ATE369624T1 - METHOD FOR HIGH-TEMPERATURE SHORT-TERM HARDENING OF LOW-DIELECTRICITY MATERIALS USING A FAST THERMAL PROCESS - Google Patents

METHOD FOR HIGH-TEMPERATURE SHORT-TERM HARDENING OF LOW-DIELECTRICITY MATERIALS USING A FAST THERMAL PROCESS

Info

Publication number
ATE369624T1
ATE369624T1 AT02715628T AT02715628T ATE369624T1 AT E369624 T1 ATE369624 T1 AT E369624T1 AT 02715628 T AT02715628 T AT 02715628T AT 02715628 T AT02715628 T AT 02715628T AT E369624 T1 ATE369624 T1 AT E369624T1
Authority
AT
Austria
Prior art keywords
low
temperature
curing
dielectricity
materials
Prior art date
Application number
AT02715628T
Other languages
German (de)
Inventor
Rahul Sharangpani
Sing-Pin Tay
Original Assignee
Mattson Thermal Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Thermal Products Inc filed Critical Mattson Thermal Products Inc
Application granted granted Critical
Publication of ATE369624T1 publication Critical patent/ATE369624T1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method for curing low k dielectric materials uses very short, relatively high temperature cycles instead of the conventionally used (lower temperature/longer time) thermal cycles. A substrate, such as a semiconductor wafer, coated with a layer of coating material is heated to an elevated temperature at a heating rate of greater than about 20° C. per second. Once the coating material has been converted to a low dielectric constant material with desired properties, the coated substrate is cooled. Alternatively, spike heating raises and promptly lowers the temperature of the coated substrate to effect curing in one or a series of spike heating steps. The method allows for a thinner refractory barrier metal layer thickness to prevent copper diffusion, and uses shorter curing times resulting in higher throughput.
AT02715628T 2001-02-20 2002-01-24 METHOD FOR HIGH-TEMPERATURE SHORT-TERM HARDENING OF LOW-DIELECTRICITY MATERIALS USING A FAST THERMAL PROCESS ATE369624T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/789,062 US6303524B1 (en) 2001-02-20 2001-02-20 High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques

Publications (1)

Publication Number Publication Date
ATE369624T1 true ATE369624T1 (en) 2007-08-15

Family

ID=25146475

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02715628T ATE369624T1 (en) 2001-02-20 2002-01-24 METHOD FOR HIGH-TEMPERATURE SHORT-TERM HARDENING OF LOW-DIELECTRICITY MATERIALS USING A FAST THERMAL PROCESS

Country Status (7)

Country Link
US (1) US6303524B1 (en)
EP (1) EP1364397B1 (en)
KR (1) KR20030074838A (en)
AT (1) ATE369624T1 (en)
DE (1) DE60221649T2 (en)
TW (1) TW536759B (en)
WO (1) WO2002067314A2 (en)

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US20080254619A1 (en) * 2007-04-14 2008-10-16 Tsang-Jung Lin Method of fabricating a semiconductor device
US20090075491A1 (en) * 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
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US7977256B2 (en) 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
US20090226694A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US7858533B2 (en) * 2008-03-06 2010-12-28 Tokyo Electron Limited Method for curing a porous low dielectric constant dielectric film
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US20100183851A1 (en) * 2009-01-21 2010-07-22 Yi Cao Photoresist Image-forming Process Using Double Patterning
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US8426763B2 (en) * 2009-04-23 2013-04-23 Micron Technology, Inc. Rapid thermal processing systems and methods for treating microelectronic substrates
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JP5663959B2 (en) * 2010-05-28 2015-02-04 Jsr株式会社 Insulating pattern forming method and insulating pattern forming material for damascene process
US20140127901A1 (en) * 2012-11-08 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k damage free integration scheme for copper interconnects
US12441879B2 (en) 2019-08-21 2025-10-14 Ticona Llc Polymer composition for laser direct structuring
US11258184B2 (en) 2019-08-21 2022-02-22 Ticona Llc Antenna system including a polymer composition having a low dissipation factor
US11637365B2 (en) 2019-08-21 2023-04-25 Ticona Llc Polymer composition for use in an antenna system
US11912817B2 (en) 2019-09-10 2024-02-27 Ticona Llc Polymer composition for laser direct structuring
US12294185B2 (en) 2019-09-10 2025-05-06 Ticona Llc Electrical connector formed from a polymer composition having a low dielectric constant and dissipation factor
US12209164B2 (en) 2019-09-10 2025-01-28 Ticona Llc Polymer composition and film for use in 5G applications
US11555113B2 (en) 2019-09-10 2023-01-17 Ticona Llc Liquid crystalline polymer composition
US12142820B2 (en) 2019-09-10 2024-11-12 Ticona Llc 5G system containing a polymer composition
US11646760B2 (en) 2019-09-23 2023-05-09 Ticona Llc RF filter for use at 5G frequencies
US11917753B2 (en) 2019-09-23 2024-02-27 Ticona Llc Circuit board for use at 5G frequencies
US10985071B1 (en) * 2019-10-30 2021-04-20 United Microelectronics Corp. Gate oxide forming process
US11721888B2 (en) 2019-11-11 2023-08-08 Ticona Llc Antenna cover including a polymer composition having a low dielectric constant and dissipation factor
CN115700014A (en) 2020-02-26 2023-02-03 提克纳有限责任公司 Circuit structure
RU2752125C1 (en) * 2020-11-20 2021-07-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Method for manufacturing semiconductor device
US11728559B2 (en) 2021-02-18 2023-08-15 Ticona Llc Polymer composition for use in an antenna system

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Also Published As

Publication number Publication date
EP1364397B1 (en) 2007-08-08
KR20030074838A (en) 2003-09-19
EP1364397A2 (en) 2003-11-26
WO2002067314A3 (en) 2002-12-05
DE60221649T2 (en) 2008-05-21
US6303524B1 (en) 2001-10-16
DE60221649D1 (en) 2007-09-20
WO2002067314A2 (en) 2002-08-29
TW536759B (en) 2003-06-11

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