ATE386099T1 - Reinigungsmittel, reinigungs- und herstellungsverfahren für halbleiterscheiben - Google Patents

Reinigungsmittel, reinigungs- und herstellungsverfahren für halbleiterscheiben

Info

Publication number
ATE386099T1
ATE386099T1 AT03778777T AT03778777T ATE386099T1 AT E386099 T1 ATE386099 T1 AT E386099T1 AT 03778777 T AT03778777 T AT 03778777T AT 03778777 T AT03778777 T AT 03778777T AT E386099 T1 ATE386099 T1 AT E386099T1
Authority
AT
Austria
Prior art keywords
cleaning
cleaning agent
group
production process
linear
Prior art date
Application number
AT03778777T
Other languages
English (en)
Inventor
Masahiro Amemiya
Yoshio Tanaka
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE386099T1 publication Critical patent/ATE386099T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
AT03778777T 2002-12-12 2003-12-10 Reinigungsmittel, reinigungs- und herstellungsverfahren für halbleiterscheiben ATE386099T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002361149A JP4350364B2 (ja) 2002-12-12 2002-12-12 洗浄剤組成物、半導体ウェーハの洗浄方法および製造方法

Publications (1)

Publication Number Publication Date
ATE386099T1 true ATE386099T1 (de) 2008-03-15

Family

ID=32760004

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03778777T ATE386099T1 (de) 2002-12-12 2003-12-10 Reinigungsmittel, reinigungs- und herstellungsverfahren für halbleiterscheiben

Country Status (10)

Country Link
US (1) US20070010411A1 (de)
EP (1) EP1572856B1 (de)
JP (1) JP4350364B2 (de)
KR (1) KR100725891B1 (de)
CN (1) CN1723273A (de)
AT (1) ATE386099T1 (de)
AU (1) AU2003285760A1 (de)
DE (1) DE60319132T2 (de)
TW (1) TW200414340A (de)
WO (1) WO2004053045A1 (de)

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TWI538033B (zh) * 2005-01-27 2016-06-11 安堤格里斯公司 半導體基板處理用之組成物
DE102005018501A1 (de) * 2005-04-21 2006-10-26 Clariant Produkte (Deutschland) Gmbh Wasch- und Reinigungsmittel enthaltend Alkohol-Ethoxylat-Propoxylate
JP2006352075A (ja) * 2005-05-17 2006-12-28 Sumitomo Electric Ind Ltd 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
JP2007208145A (ja) * 2006-02-03 2007-08-16 Sanken Electric Co Ltd 半導体装置の製造方法
SG139699A1 (en) * 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
JP4963948B2 (ja) * 2006-12-11 2012-06-27 花王株式会社 洗浄剤組成物
JP5403890B2 (ja) * 2007-10-02 2014-01-29 花王株式会社 ハードディスク用基板用の洗浄剤組成物
JP5152851B2 (ja) * 2008-04-17 2013-02-27 国立大学法人東北大学 半導体装置の製造方法
JP2010135525A (ja) * 2008-12-04 2010-06-17 Siltronic Ag 半導体ウエハの洗浄方法
US7700535B1 (en) * 2009-01-12 2010-04-20 Ppt Research Wafer/Ingot cleaning in wire saw cutting comprising an ethoxylated alcohol/polyalkylsiloxane mixture
JP5443863B2 (ja) * 2009-07-09 2014-03-19 株式会社Ａｄｅｋａ 銅含有材料用エッチング剤組成物及び銅含有材料のエッチング方法
JP4743340B1 (ja) * 2009-10-28 2011-08-10 セントラル硝子株式会社 保護膜形成用薬液
TWI392729B (zh) * 2009-12-31 2013-04-11 太陽能晶片洗劑
JP5858597B2 (ja) * 2010-01-29 2016-02-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド タングステン配線半導体用洗浄剤
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
CN107039516B (zh) * 2011-05-18 2020-07-10 住友电气工业株式会社 化合物半导体衬底
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
JP2013133458A (ja) * 2011-12-27 2013-07-08 Idemitsu Kosan Co Ltd 水性洗浄剤
CN103882444A (zh) * 2012-12-19 2014-06-25 安集微电子（上海）有限公司 一种清洗液及其应用
CN104531377B (zh) * 2014-12-26 2017-12-29 长沙艾森设备维护技术有限公司 一种光学玻璃清洗剂
CN104576319A (zh) * 2015-01-04 2015-04-29 上海申和热磁电子有限公司 去除硅片背金工艺后粘结片表面粘结剂的清洗方法
CN104893848B (zh) * 2015-06-09 2018-04-03 武汉宜田科技发展有限公司 一种易降解环保型硅片清洗剂及其制备方法
KR101765212B1 (ko) 2015-07-17 2017-08-04 주식회사 위즈켐 천연계 태양광 웨이퍼 세정제 조성물
PL3359515T3 (pl) 2015-10-07 2020-07-27 Elementis Specialties, Inc. Środek zwilżający i przeciwpieniący
KR102027795B1 (ko) * 2016-01-05 2019-10-02 후지필름 가부시키가이샤 처리액, 기판의 세정 방법, 및 반도체 디바이스의 제조 방법
WO2017119334A1 (ja) * 2016-01-05 2017-07-13 富士フイルム株式会社 処理液、基板の洗浄方法および半導体デバイスの製造方法
CN112838122A (zh) * 2017-05-26 2021-05-25 住友电气工业株式会社 Iii-v族化合物半导体基板和带有外延层的iii-v族化合物半导体基板
TWI665174B (zh) * 2017-09-01 2019-07-11 谷崧精密工業股份有限公司 陶瓷塑料複合體及其製造方法
KR101957875B1 (ko) * 2018-06-14 2019-03-13 영창케미칼 주식회사 극자외선 리소그래피용 공정액 조성물 및 이를 이용하는 패턴 형성 방법
JP7166819B2 (ja) * 2018-07-13 2022-11-08 Ｃｍｃマテリアルズ株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
KR102062342B1 (ko) 2019-03-08 2020-01-03 영창케미칼 주식회사 반도체 웨이퍼 세정액 조성물 및 그를 이용한 세정방법
CN111015369A (zh) * 2019-10-24 2020-04-17 通威太阳能(眉山)有限公司 用于硅片背面的抛光液添加剂、抛光液以及背钝化晶硅太阳能电池的硅片的抛光方法
JP2023174600A (ja) * 2022-05-27 2023-12-07 花王株式会社 接着剤用洗浄剤組成物
CN115156170A (zh) * 2022-07-11 2022-10-11 广东先导微电子科技有限公司 一种锑化铟晶片的清洗方法

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* Cited by examiner, † Cited by third party
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KR950013923B1 (ko) * 1988-06-22 1995-11-18 아사히가라스 가부시끼가이샤 할로겐화 탄화수소 용매 및 그의 용도
US5302313A (en) * 1988-06-22 1994-04-12 Asahi Glass Company Ltd. Halogenated hydrocarbon solvents
DE19853961C2 (de) * 1998-11-23 2001-03-01 Siemens Ag Verfahren zum Waschen von Reinraumkleidung
TWI221946B (en) * 1999-01-07 2004-10-11 Kao Corp Resist developer
TWI243204B (en) * 2000-02-04 2005-11-11 Sumitomo Chemical Co Electronic parts cleaning solution
US6417147B2 (en) * 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate

Also Published As

Publication number Publication date
TW200414340A (en) 2004-08-01
DE60319132T2 (de) 2009-02-05
WO2004053045A1 (en) 2004-06-24
AU2003285760A1 (en) 2004-06-30
JP2004189943A (ja) 2004-07-08
CN1723273A (zh) 2006-01-18
US20070010411A1 (en) 2007-01-11
DE60319132D1 (de) 2008-03-27
EP1572856B1 (de) 2008-02-13
KR20050085532A (ko) 2005-08-29
KR100725891B1 (ko) 2007-06-08
JP4350364B2 (ja) 2009-10-21
EP1572856A1 (de) 2005-09-14

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