ATE376706T1 - Hochdotierte p-kontaktschicht für eine auf der vorderseite beleuchtete höchstgeschwindigkeitsfotodiode - Google Patents

Hochdotierte p-kontaktschicht für eine auf der vorderseite beleuchtete höchstgeschwindigkeitsfotodiode

Info

Publication number
ATE376706T1
ATE376706T1 AT99949900T AT99949900T ATE376706T1 AT E376706 T1 ATE376706 T1 AT E376706T1 AT 99949900 T AT99949900 T AT 99949900T AT 99949900 T AT99949900 T AT 99949900T AT E376706 T1 ATE376706 T1 AT E376706T1
Authority
AT
Austria
Prior art keywords
contact layer
highly doped
speed photodiode
photodiode illuminated
illuminated
Prior art date
Application number
AT99949900T
Other languages
English (en)
Inventor
Steven Williamson
Robert Sacks
Janis Valdmanis
Kadhair Hemyari
Original Assignee
Picometrix Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picometrix Llc filed Critical Picometrix Llc
Application granted granted Critical
Publication of ATE376706T1 publication Critical patent/ATE376706T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Light Receiving Elements (AREA)
  • Hybrid Cells (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT99949900T 1998-09-25 1999-09-24 Hochdotierte p-kontaktschicht für eine auf der vorderseite beleuchtete höchstgeschwindigkeitsfotodiode ATE376706T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/161,097 US6262465B1 (en) 1998-09-25 1998-09-25 Highly-doped P-type contact for high-speed, front-side illuminated photodiode

Publications (1)

Publication Number Publication Date
ATE376706T1 true ATE376706T1 (de) 2007-11-15

Family

ID=22579808

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99949900T ATE376706T1 (de) 1998-09-25 1999-09-24 Hochdotierte p-kontaktschicht für eine auf der vorderseite beleuchtete höchstgeschwindigkeitsfotodiode

Country Status (10)

Country Link
US (1) US6262465B1 (de)
EP (1) EP1116280B1 (de)
JP (1) JP4755341B2 (de)
KR (1) KR100660471B1 (de)
AT (1) ATE376706T1 (de)
AU (1) AU765715B2 (de)
CA (1) CA2345153C (de)
DE (1) DE69937406T2 (de)
NO (1) NO20011497L (de)
WO (1) WO2000019544A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518080B2 (en) 2001-06-19 2003-02-11 Sensors Unlimited, Inc. Method of fabricating low dark current photodiode arrays
US6955933B2 (en) * 2001-07-24 2005-10-18 Lumileds Lighting U.S., Llc Light emitting diodes with graded composition active regions
US7392390B2 (en) * 2001-12-12 2008-06-24 Valve Corporation Method and system for binding kerberos-style authenticators to single clients
KR100520626B1 (ko) * 2002-12-05 2005-10-10 삼성전자주식회사 핀 구조의 포토다이오드
JP2004281559A (ja) * 2003-03-13 2004-10-07 Toshiba Corp 半導体発光素子
JP3979378B2 (ja) * 2003-11-06 2007-09-19 住友電気工業株式会社 半導体発光素子
US20100147379A1 (en) * 2005-10-03 2010-06-17 Katsushi Kishimoto Silicon-based thin-film photoelectric conversion device, and method and apparatus for manufacturing the same
US20070262296A1 (en) * 2006-05-11 2007-11-15 Matthias Bauer Photodetectors employing germanium layers
US20080283605A1 (en) * 2007-05-16 2008-11-20 Sik Piu Kwan Device and system for a low noise photodiode in a barcode scanner
US8983302B2 (en) * 2009-11-05 2015-03-17 The Boeing Company Transceiver for plastic optical fiber networks
US9105790B2 (en) * 2009-11-05 2015-08-11 The Boeing Company Detector for plastic optical fiber networks
KR102069891B1 (ko) 2011-08-31 2020-01-28 삼성전자주식회사 광전 변환 소자

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
FR2658307A1 (fr) 1990-02-13 1991-08-16 Thomson Csf Guide d'onde optique integre et procede de realisation.
US5177628A (en) * 1990-04-24 1993-01-05 The University Of Colorado Foundation, Inc. Self-powered optically addressed spatial light modulator
FR2676126B1 (fr) 1991-04-30 1993-07-23 France Telecom Dispositif optoelectronique a guide optique et photodetecteur integres.
JP2781097B2 (ja) * 1992-01-30 1998-07-30 三菱電機株式会社 半導体装置およびその製造方法
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
JPH06163985A (ja) * 1992-11-24 1994-06-10 Mitsubishi Kasei Corp Ｉｉｉ −ｖ族化合物を用いた発光及び受光素子
US5818096A (en) * 1996-04-05 1998-10-06 Nippon Telegraph And Telephone Corp. Pin photodiode with improved frequency response and saturation output
JP3172996B2 (ja) * 1997-02-06 2001-06-04 住友電気工業株式会社 半導体受光素子

Also Published As

Publication number Publication date
KR20010079915A (ko) 2001-08-22
JP4755341B2 (ja) 2011-08-24
WO2000019544A1 (en) 2000-04-06
JP2002526931A (ja) 2002-08-20
AU765715B2 (en) 2003-09-25
NO20011497D0 (no) 2001-03-23
AU6267699A (en) 2000-04-17
CA2345153C (en) 2004-03-09
DE69937406T2 (de) 2008-07-24
NO20011497L (no) 2001-05-23
EP1116280B1 (de) 2007-10-24
CA2345153A1 (en) 2000-04-06
DE69937406D1 (de) 2007-12-06
WO2000019544A9 (en) 2001-11-01
US6262465B1 (en) 2001-07-17
EP1116280A1 (de) 2001-07-18
KR100660471B1 (ko) 2006-12-22

Similar Documents

Publication Publication Date Title
ATE376706T1 (de) Hochdotierte p-kontaktschicht für eine auf der vorderseite beleuchtete höchstgeschwindigkeitsfotodiode
AU5621598A (en) Light emitting articles with light reflecting structures
CA2200305A1 (en) Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime
ATE288074T1 (de) Detektionsschaltung
ATE247372T1 (de) Lichtemittierende organische vorrichtungen mit verbesserter kathode
AR054459A2 (es) Dispositivo optoelectronico organico fotosensible
TW200625679A (en) Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure
MY143357A (en) A carrier substrate for electronic components
TW359039B (en) Circuit-integrating light-receiving element
AR073856A2 (es) Polinucleotido que codifica un polipeptido con actividad de alfa-amilasa y casete de expresion que lo comprende.
DE69942515D1 (de) Stent mit verbesserter Zellkonfiguration
DK1265971T3 (da) Bioadhæsiv komposition, der omfatter et polyphenolprotein
HK1000745A1 (en) Semiconductor device having low source inductance
TW350145B (en) Semiconductor light emitting device with high light emission efficiency
MY143405A (en) N-type nitride semiconductor laminate and semiconductor device using same
DE69306439D1 (de) P.i.n-Fotodioden mit transparenten leitfähigen Kontakten
DE60115865T2 (de) Diamant-strahlungs-detektor
SE9102844L (sv) Monolitisk optokopplare
DE69007461D1 (de) Oberflächenemittierender Halbleiterlaser mit lateralem Elektrodenkontakt.
ATE280961T1 (de) Hochleistungs-superleuchtdiode mit einem gekrümmten mehrfachdurchgangs-wellenleiter
IT1248534B (it) Procedimento per la realizzazione di strutture di calibrazione particolarmente per la taratura di macchine di misura del disallineamento in circuiti integrati in genere.
PT1078350E (pt) Laminado flexivel e processo de fabrico do mesmo
ES2195471T3 (es) Instalacion tecnica domestica mural.
WO2002050592A3 (en) Photonic and electronic components on a shared substrate with through substrate communication
TR199900430T2 (xx) �kameli 1,2,3,4-tetrahidro-2-dibenzofuranaminler ve 2-aminosiklohepta$b] benzofuranlar.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties