ATE386340T1 - Halbleiterbauelement, verfahren zur herstellung einer quantentopfstruktur und halbleiterbauelement eine solche quantentopfstruktur beinhaltend - Google Patents

Halbleiterbauelement, verfahren zur herstellung einer quantentopfstruktur und halbleiterbauelement eine solche quantentopfstruktur beinhaltend

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Publication number
ATE386340T1
ATE386340T1 AT04744416T AT04744416T ATE386340T1 AT E386340 T1 ATE386340 T1 AT E386340T1 AT 04744416 T AT04744416 T AT 04744416T AT 04744416 T AT04744416 T AT 04744416T AT E386340 T1 ATE386340 T1 AT E386340T1
Authority
AT
Austria
Prior art keywords
quantum well
well structure
semiconductor component
producing
dielectric constant
Prior art date
Application number
AT04744416T
Other languages
English (en)
Inventor
Youri Ponomarev
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE386340T1 publication Critical patent/ATE386340T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
AT04744416T 2003-07-02 2004-06-29 Halbleiterbauelement, verfahren zur herstellung einer quantentopfstruktur und halbleiterbauelement eine solche quantentopfstruktur beinhaltend ATE386340T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03101982 2003-07-02

Publications (1)

Publication Number Publication Date
ATE386340T1 true ATE386340T1 (de) 2008-03-15

Family

ID=33560840

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04744416T ATE386340T1 (de) 2003-07-02 2004-06-29 Halbleiterbauelement, verfahren zur herstellung einer quantentopfstruktur und halbleiterbauelement eine solche quantentopfstruktur beinhaltend

Country Status (9)

Country Link
US (2) US7535015B2 (de)
EP (1) EP1644986B1 (de)
JP (1) JP2007521650A (de)
KR (1) KR20060028479A (de)
CN (1) CN1816914B (de)
AT (1) ATE386340T1 (de)
DE (1) DE602004011776T2 (de)
TW (1) TW200504812A (de)
WO (1) WO2005004241A1 (de)

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US20040161006A1 (en) * 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
US20060011905A1 (en) * 2003-06-26 2006-01-19 Rj Mears, Llc Semiconductor device comprising a superlattice dielectric interface layer
JP2006027929A (ja) * 2004-07-13 2006-02-02 Toshiba Ceramics Co Ltd 電気光学的単結晶薄膜成長用基板及びその製造方法
US20080135832A1 (en) * 2005-01-18 2008-06-12 Shye Shapira Apparatus And Method For Control Of Tunneling In A Small-Scale Electronic Structure
US7443561B2 (en) * 2005-06-08 2008-10-28 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Deep quantum well electro-absorption modulator
US7544572B2 (en) 2005-11-30 2009-06-09 Advanced Micro Devices, Inc. Multi-operational mode transistor with multiple-channel device structure
US20070166928A1 (en) * 2005-12-22 2007-07-19 Rj Mears, Llc Method for making an electronic device including a selectively polable superlattice
JP2009535861A (ja) * 2006-05-01 2009-10-01 メアーズ テクノロジーズ， インコーポレイテッド ドーパントを阻止する超格子を有する半導体素子及び関連方法
EP2068355A4 (de) * 2006-09-29 2010-02-24 Fujitsu Ltd Verbund-halbleiteranordnung und prozess zu ihrer herstellung
US7928425B2 (en) * 2007-01-25 2011-04-19 Mears Technologies, Inc. Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods
US8026507B2 (en) * 2008-08-20 2011-09-27 Texas Instruments Incorporated Two terminal quantum device using MOS capacitor structure
US9159565B2 (en) * 2009-08-20 2015-10-13 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with band to band tunneling and method of manufacture thereof
CN102194859B (zh) * 2010-03-05 2013-05-01 中国科学院微电子研究所 高迁移率ⅲ-ⅴ族半导体mos界面结构
US9978650B2 (en) 2013-03-13 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor channel
KR101657872B1 (ko) * 2014-12-23 2016-09-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 개선된 트랜지스터 채널을 포함하는 반도체 디바이스 및 그 제조방법
WO2018004554A1 (en) * 2016-06-29 2018-01-04 Intel Corporation Quantum dot devices with modulation doped stacks
CN109564936B (zh) * 2016-08-10 2023-02-17 英特尔公司 量子点阵列装置
US10056485B2 (en) * 2016-12-29 2018-08-21 Imec Vzw Semiconductor devices with gate-controlled energy filtering
US10566191B1 (en) * 2018-08-30 2020-02-18 Atomera Incorporated Semiconductor device including superlattice structures with reduced defect densities
US10811498B2 (en) 2018-08-30 2020-10-20 Atomera Incorporated Method for making superlattice structures with reduced defect densities
US20200135489A1 (en) * 2018-10-31 2020-04-30 Atomera Incorporated Method for making a semiconductor device including a superlattice having nitrogen diffused therein
KR102575699B1 (ko) 2021-10-12 2023-09-07 충북대학교 산학협력단 나노시트 반도체 소자 제조방법 및 이에 의하여 제조된 나노시트 반도체 소자

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US4695857A (en) * 1983-06-24 1987-09-22 Nec Corporation Superlattice semiconductor having high carrier density
US4665412A (en) * 1985-06-19 1987-05-12 Ga Technologies Inc. Coupled heterostructure superlattice devices
US4908678A (en) * 1986-10-08 1990-03-13 Semiconductor Energy Laboratory Co., Ltd. FET with a super lattice channel
EP0558089B1 (de) * 1992-02-28 2002-06-05 Hitachi, Ltd. Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger
US5932890A (en) * 1992-05-08 1999-08-03 The Furukawa Electric Co., Ltd. Field effect transistor loaded with multiquantum barrier
JPH0675257A (ja) * 1992-07-30 1994-03-18 Internatl Business Mach Corp <Ibm> 非線形光学装置
EP0606093B1 (de) * 1993-01-07 1997-12-17 Nec Corporation Integrierte optische Halbleiteranordnung und Herstellungsverfahren
USH1570H (en) * 1993-03-31 1996-08-06 The United States Of America As Represented By The Secretary Of The Army Variable lateral quantum confinement transistor
US6376337B1 (en) * 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
US6069368A (en) * 1997-12-15 2000-05-30 Texas Instruments Incorporated Method for growing high-quality crystalline Si quantum wells for RTD structures
US6906800B2 (en) * 2003-03-14 2005-06-14 The United States Of America As Represented By The Secretary Of The Air Force Polarimeter using quantum well stacks separated by gratings

Also Published As

Publication number Publication date
TW200504812A (en) 2005-02-01
WO2005004241A1 (en) 2005-01-13
JP2007521650A (ja) 2007-08-02
US20090209067A1 (en) 2009-08-20
US7951684B2 (en) 2011-05-31
EP1644986A1 (de) 2006-04-12
DE602004011776D1 (de) 2008-03-27
DE602004011776T2 (de) 2009-02-19
EP1644986B1 (de) 2008-02-13
US7535015B2 (en) 2009-05-19
US20060157685A1 (en) 2006-07-20
CN1816914A (zh) 2006-08-09
CN1816914B (zh) 2010-12-29
KR20060028479A (ko) 2006-03-29

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