ATE368241T1 - Resistzusammensetzung - Google Patents
ResistzusammensetzungInfo
- Publication number
- ATE368241T1 ATE368241T1 AT03004395T AT03004395T ATE368241T1 AT E368241 T1 ATE368241 T1 AT E368241T1 AT 03004395 T AT03004395 T AT 03004395T AT 03004395 T AT03004395 T AT 03004395T AT E368241 T1 ATE368241 T1 AT E368241T1
- Authority
- AT
- Austria
- Prior art keywords
- group
- acidic
- blocked
- acidic group
- fluoropolymer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002057342A JP4010160B2 (ja) | 2002-03-04 | 2002-03-04 | レジスト組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE368241T1 true ATE368241T1 (de) | 2007-08-15 |
Family
ID=27751036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03004395T ATE368241T1 (de) | 2002-03-04 | 2003-03-03 | Resistzusammensetzung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6815146B2 (de) |
| EP (1) | EP1343047B1 (de) |
| JP (1) | JP4010160B2 (de) |
| KR (1) | KR20040002451A (de) |
| CN (1) | CN100422853C (de) |
| AT (1) | ATE368241T1 (de) |
| DE (1) | DE60315085T2 (de) |
| TW (1) | TWI300882B (de) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2001274579A1 (en) * | 2000-06-21 | 2002-01-02 | Asahi Glass Company, Limited | Resist composition |
| JP2004004561A (ja) * | 2002-02-19 | 2004-01-08 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
| JP2003330196A (ja) * | 2002-03-05 | 2003-11-19 | Jsr Corp | 感放射線性樹脂組成物 |
| JP2004004703A (ja) * | 2002-04-03 | 2004-01-08 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
| US6866983B2 (en) * | 2002-04-05 | 2005-03-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| JP3856122B2 (ja) * | 2002-04-05 | 2006-12-13 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP4186054B2 (ja) * | 2002-04-05 | 2008-11-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| AU2003257656A1 (en) * | 2002-08-21 | 2004-03-11 | Asahi Glass Company, Limited | Fluorine compounds, fluoropolymers, and process for production thereof |
| JPWO2004024787A1 (ja) * | 2002-09-13 | 2006-01-05 | ダイキン工業株式会社 | レジスト用含フッ素重合体の製造方法 |
| KR20050071666A (ko) * | 2002-11-07 | 2005-07-07 | 아사히 가라스 가부시키가이샤 | 레지스트 조성물 |
| KR20050084631A (ko) * | 2002-11-07 | 2005-08-26 | 아사히 가라스 가부시키가이샤 | 함불소 폴리머 |
| JP2005060664A (ja) * | 2003-07-31 | 2005-03-10 | Asahi Glass Co Ltd | 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物 |
| JP2005097531A (ja) * | 2003-08-21 | 2005-04-14 | Asahi Glass Co Ltd | 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物 |
| WO2005042453A1 (ja) * | 2003-10-31 | 2005-05-12 | Asahi Glass Company, Limited | 含フッ素化合物、含フッ素ポリマーとその製造方法 |
| JP2005162861A (ja) * | 2003-12-02 | 2005-06-23 | Asahi Glass Co Ltd | 含フッ素ポリマー |
| JP2005173463A (ja) * | 2003-12-15 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト組成物およびレジストパターン形成方法 |
| US7256873B2 (en) * | 2004-01-28 | 2007-08-14 | Asml Netherlands B.V. | Enhanced lithographic resolution through double exposure |
| JP4568278B2 (ja) * | 2004-03-08 | 2010-10-27 | 三菱レイヨン株式会社 | レジスト材料、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物 |
| JP4407358B2 (ja) * | 2004-04-14 | 2010-02-03 | 旭硝子株式会社 | 含フッ素ポリマーおよびレジスト組成物 |
| CN1946751B (zh) | 2004-04-27 | 2010-12-08 | 东京应化工业株式会社 | 用于形成液浸曝光工艺用光刻胶保护膜的材料、以及使用该保护膜的光刻胶图案形成方法 |
| WO2005108446A1 (ja) * | 2004-05-07 | 2005-11-17 | Asahi Glass Company, Limited | 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物 |
| JPWO2006011427A1 (ja) * | 2004-07-30 | 2008-05-01 | 旭硝子株式会社 | 含フッ素化合物、含フッ素ポリマー、レジスト組成物、およびレジスト保護膜組成物 |
| JP4368267B2 (ja) | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
| US20060249332A1 (en) * | 2005-05-06 | 2006-11-09 | General Electric Company | Oil supply and scavenge system |
| WO2006132287A1 (ja) * | 2005-06-08 | 2006-12-14 | Asahi Glass Company, Limited | 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物 |
| JP4677857B2 (ja) * | 2005-08-23 | 2011-04-27 | ヤマハ株式会社 | 楽器用部材または楽器とその製造方法 |
| CN101646696B (zh) * | 2007-03-30 | 2012-07-04 | 旭硝子株式会社 | 新的含氟化合物、含氟聚合物及其制造方法 |
| JP5238399B2 (ja) * | 2008-08-04 | 2013-07-17 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物、化合物 |
| CN107848947B (zh) * | 2015-07-23 | 2025-06-20 | Dic株式会社 | 含氟化合物、活性聚合引发剂、含氟聚合物、含氟聚合物的制造方法及抗蚀剂组合物 |
| US10529552B2 (en) * | 2017-11-29 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing a semiconductor device and a coating material |
| JP6860032B2 (ja) * | 2019-04-04 | 2021-04-14 | ダイキン工業株式会社 | パーフルオロアルキン化合物の製造方法 |
| KR20240151730A (ko) * | 2022-02-21 | 2024-10-18 | 에이지씨 가부시키가이샤 | 함불소 중합체, 조성물, 방습 코트제 및 물품 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0459804A (ja) * | 1990-06-29 | 1992-02-26 | Asahi Glass Co Ltd | 溶融成形性に優れた樹脂 |
| JP3005040B2 (ja) * | 1990-11-22 | 2000-01-31 | 旭硝子株式会社 | コーティング用樹脂組成物 |
| JP3025799B2 (ja) * | 1990-11-22 | 2000-03-27 | 旭硝子株式会社 | 紫外光透過性に優れた重合体およびその製法 |
| AU6056099A (en) * | 1998-09-23 | 2000-04-10 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| WO2000067072A1 (en) | 1999-05-04 | 2000-11-09 | E.I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
| US6468712B1 (en) * | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
| JP4923376B2 (ja) | 2000-04-04 | 2012-04-25 | ダイキン工業株式会社 | 酸反応性基を有する新規なフッ素ポリマーおよびそれを用いた化学増幅型フォトレジスト組成物 |
| WO2002064648A1 (en) | 2001-02-09 | 2002-08-22 | Asahi Glass Company, Limited | Fluorine-containing compounds and polymers and processes for producing the same |
| DE60223654T2 (de) * | 2001-02-09 | 2008-10-30 | Asahi Glass Co., Ltd. | Resistzusammensetzung |
-
2002
- 2002-03-04 JP JP2002057342A patent/JP4010160B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-03 EP EP03004395A patent/EP1343047B1/de not_active Expired - Lifetime
- 2003-03-03 KR KR1020030013130A patent/KR20040002451A/ko not_active Ceased
- 2003-03-03 DE DE60315085T patent/DE60315085T2/de not_active Expired - Fee Related
- 2003-03-03 TW TW092104432A patent/TWI300882B/zh not_active IP Right Cessation
- 2003-03-03 US US10/376,243 patent/US6815146B2/en not_active Expired - Fee Related
- 2003-03-03 AT AT03004395T patent/ATE368241T1/de not_active IP Right Cessation
- 2003-03-03 CN CNB031070582A patent/CN100422853C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60315085T2 (de) | 2008-04-10 |
| US20040013970A1 (en) | 2004-01-22 |
| CN1442753A (zh) | 2003-09-17 |
| DE60315085D1 (de) | 2007-09-06 |
| JP4010160B2 (ja) | 2007-11-21 |
| EP1343047A3 (de) | 2004-01-02 |
| KR20040002451A (ko) | 2004-01-07 |
| CN100422853C (zh) | 2008-10-01 |
| EP1343047B1 (de) | 2007-07-25 |
| EP1343047A2 (de) | 2003-09-10 |
| TW200304047A (en) | 2003-09-16 |
| TWI300882B (en) | 2008-09-11 |
| US6815146B2 (en) | 2004-11-09 |
| JP2003255540A (ja) | 2003-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |