ATE378682T1 - Magnetspeicher mit schreibsperrauswahl und schreibverfahren dafür - Google Patents

Magnetspeicher mit schreibsperrauswahl und schreibverfahren dafür

Info

Publication number
ATE378682T1
ATE378682T1 AT02785509T AT02785509T ATE378682T1 AT E378682 T1 ATE378682 T1 AT E378682T1 AT 02785509 T AT02785509 T AT 02785509T AT 02785509 T AT02785509 T AT 02785509T AT E378682 T1 ATE378682 T1 AT E378682T1
Authority
AT
Austria
Prior art keywords
layer
magnetic
write
alloy
magnetic memory
Prior art date
Application number
AT02785509T
Other languages
English (en)
Inventor
Jean-Pierre Nozieres
Laurent Ranno
Yann Conraux
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE378682T1 publication Critical patent/ATE378682T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Digital Magnetic Recording (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Digital Computer Display Output (AREA)
AT02785509T 2001-09-20 2002-09-19 Magnetspeicher mit schreibsperrauswahl und schreibverfahren dafür ATE378682T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0112123A FR2829867B1 (fr) 2001-09-20 2001-09-20 Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture

Publications (1)

Publication Number Publication Date
ATE378682T1 true ATE378682T1 (de) 2007-11-15

Family

ID=8867444

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02785509T ATE378682T1 (de) 2001-09-20 2002-09-19 Magnetspeicher mit schreibsperrauswahl und schreibverfahren dafür

Country Status (9)

Country Link
US (1) US7129555B2 (de)
EP (1) EP1438722B1 (de)
JP (1) JP2005503670A (de)
KR (1) KR100908512B1 (de)
CN (1) CN100431043C (de)
AT (1) ATE378682T1 (de)
DE (1) DE60223583T2 (de)
FR (1) FR2829867B1 (de)
WO (1) WO2003025946A1 (de)

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FR2832542B1 (fr) * 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
FR2860910B1 (fr) 2003-10-10 2006-02-10 Commissariat Energie Atomique Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
FR2866750B1 (fr) 2004-02-23 2006-04-21 Centre Nat Rech Scient Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture
FR2870978B1 (fr) * 2004-05-28 2007-02-02 Commissariat Energie Atomique Dispositif d'enregistrement a barriere thermique poreuse
TWI449040B (zh) 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
KR100833080B1 (ko) * 2006-12-27 2008-05-27 동부일렉트로닉스 주식회사 자기 메모리 장치 및 그 제조방법
WO2009074411A1 (en) 2007-12-13 2009-06-18 Crocus Technology Magnetic memory with a thermally assisted writing procedure
US8274820B2 (en) * 2008-02-08 2012-09-25 Fuji Electric Co., Ltd. Magnetic memory element, method of driving same, and nonvolatile storage device
ATE538474T1 (de) 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen
TWI412035B (zh) * 2008-04-17 2013-10-11 Sony Corp Recording method of magnetic memory element
EP2124228B1 (de) 2008-05-20 2014-03-05 Crocus Technology Magnetischer Direktzugriffsspeicher mit einem elliptischen Tunnelübergang
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
WO2010064476A1 (ja) * 2008-12-02 2010-06-10 富士電機ホールディングス株式会社 磁気メモリー素子及び不揮発性記憶装置
JP5321991B2 (ja) * 2009-07-03 2013-10-23 富士電機株式会社 磁気メモリー素子及びその駆動方法
EP2276034B1 (de) * 2009-07-13 2016-04-27 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle
US8472240B2 (en) 2011-05-16 2013-06-25 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
EP2575136B1 (de) * 2011-09-30 2014-12-24 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle mit ferromagnetischen Schichten
JP6117706B2 (ja) * 2012-01-04 2017-04-19 トヨタ自動車株式会社 希土類ナノコンポジット磁石
KR101474665B1 (ko) 2013-09-04 2014-12-19 한양대학교 산학협력단 스핀 전달 토크 자기터널접합 소자, 그 동작 방법 및 그를 채용하는 자기저항 메모리 소자
US10373752B2 (en) 2014-04-02 2019-08-06 Franck Natali Magnetic materials and devices comprising rare earth nitrides
NZ725495A (en) 2014-04-02 2020-05-29 Franck Natali Doped rare earth nitride materials and devices comprising same
KR102204667B1 (ko) 2014-05-07 2021-01-18 한양대학교 산학협력단 저전력으로 쓰기 동작이 가능한 자기 저항 메모리 장치 및 이에 있어서 쓰기 동작 제어 방법
KR101630042B1 (ko) 2014-06-16 2016-06-13 한양대학교 산학협력단 부성 저항을 이용한 자기 저항 메모리 장치
US9792971B2 (en) * 2014-07-02 2017-10-17 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions with rare earth-transition metal layers
FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
CN106297870A (zh) * 2015-06-05 2017-01-04 华北电力大学 带斜面切口环形自由层的磁存储器翻转单元

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JPH0695404B2 (ja) * 1985-12-27 1994-11-24 ソニー株式会社 光磁気記録方法
JPH0423293A (ja) * 1990-05-18 1992-01-27 Toshiba Corp 磁気メモリセル及び磁性薄膜
JP2933056B2 (ja) * 1997-04-30 1999-08-09 日本電気株式会社 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム
WO2000079540A1 (en) * 1999-06-18 2000-12-28 Nve Corporation Magnetic memory coincident thermal pulse data storage
US6134139A (en) * 1999-07-28 2000-10-17 Hewlett-Packard Magnetic memory structure with improved half-select margin
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US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6603678B2 (en) * 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US7001680B2 (en) * 2003-07-29 2006-02-21 Hitachi Global Storage Tech Nl Low resistance magnetic tunnel junction structure

Also Published As

Publication number Publication date
FR2829867A1 (fr) 2003-03-21
KR100908512B1 (ko) 2009-07-20
US20050047206A1 (en) 2005-03-03
CN100431043C (zh) 2008-11-05
US7129555B2 (en) 2006-10-31
EP1438722A1 (de) 2004-07-21
JP2005503670A (ja) 2005-02-03
WO2003025946A1 (fr) 2003-03-27
CN1556997A (zh) 2004-12-22
KR20040035850A (ko) 2004-04-29
DE60223583T2 (de) 2008-09-18
DE60223583D1 (de) 2007-12-27
EP1438722B1 (de) 2007-11-14
FR2829867B1 (fr) 2003-12-19

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