08-05 Mitsubishi Denki Kabushiki Kaisha 半導体装置
AU2004231581A1 (en) * 2003-04-23 2004-11-04 Lee, Bong Hoon Mr. Method and system for coupling waveguides
US6830963B1 (en) * 2003-10-09 2004-12-14 Micron Technology, Inc. Fully depleted silicon-on-insulator CMOS logic
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
US7550781B2 (en) * 2004-02-12 2009-06-23 International Rectifier Corporation Integrated III-nitride power devices
CN100495738C (zh) * 2004-02-12 2009-06-03 国际整流器公司 集成ⅲ族氮化物功率器件
US7075093B2 (en) 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
US7105875B2 (en) * 2004-06-03 2006-09-12 Wide Bandgap, Llc Lateral power diodes
EP1617476A3 (de) * 2004-07-16 2007-12-26 Power Electronics Design Centre Vertikale Integration in integrierten Leistungsschaltkreisen
US20060022263A1 (en) * 2004-07-30 2006-02-02 International Rectifier Corporation Selective substrate thinning for power mosgated devices
DE102004037087A1 (de) * 2004-07-30 2006-03-23 Advanced Micro Devices, Inc., Sunnyvale Selbstvorspannende Transistorstruktur und SRAM-Zellen mit weniger als sechs Transistoren
ATE511213T1 (de) * 2004-09-03 2011-06-15 Cambridge Semiconductor Ltd Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
GB2418063A (en) * 2004-09-08 2006-03-15 Cambridge Semiconductor Ltd SOI power device
DE102004047358B3 (de) * 2004-09-29 2005-11-03 Infineon Technologies Ag In zwei Halbleiterkörpern integrierte Schaltungsanordnung mit einem Leistungsbauelement und einer Ansteuerschaltung
US20080291973A1 (en) * 2004-11-16 2008-11-27 Acco Integrated Ultra-Wideband (Uwb) Pulse Generator
JP5011681B2 (ja) 2004-12-02 2012-08-29 日産自動車株式会社 半導体装置
US7045830B1 (en) * 2004-12-07 2006-05-16 Fairchild Semiconductor Corporation High-voltage diodes formed in advanced power integrated circuit devices
US7547964B2 (en) * 2005-04-25 2009-06-16 International Rectifier Corporation Device packages having a III-nitride based power semiconductor device
US7301220B2 (en) 2005-05-20 2007-11-27 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
DE102005027369A1 (de) * 2005-06-14 2006-12-28 Atmel Germany Gmbh Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises
WO2007003967A2 (en) * 2005-07-06 2007-01-11 Cambridge Semiconductor Limited Switch mode power supply control systems
EP1935026A1 (de) 2005-10-12 2008-06-25 Acco Feldeffekttransistor mit isoliertem gate mit einem dummie-gate
JP5003043B2 (ja) * 2005-10-26 2012-08-15 株式会社デンソー 半導体装置
KR100684199B1 (ko) * 2005-11-15 2007-02-20 삼성전자주식회사 전력 반도체 장치 및 그 제조 방법
US7710098B2 (en) * 2005-12-16 2010-05-04 Cambridge Semiconductor Limited Power supply driver circuit
GB0615029D0 (en) * 2005-12-22 2006-09-06 Cambridge Semiconductor Ltd Switch mode power supply controllers
US7733098B2 (en) * 2005-12-22 2010-06-08 Cambridge Semiconductor Limited Saturation detection circuits
US7465964B2 (en) 2005-12-30 2008-12-16 Cambridge Semiconductor Limited Semiconductor device in which an injector region is isolated from a substrate
US7525151B2 (en) * 2006-01-05 2009-04-28 International Rectifier Corporation Vertical DMOS device in integrated circuit
JP2007243080A (ja) * 2006-03-13 2007-09-20 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
US7449762B1 (en) 2006-04-07 2008-11-11 Wide Bandgap Llc Lateral epitaxial GaN metal insulator semiconductor field effect transistor
US7842568B2 (en) * 2006-06-28 2010-11-30 Great Wall Semiconductor Corporation Lateral power semiconductor device for high frequency power conversion system, has isolation layer formed over substrate for reducing minority carrier storage in substrate
US20080061309A1 (en) * 2006-07-21 2008-03-13 Young Sir Chung Semiconductor device with under-filled heat extractor
FR2905519B1 (fr) * 2006-08-31 2008-12-19 St Microelectronics Sa Procede de fabrication de circuit integre a transistors completement depletes et partiellement depletes
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US8263613B2 (en) * 2007-02-16 2012-09-11 Affinium Pharmaceuticals, Inc. Salts, prodrugs and polymorphs of fab I inhibitors
JP4616856B2 (ja) * 2007-03-27 2011-01-19 株式会社日立製作所 半導体装置、及び半導体装置の製造方法
US9024378B2 (en) * 2013-02-09 2015-05-05 Alpha And Omega Semiconductor Incorporated Device structure and manufacturing method using HDP deposited source-body implant block
WO2008152911A1 (ja) * 2007-06-08 2008-12-18 Panasonic Electric Works Co., Ltd. 半導体装置とその製造方法
US7989319B2 (en) * 2007-08-07 2011-08-02 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8859396B2 (en) 2007-08-07 2014-10-14 Semiconductor Components Industries, Llc Semiconductor die singulation method
US7714407B2 (en) 2007-08-29 2010-05-11 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
US7531993B2 (en) 2007-08-29 2009-05-12 Cambridge Semiconductor Limited Half bridge circuit and method of operating a half bridge circuit
US8304316B2 (en) * 2007-12-20 2012-11-06 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
US9620614B2 (en) * 2007-12-31 2017-04-11 Alpha And Omega Semiconductor Incorporated Sawtooth electric field drift region structure for power semiconductor devices
US7786535B2 (en) * 2008-01-11 2010-08-31 International Business Machines Corporation Design structures for high-voltage integrated circuits
US7790524B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
US7790543B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
US7772651B2 (en) * 2008-01-11 2010-08-10 International Business Machines Corporation Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits
DE102008007029B4 (de) 2008-01-31 2014-07-03 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Betrieb einer elektronischen Schaltung mit körpergesteuertem Doppelkanaltransistor und SRAM-Zelle mit körpergesteuertem Doppelkanaltransistor
US7863645B2 (en) * 2008-02-13 2011-01-04 ACCO Semiconductor Inc. High breakdown voltage double-gate semiconductor device
US8928410B2 (en) 2008-02-13 2015-01-06 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US9240402B2 (en) 2008-02-13 2016-01-19 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
KR101222758B1 (ko) * 2008-02-13 2013-01-15 아코 세미컨덕터, 인크 높은 항복 전압 이중 게이트 반도체 디바이스
US7969243B2 (en) 2009-04-22 2011-06-28 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US7804119B2 (en) * 2008-04-08 2010-09-28 International Business Machines Corporation Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit
US7700428B2 (en) * 2008-05-09 2010-04-20 International Business Machines Corporation Methods of fabricating a device structure for use as a memory cell in a non-volatile random access memory
US7804124B2 (en) * 2008-05-09 2010-09-28 International Business Machines Corporation Device structures for a memory cell of a non-volatile random access memory and design structures for a non-volatile random access memory
US7521280B1 (en) 2008-07-31 2009-04-21 International Business Machines Corporation Method for forming an optical image sensor with an integrated metal-gate reflector
US8174069B2 (en) 2008-08-05 2012-05-08 Cambridge Semiconductor Limited Power semiconductor device and a method of forming a power semiconductor device
US8080862B2 (en) * 2008-09-09 2011-12-20 Qualcomm Incorporate Systems and methods for enabling ESD protection on 3-D stacked devices
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US7808415B1 (en) * 2009-03-25 2010-10-05 Acco Semiconductor, Inc. Sigma-delta modulator including truncation and applications thereof
US8921168B2 (en) 2009-07-15 2014-12-30 Silanna Semiconductor U.S.A., Inc. Thin integrated circuit chip-on-board assembly and method of making
TWI509780B (zh) 2009-07-15 2015-11-21 西拉娜半導體美國股份有限公司 積體電路及其製造方法
US9496227B2 (en) 2009-07-15 2016-11-15 Qualcomm Incorporated Semiconductor-on-insulator with back side support layer
US9390974B2 (en) 2012-12-21 2016-07-12 Qualcomm Incorporated Back-to-back stacked integrated circuit assembly and method of making
TWI515878B (zh) 2009-07-15 2016-01-01 西拉娜半導體美國股份有限公司 絕緣體上半導體結構、自絕緣體上半導體主動元件之通道去除無用積聚多數型載子之方法、及製造積體電路之方法
US9466719B2 (en) 2009-07-15 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator with back side strain topology
TWI619235B (zh) 2009-07-15 2018-03-21 Qualcomm Incorporated 具背側散熱能力之絕緣體上半導體結構
JP2011044667A (ja) * 2009-08-24 2011-03-03 Shin Etsu Handotai Co Ltd 半導体装置の製造方法
US7952431B2 (en) * 2009-08-28 2011-05-31 Acco Semiconductor, Inc. Linearization circuits and methods for power amplification
US8482031B2 (en) 2009-09-09 2013-07-09 Cambridge Semiconductor Limited Lateral insulated gate bipolar transistors (LIGBTS)
US8115253B2 (en) * 2009-09-10 2012-02-14 United Microelectronics Corp. Ultra high voltage MOS transistor device
US8274129B2 (en) * 2009-10-23 2012-09-25 National Semiconductor Corporation Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method
EP2504082A4 (de) * 2009-11-25 2016-11-09 Univ Sydney Membran und membrantrennsystem
US8532584B2 (en) 2010-04-30 2013-09-10 Acco Semiconductor, Inc. RF switches
JP2012028565A (ja) * 2010-07-23 2012-02-09 Kansai Electric Power Co Inc:The バイポーラ半導体素子の製造方法およびバイポーラ半導体素子
US8610211B2 (en) 2010-07-23 2013-12-17 International Business Machines Corporation Semiconductor-on-insulator (SOI) structure with selectively placed sub-insulator layer void(s) and method of forming the SOI structure
US8389348B2 (en) * 2010-09-14 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
US9159825B2 (en) 2010-10-12 2015-10-13 Silanna Semiconductor U.S.A., Inc. Double-sided vertical semiconductor device with thinned substrate
EP2628186A4 (de) * 2010-10-12 2015-11-25 Silanna Semiconductor Usa Inc Vertikale halbleitervorrichtung mit einem verdünnten substrat
US9184214B2 (en) 2011-04-11 2015-11-10 Globalfoundries Inc. Semiconductor device exhibiting reduced parasitics and method for making same
US8524548B2 (en) 2011-04-26 2013-09-03 National Semiconductor Corporation DMOS Transistor with a cavity that lies below the drift region
DE102011052605B4 (de) * 2011-08-11 2014-07-10 Infineon Technologies Austria Ag Verfahren zur Herstellung einer Halbleitervorrichtung
US8709893B2 (en) * 2011-08-23 2014-04-29 Alpha & Omega Semiconductor, Inc. Method of making a low-Rdson vertical power MOSFET device
US8866252B2 (en) 2011-09-15 2014-10-21 Cambridge Semiconductor Limited Power semiconductor devices and fabrication methods
TWI478245B (zh) * 2011-09-27 2015-03-21 Alpha & Omega Semiconductor 一種低導通電阻的功率mos電晶體裝置及其製備方法
CN103021858B (zh) * 2011-09-27 2015-05-27 万国半导体股份有限公司 一种低导通电阻的功率mos晶体管器件及其制备方法
WO2013073042A1 (ja) * 2011-11-17 2013-05-23 富士電機株式会社 半導体装置および半導体装置の製造方法
US9184138B2 (en) 2011-12-29 2015-11-10 Stmicroelectronics (Grenoble 2) Sas Semiconductor integrated device with mechanically decoupled active area and related manufacturing process
JP2013229449A (ja) * 2012-04-25 2013-11-07 Advanced Power Device Research Association 窒化物系半導体素子
KR101928814B1 (ko) * 2012-05-04 2018-12-14 한국전자통신연구원 질화물계 화합물 전력반도체 장치 및 그 제조 방법
JP5904276B2 (ja) * 2012-05-18 2016-04-13 富士電機株式会社 半導体装置
SMT201900411T1 (it) 2012-06-19 2019-09-09 Debiopharm Int Sa Derivati di profaramci di (e)-n-metil-n-((3-metilbenzofuran-2-il)metil -3-(7-osso-5,6,7,8-tetraidro-1,8-naftiridin-3-il)acrilammide
US9136173B2 (en) 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
US9484260B2 (en) 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US8779555B2 (en) * 2012-12-06 2014-07-15 Taiwan Semiconductor Manufacturing Co., Ltd. Partial SOI on power device for breakdown voltage improvement
US9698024B2 (en) 2012-12-06 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Partial SOI on power device for breakdown voltage improvement
JPWO2014125565A1 (ja) * 2013-02-12 2017-02-02 トヨタ自動車株式会社 半導体装置とその製造方法
US9466536B2 (en) 2013-03-27 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator integrated circuit with back side gate
US8748245B1 (en) 2013-03-27 2014-06-10 Io Semiconductor, Inc. Semiconductor-on-insulator integrated circuit with interconnect below the insulator
US9478507B2 (en) 2013-03-27 2016-10-25 Qualcomm Incorporated Integrated circuit assembly with faraday cage
WO2015037166A1 (ja) * 2013-09-11 2015-03-19 パナソニックＩｐマネジメント株式会社 半導体装置
US9219185B2 (en) 2013-12-19 2015-12-22 Excelitas Technologies Singapore Pte. Ltd CMOS integrated method for the fabrication of thermopile pixel with umbrella absorber on semiconductor substrate
US9373772B2 (en) 2014-01-15 2016-06-21 Excelitas Technologies Singapore Pte. Ltd. CMOS integrated method for the release of thermopile pixel on a substrate by using anisotropic and isotropic etching
US9324760B2 (en) * 2014-01-21 2016-04-26 Excelitas Technologies Singapore Pte. Ltd CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions
EP3422415B1 (de) * 2014-02-28 2023-08-02 LFoundry S.r.l. Halbleiterbauelement mit einem lateral diffundierten mos transistor
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
US9385041B2 (en) 2014-08-26 2016-07-05 Semiconductor Components Industries, Llc Method for insulating singulated electronic die
BR112017009843A2 (pt) * 2014-11-13 2018-03-13 Qualcomm Inc semicondutor sobre isolante com topologia de tensão de lado posterior
US11342189B2 (en) 2015-09-17 2022-05-24 Semiconductor Components Industries, Llc Semiconductor packages with die including cavities and related methods
US9893058B2 (en) * 2015-09-17 2018-02-13 Semiconductor Components Industries, Llc Method of manufacturing a semiconductor device having reduced on-state resistance and structure
US9899527B2 (en) * 2015-12-31 2018-02-20 Globalfoundries Singapore Pte. Ltd. Integrated circuits with gaps
BR122023021456A2 (pt) 2016-02-26 2024-02-20 Debiopharm International S.A. Uso de di-hidrogeno fosfato de {6- [(e)-3-{metil[(3-metil-1-benfofuran-2- iol)metil]amino)-3- oxopro-1-en-1-il]-2-oxo-3,4-di-hidro-1,8-naftiridin-1(2h)- il}metila para tratamento de osteomielite do pé diabético e composição farmacêutica
JP6658171B2 (ja) * 2016-03-22 2020-03-04 富士電機株式会社 半導体装置の製造方法
DE102016119799B4 (de) 2016-10-18 2020-08-06 Infineon Technologies Ag Integrierte schaltung, die einen vergrabenen hohlraum enthält, und herstellungsverfahren
CN106952876A (zh) * 2017-03-16 2017-07-14 浙江大学 一种金属叠层填沟槽阵列的碳化硅衬底结构
US11588024B2 (en) 2017-03-17 2023-02-21 Infineon Technologies Austria Ag High voltage blocking III-V semiconductor device
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
US10818551B2 (en) 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
CN109686332B (zh) * 2019-01-24 2021-04-30 合肥鑫晟光电科技有限公司 补偿模块及逻辑门电路、栅极驱动电路和显示装置
FI3923914T3 (fi) 2019-02-14 2023-04-27 Debiopharm Int Sa Afabisiiniformulaatio, menetelmä sen valmistamiseksi
MA56184A (fr) 2019-06-14 2022-04-20 Debiopharm Int Sa Afabicine pour utilisation dans le traitement d'infections bactériennes impliquant un biofilm
US11251152B2 (en) * 2020-03-12 2022-02-15 Diodes Incorporated Thinned semiconductor chip with edge support
US11705490B2 (en) * 2021-02-08 2023-07-18 Applied Materials, Inc. Graded doping in power devices
US11423204B1 (en) * 2021-04-14 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited System and method for back side signal routing
DE102021204293A1 (de) 2021-04-29 2022-11-03 Robert Bosch Gesellschaft mit beschränkter Haftung Vertikaler transistor und verfahren zum herstellen desselben
RU207482U1 (ru) * 2021-06-24 2021-10-29 Акционерное общество "Микрон" (АО "Микрон") Кремниевая коммутационная плата для многокристальных интегральных модулей
US12543333B2 (en) * 2022-05-13 2026-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Insulated-gate bipolar transistor (IGBT) device with improved thermal conductivity
US12376333B2 (en) 2022-05-13 2025-07-29 Semiconductor Components Industries, Llc Configurable low ohmic power circuits

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439712A1 (de) 1964-08-08 1968-11-28 Telefunken Patent Verfahren zur Herstellung isolierter einkristalliner Bereiche mit geringer Nebenschlusskapazitaet im Halbleiterkoerper einer mikrominiaturisierten Schaltungsanordnung auf Festkoerperbasis
JPS5287988A (en) * 1976-01-19 1977-07-22 Hitachi Ltd High dielectric strength semiconductor device
JPS5289473A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Transistor
US5343067A (en) 1987-02-26 1994-08-30 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5241210A (en) 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5164218A (en) 1989-05-12 1992-11-17 Nippon Soken, Inc. Semiconductor device and a method for producing the same
JPH05129423A (ja) * 1991-10-30 1993-05-25 Rohm Co Ltd 半導体装置及びその製造方法
JPH0645340A (ja) * 1991-11-12 1994-02-18 Rohm Co Ltd 半導体装置及びその製造方法
IT1254799B (it) 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
US6008126A (en) 1992-04-08 1999-12-28 Elm Technology Corporation Membrane dielectric isolation IC fabrication
RU2022399C1 (ru) * 1992-07-10 1994-10-30 Игорь Николаевич Клопов Способ изготовления мощных полупроводниковых приборов
JPH06151573A (ja) 1992-11-06 1994-05-31 Hitachi Ltd 半導体集積回路装置
US6040617A (en) * 1992-12-22 2000-03-21 Stmicroelectronics, Inc. Structure to provide junction breakdown stability for deep trench devices
GB9305448D0 (en) * 1993-03-17 1993-05-05 British Tech Group Semiconductor structure and method of manufacturing same
US5373183A (en) 1993-04-28 1994-12-13 Harris Corporation Integrated circuit with improved reverse bias breakdown
US5468982A (en) 1994-06-03 1995-11-21 Siliconix Incorporated Trenched DMOS transistor with channel block at cell trench corners
US5631491A (en) 1994-09-27 1997-05-20 Fuji Electric Co., Ltd. Lateral semiconductor device and method of fixing potential of the same
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process
JPH08167617A (ja) * 1994-12-14 1996-06-25 Sanyo Electric Co Ltd 高耐圧半導体装置
US5567978A (en) * 1995-02-03 1996-10-22 Harris Corporation High voltage, junction isolation semiconductor device having dual conductivity tape buried regions and its process of manufacture
US6734496B2 (en) * 1996-01-22 2004-05-11 Fuji Electric Co., Ltd. Semiconductor device
JPH09293886A (ja) * 1996-04-26 1997-11-11 New Japan Radio Co Ltd 半導体装置及びその製造方法
JPH1050718A (ja) * 1996-08-07 1998-02-20 Hitachi Ltd 半導体装置の製造方法
US5895972A (en) 1996-12-31 1999-04-20 Intel Corporation Method and apparatus for cooling the backside of a semiconductor device using an infrared transparent heat slug
GB2321336B (en) * 1997-01-15 2001-07-25 Univ Warwick Gas-sensing semiconductor devices
DE19811604B4 (de) * 1997-03-18 2007-07-12 Kabushiki Kaisha Toshiba, Kawasaki Halbleitervorrichtung
US6074890A (en) * 1998-01-08 2000-06-13 Rockwell Science Center, Llc Method of fabricating suspended single crystal silicon micro electro mechanical system (MEMS) devices
US6104062A (en) * 1998-06-30 2000-08-15 Intersil Corporation Semiconductor device having reduced effective substrate resistivity and associated methods
US6444487B1 (en) * 1998-07-28 2002-09-03 Rosemount Aerospace Inc. Flexible silicon strain gage
US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
JP2002535840A (ja) 1999-01-12 2002-10-22 オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト メサ形縁端部を備えるパワー半導体素子
CN1233041C (zh) * 2000-09-21 2005-12-21 剑桥半导体有限公司 半导体器件及其制作方法

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