ATE369624T1 - Verfahren zur hochtemperatur- kurzzeithärtung von materialen mit niedrieger dielektrizitätskonstante unter verwendung eines schnellen thermischen prozesses - Google Patents
Verfahren zur hochtemperatur- kurzzeithärtung von materialen mit niedrieger dielektrizitätskonstante unter verwendung eines schnellen thermischen prozessesInfo
- Publication number
- ATE369624T1 ATE369624T1 AT02715628T AT02715628T ATE369624T1 AT E369624 T1 ATE369624 T1 AT E369624T1 AT 02715628 T AT02715628 T AT 02715628T AT 02715628 T AT02715628 T AT 02715628T AT E369624 T1 ATE369624 T1 AT E369624T1
- Authority
- AT
- Austria
- Prior art keywords
- low
- temperature
- curing
- dielectricity
- materials
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/08—Planarisation of organic insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Inorganic Insulating Materials (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/789,062 US6303524B1 (en) | 2001-02-20 | 2001-02-20 | High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE369624T1 true ATE369624T1 (de) | 2007-08-15 |
Family
ID=25146475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02715628T ATE369624T1 (de) | 2001-02-20 | 2002-01-24 | Verfahren zur hochtemperatur- kurzzeithärtung von materialen mit niedrieger dielektrizitätskonstante unter verwendung eines schnellen thermischen prozesses |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6303524B1 (de) |
| EP (1) | EP1364397B1 (de) |
| KR (1) | KR20030074838A (de) |
| AT (1) | ATE369624T1 (de) |
| DE (1) | DE60221649T2 (de) |
| TW (1) | TW536759B (de) |
| WO (1) | WO2002067314A2 (de) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10296448T5 (de) * | 2001-03-20 | 2004-04-15 | Mattson Technology Inc., Fremont | Verfahren zum Abscheiden einer Schicht mit einer verhältnismässig hohen Dielektrizitätskonstante auf ein Substrat |
| US6667249B1 (en) * | 2002-03-20 | 2003-12-23 | Taiwan Semiconductor Manufacturing Company | Minimizing coating defects in low dielectric constant films |
| WO2003089682A1 (en) * | 2002-04-19 | 2003-10-30 | Mattson Technology, Inc. | System for depositing a film onto a substrate using a low vapor pressure gas precursor |
| US6784544B1 (en) * | 2002-06-25 | 2004-08-31 | Micron Technology, Inc. | Semiconductor component having conductors with wire bondable metalization layers |
| US6812135B2 (en) * | 2002-10-30 | 2004-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd | Adhesion enhancement between CVD dielectric and spin-on low-k silicate films |
| US20040099283A1 (en) * | 2002-11-26 | 2004-05-27 | Axcelis Technologies, Inc. | Drying process for low-k dielectric films |
| US7622399B2 (en) * | 2003-09-23 | 2009-11-24 | Silecs Oy | Method of forming low-k dielectrics using a rapid curing process |
| US7018941B2 (en) | 2004-04-21 | 2006-03-28 | Applied Materials, Inc. | Post treatment of low k dielectric films |
| US20060016786A1 (en) * | 2004-07-26 | 2006-01-26 | Bing-Yue Tsui | Method and apparatus for removing SiC or low k material film |
| US7622378B2 (en) * | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
| US8956457B2 (en) * | 2006-09-08 | 2015-02-17 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
| US20080254619A1 (en) * | 2007-04-14 | 2008-10-16 | Tsang-Jung Lin | Method of fabricating a semiconductor device |
| US20090075491A1 (en) * | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
| US7858533B2 (en) * | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
| US20090226695A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | Method for treating a dielectric film with infrared radiation |
| US20090226694A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING |
| US7977256B2 (en) | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
| US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
| US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
| US20100040838A1 (en) * | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
| US20100065758A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
| US8895942B2 (en) * | 2008-09-16 | 2014-11-25 | Tokyo Electron Limited | Dielectric treatment module using scanning IR radiation source |
| US20100068897A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric treatment platform for dielectric film deposition and curing |
| US20100183851A1 (en) * | 2009-01-21 | 2010-07-22 | Yi Cao | Photoresist Image-forming Process Using Double Patterning |
| US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
| US8426763B2 (en) * | 2009-04-23 | 2013-04-23 | Micron Technology, Inc. | Rapid thermal processing systems and methods for treating microelectronic substrates |
| US9017933B2 (en) * | 2010-03-29 | 2015-04-28 | Tokyo Electron Limited | Method for integrating low-k dielectrics |
| JP5663959B2 (ja) * | 2010-05-28 | 2015-02-04 | Jsr株式会社 | 絶縁パターン形成方法及びダマシンプロセス用絶縁パターン形成材料 |
| US20140127901A1 (en) * | 2012-11-08 | 2014-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-k damage free integration scheme for copper interconnects |
| US12441879B2 (en) | 2019-08-21 | 2025-10-14 | Ticona Llc | Polymer composition for laser direct structuring |
| US11258184B2 (en) | 2019-08-21 | 2022-02-22 | Ticona Llc | Antenna system including a polymer composition having a low dissipation factor |
| US11637365B2 (en) * | 2019-08-21 | 2023-04-25 | Ticona Llc | Polymer composition for use in an antenna system |
| US12209164B2 (en) | 2019-09-10 | 2025-01-28 | Ticona Llc | Polymer composition and film for use in 5G applications |
| US12142820B2 (en) | 2019-09-10 | 2024-11-12 | Ticona Llc | 5G system containing a polymer composition |
| US12294185B2 (en) | 2019-09-10 | 2025-05-06 | Ticona Llc | Electrical connector formed from a polymer composition having a low dielectric constant and dissipation factor |
| US11555113B2 (en) | 2019-09-10 | 2023-01-17 | Ticona Llc | Liquid crystalline polymer composition |
| US11912817B2 (en) | 2019-09-10 | 2024-02-27 | Ticona Llc | Polymer composition for laser direct structuring |
| US11646760B2 (en) | 2019-09-23 | 2023-05-09 | Ticona Llc | RF filter for use at 5G frequencies |
| US11917753B2 (en) | 2019-09-23 | 2024-02-27 | Ticona Llc | Circuit board for use at 5G frequencies |
| US10985071B1 (en) * | 2019-10-30 | 2021-04-20 | United Microelectronics Corp. | Gate oxide forming process |
| US11721888B2 (en) | 2019-11-11 | 2023-08-08 | Ticona Llc | Antenna cover including a polymer composition having a low dielectric constant and dissipation factor |
| KR20220145385A (ko) | 2020-02-26 | 2022-10-28 | 티코나 엘엘씨 | 회로 구조체 |
| RU2752125C1 (ru) * | 2020-11-20 | 2021-07-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
| US11728559B2 (en) | 2021-02-18 | 2023-08-15 | Ticona Llc | Polymer composition for use in an antenna system |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3619231A (en) * | 1965-10-15 | 1971-11-09 | Anchor Post Prod | Continuous metal coating process with fusible pulverulent materials |
| GB1549346A (en) * | 1975-05-12 | 1979-08-08 | Armco Inc | Method of coating elongated metallic members with a thermosetting plastics coating |
| US4331485A (en) | 1980-03-03 | 1982-05-25 | Arnon Gat | Method for heat treating semiconductor material using high intensity CW lamps |
| US4356384A (en) | 1980-03-03 | 1982-10-26 | Arnon Gat | Method and means for heat treating semiconductor material using high intensity CW lamps |
| US4680451A (en) | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
| JPH02303131A (ja) * | 1989-05-18 | 1990-12-17 | Oki Electric Ind Co Ltd | 絶縁膜形成方法 |
| JPH05226241A (ja) | 1992-02-18 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
| US5358740A (en) | 1992-06-24 | 1994-10-25 | Massachusetts Institute Of Technology | Method for low pressure spin coating and low pressure spin coating apparatus |
| JP3276449B2 (ja) | 1993-05-13 | 2002-04-22 | 富士通株式会社 | 回転塗布方法 |
| KR950034495A (ko) | 1994-04-20 | 1995-12-28 | 윌리엄 이.힐러 | 반도체 장치 제조를 위한 고 수율 광 경화 공정 |
| US5449427A (en) | 1994-05-23 | 1995-09-12 | General Electric Company | Processing low dielectric constant materials for high speed electronics |
| US5705232A (en) | 1994-09-20 | 1998-01-06 | Texas Instruments Incorporated | In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing |
| US6133550A (en) | 1996-03-22 | 2000-10-17 | Sandia Corporation | Method and apparatus for thermal processing of semiconductor substrates |
| US6051512A (en) | 1997-04-11 | 2000-04-18 | Steag Rtp Systems | Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers |
| EP0881668A3 (de) * | 1997-05-28 | 2000-11-15 | Dow Corning Toray Silicone Company, Ltd. | Abscheidung eines elektrisch isolierenden Dünnfilms mit einer niedrigen Dielektrizitätskonstante |
| US5965047A (en) | 1997-10-24 | 1999-10-12 | Steag Ast | Rapid thermal processing (RTP) system with rotating substrate |
| US5906859A (en) | 1998-07-10 | 1999-05-25 | Dow Corning Corporation | Method for producing low dielectric coatings from hydrogen silsequioxane resin |
| US6066574A (en) | 1998-11-06 | 2000-05-23 | Advanced Micro Devices, Inc. | Hot plate cure process for BCB low k interlevel dielectric |
| US6225238B1 (en) * | 1999-06-07 | 2001-05-01 | Allied Signal Inc | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes |
| US6107357A (en) | 1999-11-16 | 2000-08-22 | International Business Machines Corporatrion | Dielectric compositions and method for their manufacture |
-
2001
- 2001-02-20 US US09/789,062 patent/US6303524B1/en not_active Expired - Lifetime
-
2002
- 2002-01-24 KR KR10-2003-7010829A patent/KR20030074838A/ko not_active Withdrawn
- 2002-01-24 EP EP02715628A patent/EP1364397B1/de not_active Expired - Lifetime
- 2002-01-24 WO PCT/IB2002/000210 patent/WO2002067314A2/en not_active Ceased
- 2002-01-24 DE DE60221649T patent/DE60221649T2/de not_active Expired - Fee Related
- 2002-01-24 AT AT02715628T patent/ATE369624T1/de not_active IP Right Cessation
- 2002-02-04 TW TW091101926A patent/TW536759B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1364397A2 (de) | 2003-11-26 |
| WO2002067314A3 (en) | 2002-12-05 |
| KR20030074838A (ko) | 2003-09-19 |
| DE60221649D1 (de) | 2007-09-20 |
| US6303524B1 (en) | 2001-10-16 |
| EP1364397B1 (de) | 2007-08-08 |
| TW536759B (en) | 2003-06-11 |
| WO2002067314A2 (en) | 2002-08-29 |
| DE60221649T2 (de) | 2008-05-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |