ATE364830T1 - Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellen - Google Patents

Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellen

Info

Publication number
ATE364830T1
ATE364830T1 AT04742088T AT04742088T ATE364830T1 AT E364830 T1 ATE364830 T1 AT E364830T1 AT 04742088 T AT04742088 T AT 04742088T AT 04742088 T AT04742088 T AT 04742088T AT E364830 T1 ATE364830 T1 AT E364830T1
Authority
AT
Austria
Prior art keywords
texture
photovoltaic cells
optical method
morphologies
inventive method
Prior art date
Application number
AT04742088T
Other languages
English (en)
Inventor
Luezas Carlos Enrique Zaldo
Martin Jose Maria Albella
Garcia Eduardo Fornies
Original Assignee
Consejo Superior Investigacion
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior Investigacion filed Critical Consejo Superior Investigacion
Application granted granted Critical
Publication of ATE364830T1 publication Critical patent/ATE364830T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4735—Solid samples, e.g. paper, glass

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Silicon Compounds (AREA)
AT04742088T 2003-07-15 2004-07-14 Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellen ATE364830T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES200301666A ES2235608B1 (es) 2003-07-15 2003-07-15 Metodo optico y dispositivo para la cuantificacion de la textura en celulas fotovoltaicas.

Publications (1)

Publication Number Publication Date
ATE364830T1 true ATE364830T1 (de) 2007-07-15

Family

ID=34072908

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04742088T ATE364830T1 (de) 2003-07-15 2004-07-14 Optisches verfahren und einrichtung zur texturquantifizierung photovoltaischer zellen

Country Status (8)

Country Link
US (1) US20060268283A1 (de)
EP (1) EP1662227B1 (de)
JP (1) JP2007528997A (de)
CN (1) CN100419377C (de)
AT (1) ATE364830T1 (de)
DE (1) DE602004007014T2 (de)
ES (1) ES2235608B1 (de)
WO (1) WO2005008175A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7742171B2 (en) * 2007-08-06 2010-06-22 Ci Systems Ltd. Reflectivity/emissivity measurement probe insensitive to variations in probe-to-target distance
US8378661B1 (en) * 2008-05-29 2013-02-19 Alpha-Omega Power Technologies, Ltd.Co. Solar simulator
GB0816047D0 (en) * 2008-09-04 2008-10-08 Rolls Royce Plc Crystallographic orientation measurement
DE102009044458B4 (de) * 2009-11-06 2021-03-04 Hanwha Q.CELLS GmbH Analyseverfahren zum Analysieren eines Halbleiterwafers
DE102010011056A1 (de) 2010-03-11 2011-09-15 Jörg Bischoff Verfahren und Anordnung zur quantitativen, optischen Messung der Oberflächentextur
DE102010029133A1 (de) * 2010-05-19 2011-11-24 Robert Bosch Gmbh Verfahren und Vorrichtung zur Charakterisierung von pyramidalen Oberflächenstrukturen auf einem Substrat
JP2013002900A (ja) * 2011-06-15 2013-01-07 Mitsubishi Electric Corp エリプソメーター装置および単結晶シリコンに形成された反射防止膜の測定方法
DE102012012156B4 (de) 2012-06-19 2014-05-15 Audiodev Gmbh Verfahren zum optischen vermessen von pyramiden auf texturierten monokristallinen siliziumwafern

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
JPS58111743A (ja) * 1981-12-26 1983-07-02 Toshiba Corp ボンディング性評価方法
JPS58140609A (ja) * 1982-02-17 1983-08-20 Toshiba Corp 表面状態評価装置
JPH0739946B2 (ja) * 1987-08-26 1995-05-01 株式会社豊田中央研究所 表面状態検査装置
US6118525A (en) * 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
WO1997046865A1 (en) * 1996-06-04 1997-12-11 Tencor Instruments Optical scanning system for surface inspection
JP3257413B2 (ja) * 1996-09-10 2002-02-18 松下電器産業株式会社 レーザ加工装置及びレーザ加工方法
TW482898B (en) * 1996-12-04 2002-04-11 Ade Optical Syst Corp A surface inspection system and method for distinguishing between particle defects and pit defects on a surface of a workpiece.
DE19811878C2 (de) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
SE514309C2 (sv) * 1999-05-28 2001-02-05 Ericsson Telefon Ab L M Förfarande för att bestämma ytstruktur
WO2002079760A2 (en) * 2001-03-30 2002-10-10 Therma-Wave, Inc. Polarimetric scatterometer for critical dimension measurements of periodic structures
WO2003054475A2 (en) * 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems

Also Published As

Publication number Publication date
EP1662227A1 (de) 2006-05-31
WO2005008175A1 (es) 2005-01-27
DE602004007014D1 (de) 2007-07-26
ES2235608A1 (es) 2005-07-01
ES2235608B1 (es) 2006-11-01
CN100419377C (zh) 2008-09-17
EP1662227B1 (de) 2007-06-13
JP2007528997A (ja) 2007-10-18
DE602004007014T2 (de) 2008-02-14
CN1871495A (zh) 2006-11-29
US20060268283A1 (en) 2006-11-30

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