ATE382956T1 - Hochspannungs-halbleiteranordnung mit einer feldplattenstruktur - Google Patents

Hochspannungs-halbleiteranordnung mit einer feldplattenstruktur

Info

Publication number
ATE382956T1
ATE382956T1 AT01915329T AT01915329T ATE382956T1 AT E382956 T1 ATE382956 T1 AT E382956T1 AT 01915329 T AT01915329 T AT 01915329T AT 01915329 T AT01915329 T AT 01915329T AT E382956 T1 ATE382956 T1 AT E382956T1
Authority
AT
Austria
Prior art keywords
voltage
regions
high voltage
sustaining zone
plate structure
Prior art date
Application number
AT01915329T
Other languages
English (en)
Inventor
Dalen Rob Van
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE382956T1 publication Critical patent/ATE382956T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Noodles (AREA)
  • Die Bonding (AREA)
AT01915329T 2000-03-23 2001-03-13 Hochspannungs-halbleiteranordnung mit einer feldplattenstruktur ATE382956T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0006957.5A GB0006957D0 (en) 2000-03-23 2000-03-23 A semiconductor device

Publications (1)

Publication Number Publication Date
ATE382956T1 true ATE382956T1 (de) 2008-01-15

Family

ID=9888203

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01915329T ATE382956T1 (de) 2000-03-23 2001-03-13 Hochspannungs-halbleiteranordnung mit einer feldplattenstruktur

Country Status (7)

Country Link
US (1) US6445019B2 (de)
EP (1) EP1208600B1 (de)
JP (1) JP2003528471A (de)
AT (1) ATE382956T1 (de)
DE (1) DE60132158T2 (de)
GB (1) GB0006957D0 (de)
WO (1) WO2001071815A2 (de)

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US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
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US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
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US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
DE10226028A1 (de) * 2002-06-12 2003-12-24 Bosch Gmbh Robert Bauelement und Verfahren zu dessen Herstellung
US20040000672A1 (en) * 2002-06-28 2004-01-01 Kopin Corporation High-power light-emitting diode structures
US7002180B2 (en) * 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
AU2003251539A1 (en) 2002-06-17 2003-12-31 Electrode for p-type gallium nitride-based semiconductors
US6955985B2 (en) 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
DE10313712B4 (de) * 2003-03-27 2008-04-03 Infineon Technologies Ag Laterales mittels Feldeffekt steuerbares Halbleiterbauelement für HF-Anwendungen
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
US7005703B2 (en) * 2003-10-17 2006-02-28 Agere Systems Inc. Metal-oxide-semiconductor device having improved performance and reliability
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7087959B2 (en) * 2004-08-18 2006-08-08 Agere Systems Inc. Metal-oxide-semiconductor device having an enhanced shielding structure
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
WO2006108011A2 (en) 2005-04-06 2006-10-12 Fairchild Semiconductor Corporation Trenched-gate field effect transistors and methods of forming the same
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7465964B2 (en) * 2005-12-30 2008-12-16 Cambridge Semiconductor Limited Semiconductor device in which an injector region is isolated from a substrate
US7473976B2 (en) * 2006-02-16 2009-01-06 Fairchild Semiconductor Corporation Lateral power transistor with self-biasing electrodes
CN101385151B (zh) * 2006-02-16 2013-07-24 飞兆半导体公司 具有自偏压电极的横向功率器件
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
EP2109892A4 (de) * 2007-01-09 2011-03-23 Maxpower Semiconductor Inc Halbleiterbauelement
CN101868856B (zh) 2007-09-21 2014-03-12 飞兆半导体公司 用于功率器件的超结结构及制造方法
US7956412B2 (en) * 2007-12-04 2011-06-07 International Business Machines Corporation Lateral diffusion field effect transistor with a trench field plate
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
JP5280056B2 (ja) * 2008-01-10 2013-09-04 シャープ株式会社 Ｍｏｓ電界効果トランジスタ
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8232516B2 (en) 2009-07-31 2012-07-31 International Business Machines Corporation Avalanche impact ionization amplification devices
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8466492B1 (en) * 2012-01-31 2013-06-18 Infineon Technologies Austria Ag Semiconductor device with edge termination structure
US9520367B2 (en) * 2014-08-20 2016-12-13 Freescale Semiconductor, Inc. Trenched Faraday shielding
CN106549052B (zh) * 2015-09-17 2021-05-25 联华电子股份有限公司 横向扩散金属氧化物半导体晶体管及其制作方法
CN105529369B (zh) * 2016-03-08 2019-05-14 中国电子科技集团公司第二十四研究所 一种半导体元胞结构和功率半导体器件
FR3050573B1 (fr) * 2016-04-22 2019-10-18 Exagan Dispositif avec plaques de champ segmentees
CN110518056B (zh) * 2019-08-02 2021-06-01 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制造方法
CN113130632B (zh) 2019-12-31 2022-08-12 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制备方法
CN114695510B (zh) * 2020-12-30 2025-08-29 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制造方法
US12598799B2 (en) * 2021-08-31 2026-04-07 Texas Instruments Incorporated High voltage finger layout transistor
CN114242593A (zh) * 2021-12-13 2022-03-25 上海华虹宏力半导体制造有限公司 一种rfldmos器件及其制造方法
KR102929963B1 (ko) * 2022-01-13 2026-02-24 주식회사 디비하이텍 원형 ldmos 소자 및 그 제조 방법

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DE19800647C1 (de) * 1998-01-09 1999-05-27 Siemens Ag SOI-Hochspannungsschalter

Also Published As

Publication number Publication date
WO2001071815A2 (en) 2001-09-27
US6445019B2 (en) 2002-09-03
GB0006957D0 (en) 2000-05-10
US20010050375A1 (en) 2001-12-13
EP1208600B1 (de) 2008-01-02
EP1208600A2 (de) 2002-05-29
JP2003528471A (ja) 2003-09-24
DE60132158D1 (de) 2008-02-14
WO2001071815A3 (en) 2002-03-28
DE60132158T2 (de) 2009-01-02

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