ATE371957T1 - Halbleiteranordnungen mit feldformungsgebieten - Google Patents
Halbleiteranordnungen mit feldformungsgebietenInfo
- Publication number
- ATE371957T1 ATE371957T1 AT02712149T AT02712149T ATE371957T1 AT E371957 T1 ATE371957 T1 AT E371957T1 AT 02712149 T AT02712149 T AT 02712149T AT 02712149 T AT02712149 T AT 02712149T AT E371957 T1 ATE371957 T1 AT E371957T1
- Authority
- AT
- Austria
- Prior art keywords
- voltage
- insulating layer
- resistive path
- trench
- sustaining zone
- Prior art date
Links
- 238000007493 shaping process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0104342.1A GB0104342D0 (en) | 2001-02-22 | 2001-02-22 | Semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE371957T1 true ATE371957T1 (de) | 2007-09-15 |
Family
ID=9909252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02712149T ATE371957T1 (de) | 2001-02-22 | 2002-02-15 | Halbleiteranordnungen mit feldformungsgebieten |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6605862B2 (de) |
| EP (1) | EP1368837B1 (de) |
| JP (1) | JP4125126B2 (de) |
| KR (1) | KR100900852B1 (de) |
| AT (1) | ATE371957T1 (de) |
| DE (1) | DE60222099T2 (de) |
| GB (1) | GB0104342D0 (de) |
| WO (1) | WO2002067332A2 (de) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803626B2 (en) * | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
| US6787872B2 (en) * | 2001-06-26 | 2004-09-07 | International Rectifier Corporation | Lateral conduction superjunction semiconductor device |
| US7166890B2 (en) | 2003-10-21 | 2007-01-23 | Srikant Sridevan | Superjunction device with improved ruggedness |
| DE102004007197B4 (de) | 2004-02-13 | 2012-11-08 | Infineon Technologies Ag | Hochsperrendes Halbleiterbauelement mit niedriger Durchlassspannung |
| DE102004046697B4 (de) * | 2004-09-24 | 2020-06-10 | Infineon Technologies Ag | Hochspannungsfestes Halbleiterbauelement mit vertikal leitenden Halbleiterkörperbereichen und einer Grabenstruktur sowie Verfahren zur Herstellung desselben |
| US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
| US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
| US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
| US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
| CN101223671B (zh) * | 2005-07-15 | 2010-06-16 | 艾利森电话股份有限公司 | 用于峰值电场抑制的装置 |
| US8461648B2 (en) | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
| US8110868B2 (en) | 2005-07-27 | 2012-02-07 | Infineon Technologies Austria Ag | Power semiconductor component with a low on-state resistance |
| DE102005046711B4 (de) * | 2005-09-29 | 2007-12-27 | Infineon Technologies Austria Ag | Verfahren zur Herstellung eines vertikalen MOS-Halbleiterbauelementes mit dünner Dielektrikumsschicht und tiefreichenden vertikalen Abschnitten |
| US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
| US7659588B2 (en) * | 2006-01-26 | 2010-02-09 | Siliconix Technology C. V. | Termination for a superjunction device |
| US8080848B2 (en) * | 2006-05-11 | 2011-12-20 | Fairchild Semiconductor Corporation | High voltage semiconductor device with lateral series capacitive structure |
| EP2047514A4 (de) * | 2006-07-31 | 2010-12-01 | Vishay Siliconix | MOLYBDÄNSPERRMETALL FÜR SiC-SCHOTTKYDIODE UND HERSTELLUNGSVERFAHREN |
| US7691734B2 (en) * | 2007-03-01 | 2010-04-06 | International Business Machines Corporation | Deep trench based far subcollector reachthrough |
| US20080296636A1 (en) * | 2007-05-31 | 2008-12-04 | Darwish Mohamed N | Devices and integrated circuits including lateral floating capacitively coupled structures |
| TW200921912A (en) * | 2007-11-05 | 2009-05-16 | Anpec Electronics Corp | Power transistor capable of decreasing capacitance between gate and drain |
| US8193565B2 (en) * | 2008-04-18 | 2012-06-05 | Fairchild Semiconductor Corporation | Multi-level lateral floating coupled capacitor transistor structures |
| US8203181B2 (en) | 2008-09-30 | 2012-06-19 | Infineon Technologies Austria Ag | Trench MOSFET semiconductor device and manufacturing method therefor |
| US8022474B2 (en) | 2008-09-30 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device |
| KR101171886B1 (ko) * | 2009-07-31 | 2012-08-07 | 에스케이하이닉스 주식회사 | 매립게이트를 구비한 반도체장치 및 그 제조 방법 |
| US8624302B2 (en) * | 2010-02-05 | 2014-01-07 | Fairchild Semiconductor Corporation | Structure and method for post oxidation silicon trench bottom shaping |
| WO2012060014A1 (ja) * | 2010-11-05 | 2012-05-10 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN102566842B (zh) * | 2010-12-06 | 2014-10-29 | 乐金显示有限公司 | 静电电容型触摸屏面板 |
| US8716788B2 (en) * | 2011-09-30 | 2014-05-06 | Infineon Technologies Austria Ag | Semiconductor device with self-charging field electrodes |
| US9391149B2 (en) * | 2013-06-19 | 2016-07-12 | Infineon Technologies Austria Ag | Semiconductor device with self-charging field electrodes |
| CN105529369B (zh) * | 2016-03-08 | 2019-05-14 | 中国电子科技集团公司第二十四研究所 | 一种半导体元胞结构和功率半导体器件 |
| DE102017114568B4 (de) * | 2017-06-29 | 2021-11-25 | Infineon Technologies Austria Ag | Leistungshalbleitervorrichtung mit unterschiedlichen gatekreuzungen und verfahren zum herstellen davon |
| JP2019091822A (ja) * | 2017-11-15 | 2019-06-13 | 株式会社東芝 | 半導体装置 |
| TW201937607A (zh) | 2018-02-23 | 2019-09-16 | 力智電子股份有限公司 | 溝槽式閘極金氧半場效電晶體 |
| JP7374795B2 (ja) * | 2020-02-05 | 2023-11-07 | 株式会社東芝 | 半導体装置 |
| CN115117155B (zh) * | 2021-08-11 | 2025-12-05 | 中国电子科技集团公司第二十四研究所 | 电阻场板非对称栅场效应器件及其制备方法 |
| CN114093951B (zh) * | 2021-11-12 | 2024-09-24 | 济南晶恒电子有限责任公司 | 一种抗emi的超结vdmos器件及制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2089119A (en) | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| US4933739A (en) * | 1988-04-26 | 1990-06-12 | Eliyahou Harari | Trench resistor structures for compact semiconductor memory and logic devices |
| US5744851A (en) * | 1992-01-27 | 1998-04-28 | Harris Corporation | Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions |
| US5895951A (en) * | 1996-04-05 | 1999-04-20 | Megamos Corporation | MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches |
| DE19848828C2 (de) | 1998-10-22 | 2001-09-13 | Infineon Technologies Ag | Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit |
| AU4820100A (en) * | 1999-05-06 | 2000-11-21 | Cp Clare Corporation | Mosfet with field reducing trenches in body region |
| GB0003184D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device and a method of fabricating material for a semiconductor device |
| GB0003186D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device |
-
2001
- 2001-02-22 GB GBGB0104342.1A patent/GB0104342D0/en not_active Ceased
-
2002
- 2002-02-07 US US10/068,921 patent/US6605862B2/en not_active Expired - Fee Related
- 2002-02-15 DE DE60222099T patent/DE60222099T2/de not_active Expired - Lifetime
- 2002-02-15 JP JP2002566557A patent/JP4125126B2/ja not_active Expired - Fee Related
- 2002-02-15 AT AT02712149T patent/ATE371957T1/de not_active IP Right Cessation
- 2002-02-15 EP EP02712149A patent/EP1368837B1/de not_active Expired - Lifetime
- 2002-02-15 WO PCT/IB2002/000478 patent/WO2002067332A2/en not_active Ceased
- 2002-02-15 KR KR1020027014099A patent/KR100900852B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6605862B2 (en) | 2003-08-12 |
| JP4125126B2 (ja) | 2008-07-30 |
| DE60222099T2 (de) | 2008-05-21 |
| DE60222099D1 (de) | 2007-10-11 |
| KR20020092439A (ko) | 2002-12-11 |
| GB0104342D0 (en) | 2001-04-11 |
| JP2004519848A (ja) | 2004-07-02 |
| EP1368837B1 (de) | 2007-08-29 |
| EP1368837A2 (de) | 2003-12-10 |
| WO2002067332A2 (en) | 2002-08-29 |
| US20020130358A1 (en) | 2002-09-19 |
| WO2002067332A3 (en) | 2003-02-20 |
| KR100900852B1 (ko) | 2009-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |