ATE377842T1 - Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode - Google Patents

Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode

Info

Publication number
ATE377842T1
ATE377842T1 AT99907966T AT99907966T ATE377842T1 AT E377842 T1 ATE377842 T1 AT E377842T1 AT 99907966 T AT99907966 T AT 99907966T AT 99907966 T AT99907966 T AT 99907966T AT E377842 T1 ATE377842 T1 AT E377842T1
Authority
AT
Austria
Prior art keywords
structures
modulator
producing
electrically conductive
field generator
Prior art date
Application number
AT99907966T
Other languages
English (en)
Inventor
Per-Erik Nordal
Geirr Leistad
Hans Gudesen
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO980385A external-priority patent/NO980385D0/no
Priority claimed from NO982518A external-priority patent/NO308149B1/no
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of ATE377842T1 publication Critical patent/ATE377842T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts
    • H10W20/068—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts by using a laser, e.g. laser cutting or laser direct writing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Prostheses (AREA)
  • Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Secondary Cells (AREA)
  • Contacts (AREA)
AT99907966T 1998-01-28 1999-01-28 Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode ATE377842T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO980385A NO980385D0 (no) 1998-01-28 1998-01-28 Kretser generert ved omvandling in situ
NO982518A NO308149B1 (no) 1998-06-02 1998-06-02 Skalerbar, integrert databehandlingsinnretning

Publications (1)

Publication Number Publication Date
ATE377842T1 true ATE377842T1 (de) 2007-11-15

Family

ID=26648814

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99907966T ATE377842T1 (de) 1998-01-28 1999-01-28 Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode

Country Status (11)

Country Link
US (3) US6403396B1 (de)
EP (2) EP1051745B1 (de)
JP (2) JP2002515641A (de)
KR (2) KR100375392B1 (de)
CN (2) CN1187793C (de)
AT (1) ATE377842T1 (de)
AU (2) AU733522B2 (de)
CA (2) CA2319428C (de)
DE (1) DE69937485T2 (de)
RU (2) RU2183882C2 (de)
WO (2) WO1999045582A1 (de)

Families Citing this family (144)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859548B2 (en) 1996-09-25 2005-02-22 Kabushiki Kaisha Toshiba Ultrasonic picture processing method and ultrasonic picture processing apparatus
US6839158B2 (en) 1997-08-28 2005-01-04 E Ink Corporation Encapsulated electrophoretic displays having a monolayer of capsules and materials and methods for making the same
US6842657B1 (en) 1999-04-09 2005-01-11 E Ink Corporation Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication
US7030412B1 (en) 1999-05-05 2006-04-18 E Ink Corporation Minimally-patterned semiconductor devices for display applications
WO2001007961A1 (en) 1999-07-21 2001-02-01 E Ink Corporation Use of a storage capacitor to enhance the performance of an active matrix driven electronic display
EP1208603A1 (de) 1999-08-31 2002-05-29 E Ink Corporation Transistor für eine elektronische anzeigevorrichtung
WO2001033649A1 (en) * 1999-11-02 2001-05-10 Koninklijke Philips Electronics N.V. Method of producing vertical interconnects between thin film microelectronic devices and products comprising such vertical interconnects
DE19964099B4 (de) * 1999-12-31 2006-04-06 Götzen, Reiner, Dipl.-Ing. Verfahren zur Herstellung dreidimensional angeordneter Leit- und Verbindungsstrukturen für Volumen- und Energieströme
EP1136942A1 (de) * 2000-03-22 2001-09-26 Infineon Technologies AG Schaltungsanordnung zum Schützen einer Schaltung gegen Analyse und Manipulation
US7893435B2 (en) 2000-04-18 2011-02-22 E Ink Corporation Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough
US6825068B2 (en) 2000-04-18 2004-11-30 E Ink Corporation Process for fabricating thin film transistors
US20040029310A1 (en) * 2000-08-18 2004-02-12 Adoft Bernds Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses
WO2002015264A2 (de) * 2000-08-18 2002-02-21 Siemens Aktiengesellschaft Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung
KR100394028B1 (ko) * 2000-12-28 2003-08-06 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
DE10043204A1 (de) * 2000-09-01 2002-04-04 Siemens Ag Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
DE10044842A1 (de) * 2000-09-11 2002-04-04 Siemens Ag Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters
EP1323195A1 (de) * 2000-09-22 2003-07-02 Siemens Aktiengesellschaft Elektrode und/oder leiterbahn für organische bauelemente und herstellungsverfahren dazu
DE10061297C2 (de) * 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
DE10061299A1 (de) * 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
DE10063721A1 (de) * 2000-12-20 2002-07-11 Merck Patent Gmbh Organischer Halbleiter, Herstellungsverfahren dazu und Verwendungen
DE10105914C1 (de) * 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
EP1374138A2 (de) * 2001-03-26 2004-01-02 Siemens Aktiengesellschaft Gerät mit zumindest zwei organischen elektronischen bauteilen und verfahren zur herstellung dazu
AU2002340793A1 (en) * 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
US6809955B2 (en) * 2001-05-07 2004-10-26 Advanced Micro Devices, Inc. Addressable and electrically reversible memory switch
WO2002091385A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Molecular memory cell
WO2002091384A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. A memory device with a self-assembled polymer film and method of making the same
WO2002091496A2 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
WO2002091476A1 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
WO2003009359A1 (fr) * 2001-07-16 2003-01-30 Boris Aronovich Gurovich Procede de formation d'une structure a couches multiples a parametres predetermines
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6967640B2 (en) 2001-07-27 2005-11-22 E Ink Corporation Microencapsulated electrophoretic display with integrated driver
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
DE60130586T2 (de) 2001-08-13 2008-06-19 Advanced Micro Devices, Inc., Sunnyvale Speicherzelle
DE10151036A1 (de) * 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
DE10160732A1 (de) * 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US6900851B2 (en) 2002-02-08 2005-05-31 E Ink Corporation Electro-optic displays and optical systems for addressing such displays
DE10212640B4 (de) * 2002-03-21 2004-02-05 Siemens Ag Logische Bauteile aus organischen Feldeffekttransistoren
DE10212639A1 (de) * 2002-03-21 2003-10-16 Siemens Ag Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen
RU2205469C1 (ru) * 2002-04-18 2003-05-27 Гурович Борис Аронович Способ получения объемной проводящей структуры
RU2205470C1 (ru) * 2002-05-07 2003-05-27 Гурович Борис Аронович Способ формирования структуры
DE10226370B4 (de) * 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
US6661024B1 (en) * 2002-07-02 2003-12-09 Motorola, Inc. Integrated circuit including field effect transistor and method of manufacture
WO2004017439A2 (de) * 2002-07-29 2004-02-26 Siemens Aktiengesellschaft Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu
DE50309888D1 (de) * 2002-08-08 2008-07-03 Polyic Gmbh & Co Kg Elektronisches gerät
DE50306683D1 (de) 2002-08-23 2007-04-12 Polyic Gmbh & Co Kg Organisches bauelement zum überspannungsschutz und dazugehörige schaltung
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
RU2317613C2 (ru) 2002-10-02 2008-02-20 Леонхард Курц Гмбх Унд Ко. Кг Пленка с органическими полупроводниками
RU2222847C1 (ru) * 2002-10-21 2004-01-27 Государственное предприятие "Центр технологий микроэлектроники" Наносенсорная система
US6870183B2 (en) * 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating
JP2006505927A (ja) * 2002-11-05 2006-02-16 ポリアイシー ゲーエムベーハー ウント コー、 カーゲー 高分解能の構造を有する有機電子要素およびそれを製造する方法
DE10253154A1 (de) * 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
ATE540436T1 (de) * 2002-11-19 2012-01-15 Polyic Gmbh & Co Kg Organisches elektronisches bauelement mit gleichem organischem material für zumindest zwei funktionsschichten
ES2282708T3 (es) * 2002-11-19 2007-10-16 POLYIC GMBH & CO. KG Componente electronico organico con capa funcional semiconductora estructurada y metodo para producir el mismo.
US6905908B2 (en) * 2002-12-26 2005-06-14 Motorola, Inc. Method of fabricating organic field effect transistors
DE10300521A1 (de) * 2003-01-09 2004-07-22 Siemens Ag Organoresistiver Speicher
US8042267B2 (en) * 2003-01-17 2011-10-25 microTec Gesellschaft für Mikrotechnologie mbH Method for producing microsystems
DE10302149A1 (de) * 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
EP1586127B1 (de) * 2003-01-21 2007-05-02 PolyIC GmbH & Co. KG Organisches elektronikbauteil und verfahren zur herstellung organischer elektronik
JP2006519483A (ja) * 2003-01-29 2006-08-24 ポリアイシー ゲーエムベーハー ウント コー、 カーゲー 有機メモリ装置及びそのためのドライバ回路
JP2004311845A (ja) * 2003-04-09 2004-11-04 National Institute Of Advanced Industrial & Technology 発電機能を有する可視光透過構造体
US7049153B2 (en) 2003-04-23 2006-05-23 Micron Technology, Inc. Polymer-based ferroelectric memory
JP4583004B2 (ja) * 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法
DE10330062A1 (de) * 2003-07-03 2005-01-27 Siemens Ag Verfahren und Vorrichtung zur Strukturierung von organischen Schichten
DE10330064B3 (de) * 2003-07-03 2004-12-09 Siemens Ag Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen
RU2243613C1 (ru) * 2003-07-16 2004-12-27 Гурович Борис Аронович Способ формирования объемной структуры
DE10338277A1 (de) * 2003-08-20 2005-03-17 Siemens Ag Organischer Kondensator mit spannungsgesteuerter Kapazität
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340644B4 (de) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
DE10340643B4 (de) * 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
EP1665406A1 (de) * 2003-09-24 2006-06-07 E.I. Dupont De Nemours And Company Prozess zum laminieren einer dielektrischen schicht auf einen halbleiter
JP4729843B2 (ja) * 2003-10-15 2011-07-20 凸版印刷株式会社 薄膜トランジスタの製造方法
DE10349963A1 (de) 2003-10-24 2005-06-02 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung einer Folie
DE102004002024A1 (de) * 2004-01-14 2005-08-11 Siemens Ag Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung
JP4501444B2 (ja) * 2004-02-04 2010-07-14 ソニー株式会社 トランジスタにおける配線構造の形成方法及び電界効果型トランジスタの製造方法
JP4805254B2 (ja) 2004-04-20 2011-11-02 ビジュアルソニックス インコーポレイテッド 配列された超音波トランスデューサ
US7122489B2 (en) * 2004-05-12 2006-10-17 Matsushita Electric Industrial Co., Ltd. Manufacturing method of composite sheet material using ultrafast laser pulses
WO2005112591A2 (en) * 2004-05-14 2005-12-01 Wavezero, Inc. Radiofrequency antennae and identification tags and methods of manufacturing radiofrequency antennae and radiofrequency identification tags
US7019328B2 (en) * 2004-06-08 2006-03-28 Palo Alto Research Center Incorporated Printed transistors
GB0413749D0 (en) * 2004-06-19 2004-07-21 Koninkl Philips Electronics Nv Active matrix electronic array device
DE102004040831A1 (de) * 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Funketikettfähige Umverpackung
RU2284267C2 (ru) * 2004-11-10 2006-09-27 Броня Цой Материал для компонентов радиоэлектронных приборов
DE102004059465A1 (de) * 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg Erkennungssystem
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
DE102004059464A1 (de) * 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Elektronikbauteil mit Modulator
DE102004063435A1 (de) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organischer Gleichrichter
DE102005009819A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005009820A1 (de) * 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
DE102005017655B4 (de) * 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
KR100719346B1 (ko) 2005-04-19 2007-05-17 삼성전자주식회사 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열
US7420442B1 (en) * 2005-06-08 2008-09-02 Sandia Corporation Micromachined microwave signal control device and method for making same
NO20052904L (no) * 2005-06-14 2006-12-15 Thin Film Electronics Asa Et ikke-flyktig elektrisk minnesystem
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
DE602005023597D1 (de) * 2005-07-08 2010-10-28 St Microelectronics Srl Verfahren zur Realisierung einer elektrischen Verbindung in einer elektronischen Halbleitervorrichtung zwischen einem nanometrischen Schaltungsarchitektur und elektronischen Standardkomponenten
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005035590A1 (de) * 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Elektronisches Bauelement
DE102005042166A1 (de) * 2005-09-06 2007-03-15 Polyic Gmbh & Co.Kg Organisches Bauelement und ein solches umfassende elektrische Schaltung
DE102005044306A1 (de) * 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
US7901358B2 (en) 2005-11-02 2011-03-08 Visualsonics Inc. High frequency array ultrasound system
RU2302054C1 (ru) * 2006-02-16 2007-06-27 Борис Аронович Гурович Способ создания пространственно-объемной структуры
JP2007252249A (ja) * 2006-03-22 2007-10-04 Oki Electric Ind Co Ltd 有機化合物合成装置，光照射装置，有機化合物合成用基板および有機化合物の合成方法
US20070279230A1 (en) * 2006-06-01 2007-12-06 Wavezero, Inc. System and Method for Attaching Radiofrequency Identification Chips to Metalized Antenna
JP2008021814A (ja) * 2006-07-13 2008-01-31 Hitachi Ltd 電界効果トランジスタ、有機薄膜トランジスタおよび有機トランジスタの製造方法
TWI300251B (en) * 2006-07-14 2008-08-21 Ind Tech Res Inst Manufacturing method of vertical thin film transistor
US7851786B2 (en) * 2006-09-01 2010-12-14 Alcatel-Lucent Usa Inc. Programmable polyelectrolyte electrical switches
RU2332746C1 (ru) * 2006-12-25 2008-08-27 Юрий Александрович Савиных Способ формирования равномерного электрического поля в электропроводной среде
JP5250981B2 (ja) * 2007-02-21 2013-07-31 セイコーエプソン株式会社 有機デバイスの製造方法並びに電子機器
US9520563B2 (en) * 2007-11-21 2016-12-13 The Board Of Trustees Of The Leland Stanford Junior University Patterning of organic semiconductor materials
RU2363068C1 (ru) * 2008-01-30 2009-07-27 Федеральное Государственное учреждение "Российский научный центр "Курчатовский институт" (РНЦ "Курчатовский институт") Способ формирования композиционной структуры
US9173047B2 (en) 2008-09-18 2015-10-27 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
EP3309823B1 (de) * 2008-09-18 2020-02-12 FUJIFILM SonoSite, Inc. Ultraschallwandler
US9184369B2 (en) 2008-09-18 2015-11-10 Fujifilm Sonosite, Inc. Methods for manufacturing ultrasound transducers and other components
US10441185B2 (en) * 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
CN102656421A (zh) * 2009-12-23 2012-09-05 Imra美国公司 利用结构化光学元件和聚焦光束的激光刻图
US9196509B2 (en) 2010-02-16 2015-11-24 Deca Technologies Inc Semiconductor device and method of adaptive patterning for panelized packaging
US8799845B2 (en) 2010-02-16 2014-08-05 Deca Technologies Inc. Adaptive patterning for panelized packaging
US8656333B1 (en) * 2010-02-16 2014-02-18 Deca Technologies, Inc. Integrated circuit package auto-routing
US20110266436A1 (en) * 2010-04-29 2011-11-03 Battelle Energy Alliance, Llc Apparatuses and methods for forming electromagnetic fields
US8502159B2 (en) * 2010-04-29 2013-08-06 Battelle Energy Alliance, Llc Apparatuses and methods for generating electric fields
RU2461151C1 (ru) * 2011-01-25 2012-09-10 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) Ионный диод для генерации нейтронов
RU2479890C1 (ru) * 2011-12-07 2013-04-20 Открытое акционерное общество "Научно-исследовательский институт полупроводникового машиностроения" Кассета для технологических спутников фотопреобразователей
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
KR102296696B1 (ko) 2012-01-23 2021-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2013161878A (ja) * 2012-02-02 2013-08-19 Renesas Electronics Corp 半導体装置、および半導体装置の製造方法
US9482518B2 (en) 2012-06-07 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for semiconductor device process determination using reflectivity measurement
US8753904B2 (en) * 2012-06-07 2014-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for semiconductor device pattern loading effect characterization
RU2504046C1 (ru) * 2012-07-12 2014-01-10 Открытое акционерное общество "Концерн радиостроения "Вега" Способ получения межсоединений в высокоплотных электронных модулях
CN103338596A (zh) * 2013-06-18 2013-10-02 华南理工大学 一种不用光刻胶的全加成线路板制作方法
US9040316B1 (en) 2014-06-12 2015-05-26 Deca Technologies Inc. Semiconductor device and method of adaptive patterning for panelized packaging with dynamic via clipping
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
JP6504497B2 (ja) * 2015-03-04 2019-04-24 株式会社アルバック タッチパネルおよび透明導電性基板
CN105353590B (zh) * 2015-12-11 2018-01-02 中国电子科技集团公司第四十一研究所 薄膜电路金属化孔内光刻胶的曝光方法及基片承载装置
US10157803B2 (en) 2016-09-19 2018-12-18 Deca Technologies Inc. Semiconductor device and method of unit specific progressive alignment
US10573601B2 (en) 2016-09-19 2020-02-25 Deca Technologies Inc. Semiconductor device and method of unit specific progressive alignment
US10482976B2 (en) * 2017-06-29 2019-11-19 SK Hynix Inc. Memory device performing UV-assisted erase operation
RU185725U1 (ru) * 2018-07-02 2018-12-17 федеральное государственное бюджетное научное учреждение "Научно-исследовательский институт перспективных материалов и технологий" Микроволновое устройство для термообработки полимерных композиционных материалов
RU2700231C1 (ru) * 2018-10-24 2019-09-13 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Способ формирования трехмерных структур топологических элементов функциональных слоев на поверхности подложек
US20220221600A1 (en) * 2019-04-12 2022-07-14 Queen Mary University Of London Radiation detector
CN116801532A (zh) * 2021-05-14 2023-09-22 Oppo广东移动通信有限公司 壳体、其制备方法、可穿戴设备及电子设备

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371883A (en) * 1980-03-14 1983-02-01 The Johns Hopkins University Current controlled bistable electrical organic thin film switching device
US4507672A (en) * 1980-03-14 1985-03-26 The Johns Hopkins University Method of fabricating a current controlled bistable electrical organic thin film switching device
US5407851A (en) 1981-02-23 1995-04-18 Unisys Corporation Method of fabricating an electrically alterable resistive component on an insulating layer above a semiconductor substrate
US4825408A (en) * 1984-04-25 1989-04-25 The Johns Hopkins University Multistate optical switching and memory apparatus using an amphoteric organic charge transfer material
IL86162A (en) * 1988-04-25 1991-11-21 Zvi Orbach Customizable semiconductor devices
US5427941A (en) 1985-08-08 1995-06-27 Schering Corporation Actinomadura brunnea var. antibiotica strains
KR900008647B1 (ko) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 3차원 집적회로와 그의 제조방법
EP0263574A1 (de) * 1986-09-08 1988-04-13 THORN EMI North America Inc. Methode zur Herstellung eines Halbleiterbauelementes und ein solches Bauelement mit zumindest einer selektiv aktivierbaren Leiterbahn
US4806995A (en) * 1987-02-02 1989-02-21 Olin Corporation Optical and electrical switching devices and a polymer composition containing pendant organic charge transfer salt moieties useful in switching devices
EP0344346B1 (de) * 1988-06-01 1995-04-26 Texas Instruments Incorporated Optische Schaltvorrichtung
SU1729243A1 (ru) * 1988-12-01 1995-11-10 Н.И. Татаренко Способ изготовления тонкопленочного вакуумного микроприбора
SU1616439A1 (ru) * 1989-02-03 1996-01-20 Д.М. Боднарь Способ создания многоуровневых межсоединений интегральных схем
JPH07103190B2 (ja) * 1989-02-15 1995-11-08 松下電器産業株式会社 有機導電性薄膜とその製造方法
US5043251A (en) 1989-11-29 1991-08-27 The United States Of America As Represented By The Secretary Of The Navy Process of three dimensional lithography in amorphous polymers
SU1795821A1 (ru) * 1990-05-18 1995-10-10 Казанский физико-технический институт Казанского научного центра АН СССР Способ получения мезотаксиальных слоев дисилицида кобальта в кремнии
US5689428A (en) 1990-09-28 1997-11-18 Texas Instruments Incorporated Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture
SU1826815A1 (ru) * 1991-05-16 1995-03-27 Минский радиотехнический институт Способ рекристаллизации кремниевых слоев
US5282312A (en) * 1991-12-31 1994-02-01 Tessera, Inc. Multi-layer circuit construction methods with customization features
US5378916A (en) 1993-02-17 1995-01-03 Xerox Corporation Color imaging charge-coupled array with multiple photosensitive regions
DE69413436T2 (de) 1993-03-09 1999-05-20 Koninklijke Philips Electronics N.V., Eindhoven Herstellungsverfahren eines Musters von einem elektrisch leitfähigen Polymer auf einer Substratoberfläche und Metallisierung eines solchen Musters
US5427841A (en) 1993-03-09 1995-06-27 U.S. Philips Corporation Laminated structure of a metal layer on a conductive polymer layer and method of manufacturing such a structure
US5567550A (en) * 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
EP1178530A2 (de) 1993-09-30 2002-02-06 Kopin Corporation 3D Prozessor mit Transfer-Dünnschichtschaltungen
US5808351A (en) 1994-02-08 1998-09-15 Prolinx Labs Corporation Programmable/reprogramable structure using fuses and antifuses
US5572409A (en) * 1994-02-08 1996-11-05 Prolinx Labs Corporation Apparatus including a programmable socket adapter for coupling an electronic component to a component socket on a printed circuit board
US5537108A (en) 1994-02-08 1996-07-16 Prolinx Labs Corporation Method and structure for programming fuses
JP3770631B2 (ja) * 1994-10-24 2006-04-26 株式会社ルネサステクノロジ 半導体装置の製造方法
RU2107973C1 (ru) * 1996-03-20 1998-03-27 Омский государственный университет Способ формирования многослойных структур с разными электрофизическими свойствами
US5703394A (en) * 1996-06-10 1997-12-30 Motorola Integrated electro-optical package
EP0968537B1 (de) * 1997-08-22 2012-05-02 Creator Technology B.V. Feld-effekt-transistor, der im wesentlichen aus organischen materialien besteht

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AU2303299A (en) 1999-09-20
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CA2319428A1 (en) 1999-09-10
CN1171301C (zh) 2004-10-13
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US6403396B1 (en) 2002-06-11
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