ATE356439T1 - Graben-gate-feldeffekttransistoren und ihre herstellung - Google Patents

Graben-gate-feldeffekttransistoren und ihre herstellung

Info

Publication number
ATE356439T1
ATE356439T1 AT01996888T AT01996888T ATE356439T1 AT E356439 T1 ATE356439 T1 AT E356439T1 AT 01996888 T AT01996888 T AT 01996888T AT 01996888 T AT01996888 T AT 01996888T AT E356439 T1 ATE356439 T1 AT E356439T1
Authority
AT
Austria
Prior art keywords
electrode
gate
transistor
gate electrode
trench
Prior art date
Application number
AT01996888T
Other languages
English (en)
Inventor
Raymond J Grover
Steven T Peake
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE356439T1 publication Critical patent/ATE356439T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
AT01996888T 2000-11-17 2001-11-16 Graben-gate-feldeffekttransistoren und ihre herstellung ATE356439T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0028031.3A GB0028031D0 (en) 2000-11-17 2000-11-17 Trench-gate field-effect transistors and their manufacture

Publications (1)

Publication Number Publication Date
ATE356439T1 true ATE356439T1 (de) 2007-03-15

Family

ID=9903324

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01996888T ATE356439T1 (de) 2000-11-17 2001-11-16 Graben-gate-feldeffekttransistoren und ihre herstellung

Country Status (8)

Country Link
US (1) US6566708B1 (de)
EP (1) EP1340263B1 (de)
JP (1) JP4087248B2 (de)
KR (1) KR100816253B1 (de)
AT (1) ATE356439T1 (de)
DE (1) DE60127166T2 (de)
GB (1) GB0028031D0 (de)
WO (1) WO2002041404A2 (de)

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DE10211543B4 (de) * 2002-03-15 2005-06-30 Infineon Technologies Ag Schaltungsanordnung mit einem Feldeffekttransistor und Verfahren zum Betrieb der Schaltungsanordnung
US6656843B2 (en) * 2002-04-25 2003-12-02 International Rectifier Corporation Single mask trench fred with enlarged Schottky area
DE10223699B4 (de) * 2002-05-28 2007-11-22 Infineon Technologies Ag MOS-Transistoreinrichtung vom Trenchtyp
ES2578678T3 (es) * 2003-01-21 2016-07-29 Ambixtra (Pty) Ltd Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida
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US7214984B2 (en) * 2003-11-25 2007-05-08 Matsushita Electric Industrial Co., Ltd. High-breakdown-voltage insulated gate semiconductor device
DE102004045467B4 (de) * 2004-09-20 2020-07-30 Infineon Technologies Ag Feldeffekt-Trenchtransistor
ITTO20050630A1 (it) * 2005-09-15 2007-03-16 St Microelectronics Srl Dispositivo di potenza a semiconduttore a porta isolata formata in uno scavo e relativo procedimento di fabbricazione
US20070262395A1 (en) 2006-05-11 2007-11-15 Gibbons Jasper S Memory cell access devices and methods of making the same
US8860174B2 (en) * 2006-05-11 2014-10-14 Micron Technology, Inc. Recessed antifuse structures and methods of making the same
US8008144B2 (en) 2006-05-11 2011-08-30 Micron Technology, Inc. Dual work function recessed access device and methods of forming
KR100741919B1 (ko) * 2006-09-12 2007-07-24 동부일렉트로닉스 주식회사 Ｐｎ 접합 게이트 전극을 포함하는 트렌치형 모스트랜지스터 및 그 제조 방법
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DE102007004090B4 (de) * 2007-01-26 2016-10-27 Infineon Technologies Austria Ag Halbleiterbauelement mit einer Driftzone und einer Driftsteuerzone
US7821033B2 (en) 2007-02-15 2010-10-26 Infineon Technologies Austria Ag Semiconductor component comprising a drift zone and a drift control zone
KR20090025816A (ko) * 2007-09-07 2009-03-11 주식회사 동부하이텍 트렌치 트랜지스터 및 그의 형성 방법
JP4800286B2 (ja) * 2007-10-16 2011-10-26 Ｏｋｉセミコンダクタ株式会社 半導体装置とその製造方法
US7824986B2 (en) 2008-11-05 2010-11-02 Micron Technology, Inc. Methods of forming a plurality of transistor gates, and methods of forming a plurality of transistor gates having at least two different work functions
DE102009055328B4 (de) * 2009-12-28 2014-08-21 Infineon Technologies Austria Ag Halbleiterbauelement mit einer Emittersteuerelektrode und IGBT eine solche aufweisend
TWI397154B (zh) * 2010-01-21 2013-05-21 Great Power Semiconductor Corp 具有蕭特基二極體之溝槽式功率半導體結構及其製造方法
US8435853B2 (en) * 2010-08-30 2013-05-07 Infineon Technologies Ag Method for forming a semiconductor device, and a semiconductor with an integrated poly-diode
JP6084357B2 (ja) * 2011-11-02 2017-02-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5700027B2 (ja) * 2012-12-07 2015-04-15 トヨタ自動車株式会社 半導体装置
US9472570B2 (en) * 2014-02-18 2016-10-18 Globalfoundries Inc. Diode biased body contacted transistor
CN105810732B (zh) * 2014-12-31 2019-01-22 帅群微电子股份有限公司 沟槽式功率金氧半场效晶体管与其制作方法
CN106941114A (zh) * 2016-01-05 2017-07-11 株洲中车时代电气股份有限公司 沟槽栅igbt
TWI606519B (zh) * 2016-09-09 2017-11-21 帥群微電子股份有限公司 溝槽式功率半導體元件及其製造方法
CN106783611A (zh) * 2017-03-21 2017-05-31 株洲中车时代电气股份有限公司 一种具有栅极内嵌二极管的沟槽栅igbt及其制备方法
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US20220037519A1 (en) * 2020-07-29 2022-02-03 Fu-Chang Hsu Transistor structures and associated processes
IT202000018733A1 (it) * 2020-07-31 2022-01-31 St Microelectronics Srl Transistore mos integrato con disabilitazione selettiva delle sue celle
CN112201687A (zh) * 2020-10-30 2021-01-08 深圳市威兆半导体有限公司 一种npn三明治栅结构的沟槽mosfet器件
CN112164721A (zh) * 2020-10-30 2021-01-01 深圳市威兆半导体有限公司 一种具有双向esd保护能力的sgt mosfet器件
CN114512403B (zh) * 2020-11-16 2023-06-23 苏州东微半导体股份有限公司 半导体器件的制造方法
CN113571575B (zh) * 2021-06-09 2023-01-10 松山湖材料实验室 碳化硅功率半导体器件和场效应晶体管
CN113437141A (zh) * 2021-06-24 2021-09-24 电子科技大学 一种具有多晶硅二极管栅极结构的浮空p区cstbt器件
JP7748832B2 (ja) * 2021-08-26 2025-10-03 ローム株式会社 半導体装置
CN114093934B (zh) * 2022-01-20 2022-05-20 深圳市威兆半导体有限公司 一种igbt器件及其制造方法
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Also Published As

Publication number Publication date
DE60127166T2 (de) 2008-01-10
WO2002041404A3 (en) 2002-10-10
US6566708B1 (en) 2003-05-20
GB0028031D0 (en) 2001-01-03
EP1340263A2 (de) 2003-09-03
DE60127166D1 (de) 2007-04-19
EP1340263B1 (de) 2007-03-07
JP4087248B2 (ja) 2008-05-21
KR100816253B1 (ko) 2008-03-21
JP2004514293A (ja) 2004-05-13
KR20020082482A (ko) 2002-10-31
WO2002041404A2 (en) 2002-05-23

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