ATE381728T1 - Modulator-schaltkreise - Google Patents

Modulator-schaltkreise

Info

Publication number
ATE381728T1
ATE381728T1 AT04774840T AT04774840T ATE381728T1 AT E381728 T1 ATE381728 T1 AT E381728T1 AT 04774840 T AT04774840 T AT 04774840T AT 04774840 T AT04774840 T AT 04774840T AT E381728 T1 ATE381728 T1 AT E381728T1
Authority
AT
Austria
Prior art keywords
light
influencing
signal
beamlet
sensitive element
Prior art date
Application number
AT04774840T
Other languages
English (en)
Inventor
T Spijker Johannes Christi Van
Marco Wieland
Ernst Habekotte
Der Wilt Floris P Van
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE381728T1 publication Critical patent/ATE381728T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Optical Head (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Amplifiers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
AT04774840T 2003-07-30 2004-07-23 Modulator-schaltkreise ATE381728T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49147503P 2003-07-30 2003-07-30

Publications (1)

Publication Number Publication Date
ATE381728T1 true ATE381728T1 (de) 2008-01-15

Family

ID=34103022

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04774840T ATE381728T1 (de) 2003-07-30 2004-07-23 Modulator-schaltkreise

Country Status (8)

Country Link
US (1) US7019908B2 (de)
EP (1) EP1660945B1 (de)
JP (1) JP4664293B2 (de)
KR (1) KR101100136B1 (de)
CN (1) CN1829945B (de)
AT (1) ATE381728T1 (de)
DE (1) DE602004010824T2 (de)
WO (1) WO2005010618A2 (de)

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US6781691B2 (en) * 2001-02-02 2004-08-24 Tidal Photonics, Inc. Apparatus and methods relating to wavelength conditioning of illumination
DE10319154B4 (de) 2003-04-29 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Maskenloses Lithographiesystem
CA2581668A1 (en) * 2003-09-26 2005-04-07 Tidal Photonics, Inc Apparatus and methods relating to expanded dynamic range imaging endoscope systems
EP1709475A4 (de) * 2003-09-26 2010-08-18 Tidal Photonics Inc Vorrichtungen und verfahren in bezug auf die präzisionssteuerung der beleuchtungs-belichtung
EP1709405A1 (de) * 2003-09-26 2006-10-11 Tidal Photonics, Inc. Vorrichtungen und verfahren in bezug auf verbesserte spektrale messsysteme
US20050234302A1 (en) * 2003-09-26 2005-10-20 Mackinnon Nicholas B Apparatus and methods relating to color imaging endoscope systems
US7425713B2 (en) * 2005-01-14 2008-09-16 Arradiance, Inc. Synchronous raster scanning lithographic system
JP4652829B2 (ja) * 2005-01-26 2011-03-16 キヤノン株式会社 電子線露光装置およびデバイス製造方法
WO2007032671A1 (en) * 2005-09-16 2007-03-22 Mapper Lithography Ip B.V. Lithography system and projection method
US20080260242A1 (en) * 2006-06-22 2008-10-23 Tidal Photonics Inc. Apparatus and methods for measuring and controlling illumination for imaging objects, performances and the like
WO2008008344A2 (en) * 2006-07-11 2008-01-17 Massachusetts Institute Of Technology Microphotonic maskless lithography
WO2008082664A2 (en) 2006-12-29 2008-07-10 Massachusetts Institute Of Technology Fabrication-tolerant waveguides and resonators
US7903909B2 (en) 2007-10-22 2011-03-08 Massachusetts Institute Of Technology Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays
US7583874B2 (en) 2007-10-31 2009-09-01 Massachusetts Institute Of Technology Controlling optical resonances via optically induced potentials
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
US7920770B2 (en) 2008-05-01 2011-04-05 Massachusetts Institute Of Technology Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal
WO2009147202A1 (en) 2008-06-04 2009-12-10 Mapper Lithography Ip B.V. Writing strategy
US8340478B2 (en) 2008-12-03 2012-12-25 Massachusetts Institute Of Technology Resonant optical modulators
WO2010094804A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Lithography machine and substrate handling arrangement
CN102422380A (zh) 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
US8366423B2 (en) 2009-02-22 2013-02-05 Mapper Lithography Ip B.V. Method and arrangement for realizing a vacuum in a vacuum chamber
JP5762981B2 (ja) 2009-02-22 2015-08-12 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子リソグラフィ装置と、真空チャンバー内の真空を生成する方法
CN102460633B (zh) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
EP3144955A1 (de) 2009-05-20 2017-03-22 Mapper Lithography IP B.V. Verfahren zum belichten eines wafers
WO2010138849A1 (en) 2009-05-29 2010-12-02 Massachusetts Institute Of Technology Cavity dynamics compensation in resonant optical modulators
TWI534852B (zh) * 2010-10-26 2016-05-21 瑪波微影Ｉｐ公司 微影系統、調整裝置及製造光纖固定基板之方法
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
TWI562186B (en) 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Charged particle lithography system and method for transferring a pattern onto a surface of a target and modulation device for use in a charged particle lithography system
US9305747B2 (en) * 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
RU2579533C2 (ru) 2010-12-14 2016-04-10 МЭППЕР ЛИТОГРАФИ АйПи Б. В. Литографическая система и способ обработки подложек в такой литографической системе
KR102072200B1 (ko) 2011-04-22 2020-01-31 에이에스엠엘 네델란즈 비.브이. 리소그래피 머신들의 클러스터를 위한 네트워크 아키텍처 및 프로토콜
WO2012144903A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
US9383662B2 (en) 2011-05-13 2016-07-05 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
CN103959919A (zh) 2011-09-28 2014-07-30 迈普尔平版印刷Ip有限公司 等离子产生器
USRE49732E1 (en) 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
NL2010799C2 (en) 2012-05-14 2014-02-03 Mapper Lithography Ip Bv Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method.
WO2013171229A1 (en) 2012-05-14 2013-11-21 Mapper Lithography Ip B.V. Charged particle lithography system and beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010760C2 (en) 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
WO2015024956A1 (en) 2013-08-23 2015-02-26 Mapper Lithography Ip B.V. Drying device for use in a lithography system
RU2644388C2 (ru) 2013-11-14 2018-02-12 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Многоэлектродная охлаждаемая конструкция
NL2014030B1 (en) 2013-12-30 2016-01-08 Mapper Lithography Ip Bv Cathode arrangement, electron gun, and lithograpy system comprising such electron gun.
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6847886B2 (ja) 2018-03-20 2021-03-24 株式会社東芝 荷電粒子ビーム偏向デバイス
FR3080324B1 (fr) * 2018-04-23 2022-04-01 Oberthur Fiduciaire Sas Feuille securisee
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
JP7186739B2 (ja) 2020-03-11 2022-12-09 株式会社東芝 荷電粒子ビーム偏向デバイス

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Also Published As

Publication number Publication date
CN1829945A (zh) 2006-09-06
WO2005010618A2 (en) 2005-02-03
CN1829945B (zh) 2010-05-05
JP2007505332A (ja) 2007-03-08
DE602004010824D1 (de) 2008-01-31
DE602004010824T2 (de) 2008-12-24
US20050062950A1 (en) 2005-03-24
EP1660945B1 (de) 2007-12-19
WO2005010618A3 (en) 2005-04-28
JP4664293B2 (ja) 2011-04-06
EP1660945A2 (de) 2006-05-31
KR101100136B1 (ko) 2011-12-29
KR20060058694A (ko) 2006-05-30
US7019908B2 (en) 2006-03-28

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