ATE374432T1 - Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben - Google Patents

Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben

Info

Publication number
ATE374432T1
ATE374432T1 AT99908113T AT99908113T ATE374432T1 AT E374432 T1 ATE374432 T1 AT E374432T1 AT 99908113 T AT99908113 T AT 99908113T AT 99908113 T AT99908113 T AT 99908113T AT E374432 T1 ATE374432 T1 AT E374432T1
Authority
AT
Austria
Prior art keywords
axis
particle beam
work stage
workpiece
beam source
Prior art date
Application number
AT99908113T
Other languages
English (en)
Inventor
Charles Libby
Billy Ward
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE374432T1 publication Critical patent/ATE374432T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3005Observing the objects or the point of impact on the object
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206Modifying objects while observing
    • H01J2237/2067Surface alteration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • H01J2237/3151Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31742Etching microareas for repairing masks
    • H01J2237/31744Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31745Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Steering Devices For Bicycles And Motorcycles (AREA)
  • Support Of Aerials (AREA)
  • Reciprocating Pumps (AREA)
  • Machine Tool Units (AREA)
  • Drying Of Semiconductors (AREA)
AT99908113T 1998-02-11 1999-02-09 Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben ATE374432T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/022,065 US6039000A (en) 1998-02-11 1998-02-11 Focused particle beam systems and methods using a tilt column

Publications (1)

Publication Number Publication Date
ATE374432T1 true ATE374432T1 (de) 2007-10-15

Family

ID=21807650

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99908113T ATE374432T1 (de) 1998-02-11 1999-02-09 Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben

Country Status (8)

Country Link
US (2) US6039000A (de)
EP (1) EP1053562B1 (de)
JP (1) JP4754069B2 (de)
KR (1) KR100533783B1 (de)
AT (1) ATE374432T1 (de)
CA (1) CA2320149A1 (de)
DE (1) DE69937188T2 (de)
WO (1) WO1999041765A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19802848B4 (de) * 1998-01-26 2012-02-02 Display Products Group,Inc. Verfahren und Vorrichtung zum Testen eines Substrats
JP3041600B2 (ja) * 1998-05-19 2000-05-15 セイコーインスツルメンツ株式会社 複合荷電粒子ビーム装置
JP3663056B2 (ja) * 1998-07-23 2005-06-22 株式会社日立製作所 電子顕微鏡用試料加熱ホルダ及び試料観察方法
JP2000106121A (ja) * 1998-07-29 2000-04-11 Jeol Ltd 電子顕微鏡あるいはその類似装置
US7094312B2 (en) * 1999-07-22 2006-08-22 Fsi Company Focused particle beam systems and methods using a tilt column
JP2001273861A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 荷電ビーム装置およびパターン傾斜観察方法
RU2164718C1 (ru) * 2000-07-04 2001-03-27 Общество с ограниченной ответственностью "Агентство маркетинга научных разработок" Установка для формирования наноструктур на поверхности полупроводниковых пластин ионными пучками
JP2004510295A (ja) * 2000-09-20 2004-04-02 エフ・イ−・アイ・カンパニー 荷電粒子ビームシステムにおける同時の映像化と照射のためのリアルタイムモニタリング
JP4178741B2 (ja) * 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
JP4855598B2 (ja) * 2001-07-05 2012-01-18 株式会社日立製作所 試料作製装置および試料作製方法
DE60144508D1 (de) * 2000-11-06 2011-06-09 Hitachi Ltd Verfahren zur Herstellung von Proben
EP1436601B1 (de) * 2001-05-23 2014-10-01 Omniprobe, Inc. Verfahren zur probentrennung und probenaushebung
US6670610B2 (en) * 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
US6797967B1 (en) * 2002-02-25 2004-09-28 Advanced Micro Devices, Inc. Method and system for dose control during an ion implantation process
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
US6822246B2 (en) * 2002-03-27 2004-11-23 Kla-Tencor Technologies Corporation Ribbon electron beam for inspection system
US6661009B1 (en) 2002-05-31 2003-12-09 Fei Company Apparatus for tilting a beam system
TW556256B (en) * 2002-07-08 2003-10-01 Chartered Semicoductor Mfg Ltd Method for a plan-view transmission electron microscopy sample preparation technique for via and contact characterization
JP2006509999A (ja) * 2002-08-02 2006-03-23 イー エイ フィシオネ インストルメンツ インコーポレーテッド 顕微鏡の試料調製方法及び装置
DE10302794A1 (de) * 2003-01-24 2004-07-29 Nawotec Gmbh Verfahren und Vorrichtung zur Herstellung von Korpuskularstrahlsystemen
US7002152B2 (en) * 2003-02-15 2006-02-21 Bal-Tec Ag Sample preparation for transmission electron microscopy
DE602004021750D1 (de) * 2003-07-14 2009-08-13 Fei Co Zweistrahlsystem
US9159527B2 (en) * 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
DE10351276A1 (de) * 2003-10-31 2005-06-16 Leo Elektronenmikroskopie Gmbh Teilchenstrahlgerät
EP1630849B1 (de) * 2004-08-27 2011-11-02 Fei Company Lokalisierte Plasmabehandlung
JP5033314B2 (ja) * 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
JP4664041B2 (ja) * 2004-10-27 2011-04-06 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置及び試料作製方法
JP4413746B2 (ja) * 2004-10-28 2010-02-10 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
DE102005002006A1 (de) * 2005-01-15 2006-07-27 Kuratorium Offis E.V. Vorrichtung zur Herstellung von 3D-Strukturen
JP2006252995A (ja) * 2005-03-11 2006-09-21 Jeol Ltd 荷電粒子ビーム装置
JP4634288B2 (ja) * 2005-11-22 2011-02-16 株式会社日立ハイテクノロジーズ 集束イオンビーム加工方法及び荷電粒子ビーム装置
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP4533306B2 (ja) * 2005-12-06 2010-09-01 株式会社日立ハイテクノロジーズ 半導体ウェハ検査方法及び欠陥レビュー装置
JP4801996B2 (ja) * 2006-01-05 2011-10-26 株式会社ニューフレアテクノロジー 試料移動機構及び荷電粒子ビーム描画装置
JP4307470B2 (ja) * 2006-08-08 2009-08-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料加工方法及び半導体検査装置
EP2106555B1 (de) * 2006-10-20 2015-01-07 FEI Company Verfahren zur s/tem-probenanalyse
WO2008051880A2 (en) 2006-10-20 2008-05-02 Fei Company Method and apparatus for sample extraction and handling
EP1916695B1 (de) 2006-10-25 2018-12-05 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ladungsträgerstrahlgerät und Verfahren zum Betrieb desselben
JP5117764B2 (ja) 2007-05-22 2013-01-16 株式会社日立ハイテクノロジーズ 荷電粒子ビーム加工装置
WO2009020151A1 (ja) * 2007-08-08 2009-02-12 Sii Nanotechnology Inc. 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法
WO2009020150A1 (ja) * 2007-08-08 2009-02-12 Sii Nanotechnology Inc. 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法
JP4834704B2 (ja) * 2008-09-01 2011-12-14 株式会社日立製作所 試料作製方法
JP2011233249A (ja) * 2010-04-23 2011-11-17 Tokyo Institute Of Technology イオンビーム照射位置決め装置
EP2749863A3 (de) 2012-12-31 2016-05-04 Fei Company Verfahren zur Vorbereitung von Proben für Bildgebung
US8859963B2 (en) 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
US8912490B2 (en) 2011-06-03 2014-12-16 Fei Company Method for preparing samples for imaging
US9733164B2 (en) 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
US9237655B1 (en) 2013-03-15 2016-01-12 Lockheed Martin Corporation Material deposition on circuit card assemblies
GB201308436D0 (en) * 2013-05-10 2013-06-19 Oxford Instr Nanotechnology Tools Ltd Metrology for preparation of thin samples
TWI664658B (zh) * 2014-06-30 2019-07-01 日商日立高新技術科學股份有限公司 自動試料製作裝置
US10446369B1 (en) * 2017-06-14 2019-10-15 National Technology & Engineering Solutions Of Sandia, Llc Systems and methods for interferometric end point detection for a focused ion beam fabrication tool
US11440151B2 (en) 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
US10971618B2 (en) 2019-08-02 2021-04-06 Applied Materials Israel Ltd. Generating milled structural elements with a flat upper surface
US11261527B2 (en) 2019-08-12 2022-03-01 MEO Engineering Company, Inc. Method and apparatus for precursor gas injection
US11276557B2 (en) 2019-09-17 2022-03-15 Applied Materials Israel Ltd. Forming a vertical surface
CN112041671B (zh) * 2020-07-24 2023-10-20 长江存储科技有限责任公司 制备和分析薄膜的方法
CN113984821B (zh) * 2021-12-29 2022-03-11 中国科学院地质与地球物理研究所 纳米结构三维成像系统与方法
KR102803824B1 (ko) * 2023-01-31 2025-05-08 (주)라드피온 이온주입을 이용한 소재표면 개질장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128765A (en) * 1976-10-29 1978-12-05 Joseph Franks Ion beam machining techniques and apparatus
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
JPH084090B2 (ja) * 1986-08-27 1996-01-17 株式会社日立製作所 Ic配線の切断方法及び装置
JPH0235725A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd ドライエッチング方法およびドライエッチング装置
JP2779414B2 (ja) * 1988-12-01 1998-07-23 セイコーインスツルメンツ株式会社 ミクロ断面の加工・観察方法
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
JPH0463433A (ja) * 1990-07-02 1992-02-28 Mitsubishi Electric Corp 半導体素子の配線装置およびそれを用いた配線方法
JP2886649B2 (ja) * 1990-09-27 1999-04-26 株式会社日立製作所 イオンビーム加工方法及びその装置
JP3113674B2 (ja) * 1990-11-21 2000-12-04 株式会社日立製作所 荷電ビーム処理方法およびその装置
JPH0629251A (ja) * 1992-07-13 1994-02-04 Matsushita Electron Corp 中性粒子ビームエッチング装置
JPH0778737A (ja) * 1993-09-08 1995-03-20 Fujitsu Ltd 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
US5576542A (en) * 1993-12-08 1996-11-19 Kabushiki Kaisha Toshiba Substrate cross-section observing apparatus
US5770123A (en) * 1994-09-22 1998-06-23 Ebara Corporation Method and apparatus for energy beam machining
DE29507225U1 (de) 1995-04-29 1995-07-13 Grünewald, Wolfgang, Dr.rer.nat., 09122 Chemnitz Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie
US5541411A (en) * 1995-07-06 1996-07-30 Fei Company Image-to-image registration focused ion beam system
JPH09115861A (ja) * 1995-10-20 1997-05-02 Hitachi Ltd 試料を加工する装置
US6029251A (en) * 1996-12-31 2000-02-22 Opti Inc. Method and apparatus for temperature sensing

Also Published As

Publication number Publication date
JP4754069B2 (ja) 2011-08-24
WO1999041765A1 (en) 1999-08-19
KR100533783B1 (ko) 2005-12-07
DE69937188T2 (de) 2008-06-26
CA2320149A1 (en) 1999-08-19
DE69937188D1 (de) 2007-11-08
EP1053562A1 (de) 2000-11-22
JP2002503870A (ja) 2002-02-05
US6039000A (en) 2000-03-21
US6497194B1 (en) 2002-12-24
KR20010040911A (ko) 2001-05-15
EP1053562B1 (de) 2007-09-26

Similar Documents

Publication Publication Date Title
ATE374432T1 (de) Teilchenstrahlvorrichtung mit gekippter säule und verfahren zur verwendung derselben
EP1166948A3 (de) Vorrichtung und Verfahren zur Laserbehandlung
CA2225974A1 (en) Method and apparatus for determining an alternate route in a vehicle navigation system
ATE331993T1 (de) Verfahren und vorrichtung zum optischen abtasten von objekten
AU575788B2 (en) Image processing system
DE50103985D1 (de) Verfahren zum bearbeiten von werkstücken mittels mehrerer laserstrahlen
ATE216729T1 (de) Eine methode und ein gerät für die durchführung einer vervielfältigung von nukleinsäuren an trägern
DE69008315D1 (de) Verfahren zur Steuerung eines Wechselrichters.
BR0209497A (pt) Método e sistema para a transformação de aplicações de software de legado em sistemas modernos orientados a objetos
WO2003066282A3 (en) Systems and methods for characterizing a polishing process
KR960700584A (ko) 차량항법 시스템을 위한 위치 보정방법(position correction method for vehicle navigation system)
EP0965818A3 (de) Rotierendes Laserbeleuchtungssystem
DE50009677D1 (de) Verfaren und vorrichtung zum durchtrennen von flachen werkstücken aus sprödbrüchigem material
MXPA02012250A (es) Dispositivo y metodo para el tratamiento de superficies de piezas de trabajo.
ATE205984T1 (de) Steuersystem und verfahren zur virtuellen positionierung von medien
ATE164812T1 (de) Verfahren und vorrichtung zum zuführen, spannen und bearbeiten von bauteilen einer fahrzeugkarosserie
DE69722678D1 (de) Vorrichtung und verfahren um ein strahlrohr zu verschieben
FR2697218B1 (fr) Système de freinage pour véhicule ferroviaire utilisant des matériaux à base de carbone.
FI960086L (fi) Menetelmä metalli-ionien poistamiseksi nesteistä
WO2005042141A3 (de) Verfahren und vorrichtung zur ionenstrahlbearbeitung von oberflächen
ATE195824T1 (de) Verfahren und system zum dynamischen auswählen eines kommunikationsmodus
EP1203775A3 (de) Chemoattraktion-auslösender Faktor aus Lymphozyten und dessen Verwendung
EA200001120A1 (ru) Способ и устройство для обработки многокомпонентных сейсмических данных
ATE193225T1 (de) Hydrierungsträgerkatalysator enthaltendes katalysatorssystem und verfahren zur hydrodechlorierung von fluorchlorkohlenwasserstoffen
DE60112315D1 (de) Verfahren zur entfernung von verunreinigungen in harnstoffhydrolysereaktoren

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties