ATE378681T1 - Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnung - Google Patents

Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnung

Info

Publication number
ATE378681T1
ATE378681T1 AT02798773T AT02798773T ATE378681T1 AT E378681 T1 ATE378681 T1 AT E378681T1 AT 02798773 T AT02798773 T AT 02798773T AT 02798773 T AT02798773 T AT 02798773T AT E378681 T1 ATE378681 T1 AT E378681T1
Authority
AT
Austria
Prior art keywords
magnetic
memory arrangement
layer
amorphic
ferri
Prior art date
Application number
AT02798773T
Other languages
English (en)
Inventor
Jean-Pierre Nozieres
Laurent Ranno
Yann Conraux
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE378681T1 publication Critical patent/ATE378681T1/de

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Hard Magnetic Materials (AREA)
AT02798773T 2001-09-20 2002-09-19 Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnung ATE378681T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0112124A FR2829868A1 (fr) 2001-09-20 2001-09-20 Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture

Publications (1)

Publication Number Publication Date
ATE378681T1 true ATE378681T1 (de) 2007-11-15

Family

ID=8867445

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02798773T ATE378681T1 (de) 2001-09-20 2002-09-19 Magnetische speicheranordnung beschreibbar durch spin-polarisierten strom unter benützung von amorphen ferrimagnetischen legierungen, und schreibverfahren in dieser speicheranordnung

Country Status (10)

Country Link
US (1) US7332781B2 (de)
EP (1) EP1430484B1 (de)
JP (1) JP4954445B2 (de)
KR (1) KR100902960B1 (de)
CN (1) CN100592419C (de)
AT (1) ATE378681T1 (de)
AU (1) AU2002362337A1 (de)
DE (1) DE60223573T2 (de)
FR (1) FR2829868A1 (de)
WO (1) WO2003025942A2 (de)

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Also Published As

Publication number Publication date
DE60223573D1 (de) 2007-12-27
DE60223573T2 (de) 2008-09-18
AU2002362337A1 (en) 2003-04-01
CN100592419C (zh) 2010-02-24
JP2005503669A (ja) 2005-02-03
KR100902960B1 (ko) 2009-06-15
KR20040035824A (ko) 2004-04-29
EP1430484B1 (de) 2007-11-14
CN1556998A (zh) 2004-12-22
US7332781B2 (en) 2008-02-19
US20050040433A1 (en) 2005-02-24
JP4954445B2 (ja) 2012-06-13
WO2003025942A3 (fr) 2003-11-20
WO2003025942A2 (fr) 2003-03-27
EP1430484A2 (de) 2004-06-23
FR2829868A1 (fr) 2003-03-21

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