ATE363766T1 - Schmitt-trigger-schaltung in soi-technik - Google Patents

Schmitt-trigger-schaltung in soi-technik

Info

Publication number
ATE363766T1
ATE363766T1 AT04725457T AT04725457T ATE363766T1 AT E363766 T1 ATE363766 T1 AT E363766T1 AT 04725457 T AT04725457 T AT 04725457T AT 04725457 T AT04725457 T AT 04725457T AT E363766 T1 ATE363766 T1 AT E363766T1
Authority
AT
Austria
Prior art keywords
inverter stage
circuit
inverter
output
trigger circuit
Prior art date
Application number
AT04725457T
Other languages
English (en)
Inventor
Thierry Favard
Original Assignee
Soisic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soisic filed Critical Soisic
Application granted granted Critical
Publication of ATE363766T1 publication Critical patent/ATE363766T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/3565Bistables with hysteresis, e.g. Schmitt trigger

Landscapes

  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Electrotherapy Devices (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Toys (AREA)
  • Manipulation Of Pulses (AREA)
AT04725457T 2003-04-02 2004-04-02 Schmitt-trigger-schaltung in soi-technik ATE363766T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0304088A FR2853474B1 (fr) 2003-04-02 2003-04-02 Circuit trigger de schmitt en soi

Publications (1)

Publication Number Publication Date
ATE363766T1 true ATE363766T1 (de) 2007-06-15

Family

ID=32982178

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04725457T ATE363766T1 (de) 2003-04-02 2004-04-02 Schmitt-trigger-schaltung in soi-technik

Country Status (6)

Country Link
US (1) US20060232313A1 (de)
EP (1) EP1611681B1 (de)
AT (1) ATE363766T1 (de)
DE (1) DE602004006734T2 (de)
FR (1) FR2853474B1 (de)
WO (1) WO2004088844A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005341354A (ja) * 2004-05-28 2005-12-08 Nec Electronics Corp 半導体集積回路
JP4981267B2 (ja) * 2005-05-11 2012-07-18 ルネサスエレクトロニクス株式会社 過熱検出回路
TW200805882A (en) * 2005-12-07 2008-01-16 Dsm Solutions Inc Method of producing and operating a low power junction field effect transistor
US20090237135A1 (en) * 2008-03-21 2009-09-24 Ravindraraj Ramaraju Schmitt trigger having variable hysteresis and method therefor
CN102035511B (zh) * 2010-11-02 2013-04-24 杭州士兰微电子股份有限公司 一种用于高压集成电路的延时电路
FR2996386A1 (fr) * 2012-10-01 2014-04-04 St Microelectronics Sa Comparateur integre a hysteresis, en particulier realise dans une technologie fd soi
US8975952B2 (en) 2012-11-13 2015-03-10 Honeywell International Inc. CMOS logic circuit using passive internal body tie bias
CN103066955B (zh) * 2012-12-17 2016-01-20 广州慧智微电子有限公司 一种用于绝缘硅工艺的小尺寸、快速翻转施密特触发器电路
EP2779450B1 (de) * 2013-03-14 2016-07-20 Rohm Co., Ltd. Verfahren und vorrichtung zur erzeugung eines schwingungssignals
US9385708B2 (en) * 2014-03-17 2016-07-05 Stmicroelectronics International N.V. Methodology to avoid gate stress for low voltage devices in FDSOI technology
US9306550B2 (en) * 2014-03-17 2016-04-05 Stmicroelectronics International N.V. Schmitt trigger in FDSOI technology
US9705482B1 (en) * 2016-06-24 2017-07-11 Peregrine Semiconductor Corporation High voltage input buffer
US10748890B2 (en) * 2017-03-31 2020-08-18 Stmicroelectronics International N.V. Negative voltage tolerant IO circuitry for IO pad

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608344A (en) * 1995-10-19 1997-03-04 Sgs-Thomson Microelectronics, Inc. Comparator circuit with hysteresis
US6239649B1 (en) * 1999-04-20 2001-05-29 International Business Machines Corporation Switched body SOI (silicon on insulator) circuits and fabrication method therefor
US6433602B1 (en) * 2000-08-30 2002-08-13 Lattice Semiconductor Corp. High speed Schmitt Trigger with low supply voltage
US6441663B1 (en) * 2000-11-02 2002-08-27 International Business Machines Corporation SOI CMOS Schmitt trigger circuits with controllable hysteresis
US6566926B1 (en) * 2002-06-25 2003-05-20 Intel Corporation Hysteretic self-biased amplifier
US6833749B2 (en) * 2002-12-09 2004-12-21 Honeywell International Inc. System and method for obtaining hysteresis through body substrate control

Also Published As

Publication number Publication date
FR2853474A1 (fr) 2004-10-08
US20060232313A1 (en) 2006-10-19
DE602004006734T2 (de) 2008-01-31
WO2004088844A1 (en) 2004-10-14
DE602004006734D1 (de) 2007-07-12
EP1611681B1 (de) 2007-05-30
FR2853474B1 (fr) 2005-07-08
EP1611681A1 (de) 2006-01-04

Similar Documents

Publication Publication Date Title
KR970013707A (ko) 레벨 시프트 반도체 장치
TW200501558A (en) Differential amplifier operable in wide range
EP2107680A3 (de) Single-Event-Effect-tolerante, SOI-basierte Daten-Latch-Vorrichtung
KR930020852A (ko) 반도체 집적 회로 장치
KR970705231A (ko) 전원 노이즈 아이솔레이션을 갖는 전압 제어 지연회로를 갖춘 전압 제어 발진기(Voltage controlled oscillator including voltage controlled delay circuit with power supply noise isolation)
TW200737699A (en) Voltage level shift circuit and semiconductor integrated circuit
FR2853474B1 (fr) Circuit trigger de schmitt en soi
US7760033B2 (en) Ring oscillators for NMOS and PMOS source to drain leakage and gate leakage
JP3613779B2 (ja) 発振回路
KR920015365A (ko) 입출력 버퍼회로
KR960039349A (ko) 반도체 집적회로
KR970063902A (ko) 구동 회로
KR950007285A (ko) 플립플롭형 증폭 회로
KR890004501A (ko) 대칭 증폭기 부하회로 및 논리 레벨 조정용 증폭기
KR910002127A (ko) 전원절환회로
US6753707B2 (en) Delay circuit and semiconductor device using the same
TW200742258A (en) Clock signal generating circuit
KR890016665A (ko) 바이플라 트랜지스터와 mosfet를 갖는 반도체집적회로
US6724225B2 (en) Logic circuit for true and complement signal generator
JPH10242834A (ja) Cmos回路
KR970023374A (ko) 반도체 집적회로장치 및 소진폭 신호 수신 방법
JP2001068978A (ja) レベルシフタ回路
KR940004833A (ko) 씨엠오에스(cmos)회로의 래치업 저감출력 드라이버 및 래치업 저감방법
JP2002026715A (ja) レベルシフト回路
US6476659B1 (en) Voltage level shifter and phase splitter

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties