ATE377630T1 - Siliciumhaltige verbindung, zusammensetzung und isolierfilm - Google Patents
Siliciumhaltige verbindung, zusammensetzung und isolierfilmInfo
- Publication number
- ATE377630T1 ATE377630T1 AT05011594T AT05011594T ATE377630T1 AT E377630 T1 ATE377630 T1 AT E377630T1 AT 05011594 T AT05011594 T AT 05011594T AT 05011594 T AT05011594 T AT 05011594T AT E377630 T1 ATE377630 T1 AT E377630T1
- Authority
- AT
- Austria
- Prior art keywords
- composition
- insulating film
- silicon compound
- integer
- formula
- Prior art date
Links
- 150000003377 silicon compounds Chemical class 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 3
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 239000000413 hydrolysate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004161361 | 2004-05-31 | ||
| JP2005075136A JP4610379B2 (ja) | 2004-05-31 | 2005-03-16 | ケイ素含有化合物、該化合物を含有する組成物及び絶縁材料 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE377630T1 true ATE377630T1 (de) | 2007-11-15 |
Family
ID=35057136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05011594T ATE377630T1 (de) | 2004-05-31 | 2005-05-30 | Siliciumhaltige verbindung, zusammensetzung und isolierfilm |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7534904B2 (de) |
| EP (1) | EP1602692B1 (de) |
| JP (1) | JP4610379B2 (de) |
| KR (1) | KR20060048135A (de) |
| AT (1) | ATE377630T1 (de) |
| DE (1) | DE602005003163T2 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4542927B2 (ja) * | 2005-03-17 | 2010-09-15 | 富士フイルム株式会社 | 膜形成用組成物、該組成物から得られた絶縁膜およびそれを有する電子デバイス |
| JP2007091844A (ja) * | 2005-09-28 | 2007-04-12 | Fujifilm Corp | 重合体および膜形成用組成物 |
| JP5003288B2 (ja) * | 2007-05-30 | 2012-08-15 | 株式会社Sumco | シリコンウェーハの評価方法およびシリコンウェーハの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455072A (en) | 1992-11-18 | 1995-10-03 | Bension; Rouvain M. | Initiation and bonding of diamond and other thin films |
| JP2000302791A (ja) * | 1999-04-20 | 2000-10-31 | Fujitsu Ltd | シリコン化合物、絶縁膜形成材料及び半導体装置 |
| JP4026386B2 (ja) * | 2001-12-26 | 2007-12-26 | チッソ株式会社 | 新規高分子化合物、該高分子前駆体、および該高分子前駆体を用いた薄膜形成方法 |
| KR101227664B1 (ko) | 2002-01-31 | 2013-01-29 | 도소 가부시키가이샤 | 유기실란화합물을 포함하여 구성되는 절연막용 재료, 그 제조방법 및 반도체장치 |
| WO2004090019A1 (en) * | 2003-04-11 | 2004-10-21 | Silecs Oy | Organo-silsesquioxane polymers for forming low-k dielectrics |
-
2005
- 2005-03-16 JP JP2005075136A patent/JP4610379B2/ja not_active Expired - Fee Related
- 2005-05-27 KR KR1020050044820A patent/KR20060048135A/ko not_active Ceased
- 2005-05-27 US US11/138,352 patent/US7534904B2/en not_active Expired - Fee Related
- 2005-05-30 DE DE602005003163T patent/DE602005003163T2/de not_active Expired - Lifetime
- 2005-05-30 AT AT05011594T patent/ATE377630T1/de not_active IP Right Cessation
- 2005-05-30 EP EP05011594A patent/EP1602692B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20050267308A1 (en) | 2005-12-01 |
| EP1602692A1 (de) | 2005-12-07 |
| JP2006016596A (ja) | 2006-01-19 |
| US7534904B2 (en) | 2009-05-19 |
| DE602005003163T2 (de) | 2008-08-28 |
| KR20060048135A (ko) | 2006-05-18 |
| JP4610379B2 (ja) | 2011-01-12 |
| EP1602692B1 (de) | 2007-11-07 |
| DE602005003163D1 (de) | 2007-12-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |