ATE525500T1 - Verfahren zur herstellung von diamantsubstraten - Google Patents

Verfahren zur herstellung von diamantsubstraten

Info

Publication number
ATE525500T1
ATE525500T1 AT04744049T AT04744049T ATE525500T1 AT E525500 T1 ATE525500 T1 AT E525500T1 AT 04744049 T AT04744049 T AT 04744049T AT 04744049 T AT04744049 T AT 04744049T AT E525500 T1 ATE525500 T1 AT E525500T1
Authority
AT
Austria
Prior art keywords
diamond
exposed
further processing
support layer
plates
Prior art date
Application number
AT04744049T
Other languages
English (en)
Inventor
Christopher Wort
Daniel Twitchen
Geoffrey Alan Scarsbrook
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Priority claimed from PCT/IB2004/002391 external-priority patent/WO2005010245A1/en
Application granted granted Critical
Publication of ATE525500T1 publication Critical patent/ATE525500T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
AT04744049T 2003-07-30 2004-07-26 Verfahren zur herstellung von diamantsubstraten ATE525500T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0317854.8A GB0317854D0 (en) 2003-07-30 2003-07-30 Method of manufacturing diamond substrates
US49273603P 2003-08-06 2003-08-06
PCT/IB2004/002391 WO2005010245A1 (en) 2003-07-30 2004-07-26 Method of manufacturing diamond substrates

Publications (1)

Publication Number Publication Date
ATE525500T1 true ATE525500T1 (de) 2011-10-15

Family

ID=27799491

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04744049T ATE525500T1 (de) 2003-07-30 2004-07-26 Verfahren zur herstellung von diamantsubstraten

Country Status (4)

Country Link
US (1) US7837793B2 (de)
JP (1) JP4938449B2 (de)
AT (1) ATE525500T1 (de)
GB (1) GB0317854D0 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0317854D0 (en) * 2003-07-30 2003-09-03 Element Six Ltd Method of manufacturing diamond substrates
JP2006096643A (ja) * 2004-09-30 2006-04-13 Sumitomo Electric Ind Ltd ダイヤモンド基板及びその製造方法
JP4873368B2 (ja) * 2007-01-24 2012-02-08 住友電気工業株式会社 ダイヤモンド基板
US20100011146A1 (en) * 2008-07-11 2010-01-14 Lsi Corporation Conveying Information With a PCI Express Tag Field
GB201107736D0 (en) * 2011-05-10 2011-06-22 Element Six Holdings N V Composite diamond assemblies
US9062505B2 (en) * 2011-06-22 2015-06-23 Us Synthetic Corporation Method for laser cutting polycrystalline diamond structures
US8863864B1 (en) 2011-05-26 2014-10-21 Us Synthetic Corporation Liquid-metal-embrittlement resistant superabrasive compact, and related drill bits and methods
US9297411B2 (en) 2011-05-26 2016-03-29 Us Synthetic Corporation Bearing assemblies, apparatuses, and motor assemblies using the same
US8950519B2 (en) 2011-05-26 2015-02-10 Us Synthetic Corporation Polycrystalline diamond compacts with partitioned substrate, polycrystalline diamond table, or both
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element
EP2870626B1 (de) 2012-07-03 2021-06-23 RFHIC Corporation Verbundwafer mit temporärem trägerwafer und halbleiter auf diamant-wafer und verfahren zu seiner herstellung
JP6248458B2 (ja) * 2013-08-05 2017-12-20 株式会社Sumco 貼り合わせウェーハの製造方法および貼り合わせウェーハ
GB201319117D0 (en) * 2013-10-30 2013-12-11 Element Six Technologies Us Corp Semiconductor device structures comprising polycrystalline CVD Diamond with improved near-substrate thermal conductivity
JP6450919B2 (ja) 2014-02-05 2019-01-16 アダマンド並木精密宝石株式会社 ダイヤモンド基板及びダイヤモンド基板の製造方法
GB201419809D0 (en) * 2014-11-07 2014-12-24 Element Six Technologies Ltd A method of fabricating plates of super-hard material and cutting techniques suitable for such a method
GB201516814D0 (en) * 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
TWI724342B (zh) * 2017-11-03 2021-04-11 新加坡商二Ａ科技有限公司 嵌入式單晶鑽石於多晶鑽石結構及其生長方法
EP3794631A4 (de) * 2018-05-18 2022-02-23 Board of Trustees of Michigan State University Verfahren zur herstellung grossflächiger diamantsubstrate
CN114150376B (zh) * 2021-10-14 2023-10-24 吉林大学 一种大尺寸单晶金刚石拼接生长方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642779A (en) * 1909-06-30 1997-07-01 Sumitomo Electric Industries, Ltd. Heat sink and a process for the production of the same
US5198070A (en) * 1988-04-28 1993-03-30 Jones Barbara L Joining diamond bodies
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
JP3666044B2 (ja) 1995-01-30 2005-06-29 住友電気工業株式会社 ダイヤモンド部品
US5652436A (en) * 1995-08-14 1997-07-29 Kobe Steel Usa Inc. Smooth diamond based mesa structures
EP0920363B1 (de) * 1996-07-30 2002-12-04 Drukker International B.V. Verfahren zur herstellung eines schneideinsatzes für schneidwerkzeug
JPH1074715A (ja) * 1996-08-16 1998-03-17 Kobe Steel Ltd 電子デバイス構造およびその製造方法
US5907768A (en) * 1996-08-16 1999-05-25 Kobe Steel Usa Inc. Methods for fabricating microelectronic structures including semiconductor islands
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
JP2000277405A (ja) * 1999-03-29 2000-10-06 Meidensha Corp 半導体素子の製造方法
JP2002110490A (ja) * 2000-09-28 2002-04-12 Kobe Steel Ltd 半導体装置用基板及びその製造方法
FR2826378B1 (fr) * 2001-06-22 2004-10-15 Commissariat Energie Atomique Structure composite a orientation cristalline uniforme et procede de controle de l'orientation cristalline d'une telle structure
US6562127B1 (en) * 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
GB0317854D0 (en) * 2003-07-30 2003-09-03 Element Six Ltd Method of manufacturing diamond substrates

Also Published As

Publication number Publication date
GB0317854D0 (en) 2003-09-03
US7837793B2 (en) 2010-11-23
JP4938449B2 (ja) 2012-05-23
JP2007500439A (ja) 2007-01-11
US20070034147A1 (en) 2007-02-15

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