ATE387012T1 - Kontaktierungsstruktur einer integrierten leistungsschaltung - Google Patents

Kontaktierungsstruktur einer integrierten leistungsschaltung

Info

Publication number
ATE387012T1
ATE387012T1 AT01000318T AT01000318T ATE387012T1 AT E387012 T1 ATE387012 T1 AT E387012T1 AT 01000318 T AT01000318 T AT 01000318T AT 01000318 T AT01000318 T AT 01000318T AT E387012 T1 ATE387012 T1 AT E387012T1
Authority
AT
Austria
Prior art keywords
contact pads
power
transistor
active components
metals
Prior art date
Application number
AT01000318T
Other languages
English (en)
Inventor
Taylor R Efland
Sameer Pendharkar
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of ATE387012T1 publication Critical patent/ATE387012T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AT01000318T 2000-07-27 2001-07-27 Kontaktierungsstruktur einer integrierten leistungsschaltung ATE387012T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22105100P 2000-07-27 2000-07-27

Publications (1)

Publication Number Publication Date
ATE387012T1 true ATE387012T1 (de) 2008-03-15

Family

ID=22826133

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01000318T ATE387012T1 (de) 2000-07-27 2001-07-27 Kontaktierungsstruktur einer integrierten leistungsschaltung

Country Status (5)

Country Link
US (1) US7045903B2 (de)
EP (1) EP1176640B1 (de)
JP (1) JP2002164437A (de)
AT (1) ATE387012T1 (de)
DE (1) DE60132855T2 (de)

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US6104761A (en) 1998-08-28 2000-08-15 Sicom, Inc. Constrained-envelope digital-communications transmission system and method therefor
DE10200932A1 (de) * 2002-01-12 2003-07-24 Philips Intellectual Property Diskretes Halbleiterbauelement
US6972464B2 (en) * 2002-10-08 2005-12-06 Great Wall Semiconductor Corporation Power MOSFET
JP4396200B2 (ja) * 2002-10-30 2010-01-13 株式会社デンソー 半導体装置
JP2004303861A (ja) * 2003-03-31 2004-10-28 Renesas Technology Corp 半導体装置およびその製造方法
US7005369B2 (en) * 2003-08-21 2006-02-28 Intersil American Inc. Active area bonding compatible high current structures
US8274160B2 (en) 2003-08-21 2012-09-25 Intersil Americas Inc. Active area bonding compatible high current structures
EP1603160A2 (de) * 2004-06-01 2005-12-07 Matsushita Electric Industrial Co., Ltd. Integrierte Halbleiterschaltungsanordnung
KR100615579B1 (ko) 2004-09-20 2006-08-25 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 파워 라인 배치 방법
KR100675275B1 (ko) * 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
US7404513B2 (en) * 2004-12-30 2008-07-29 Texas Instruments Incorporated Wire bonds having pressure-absorbing balls
US7476976B2 (en) * 2005-02-23 2009-01-13 Texas Instruments Incorporated Flip chip package with advanced electrical and thermal properties for high current designs
US7483248B1 (en) * 2005-05-19 2009-01-27 Sun Microsystems, Inc. Method and apparatus for detecting current changes in integrated circuits
KR100849640B1 (ko) 2005-09-16 2008-08-01 가부시키가이샤 리코 반도체 장치
DE102006050087A1 (de) 2006-10-24 2008-04-30 Austriamicrosystems Ag Halbleiterkörper und Verfahren zum Entwurf eines Halbleiterkörpers mit einer Anschlussleitung
US7667316B2 (en) * 2006-10-31 2010-02-23 Panasonic Corporation Semiconductor integrated circuit and method for manufacturing the same
JP4814770B2 (ja) * 2006-12-01 2011-11-16 パナソニック株式会社 半導体集積回路
JP5054359B2 (ja) * 2006-12-01 2012-10-24 パナソニック株式会社 半導体集積回路及びその製造方法
JP5066928B2 (ja) * 2007-02-08 2012-11-07 株式会社デンソー 半導体装置
JP2008218442A (ja) * 2007-02-28 2008-09-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその製造方法
DE102007036566A1 (de) * 2007-08-03 2009-02-19 Siemens Ag Federkontaktierung von elektrischen Kontaktflächen eines elektronischen Bauteils
US7947592B2 (en) * 2007-12-14 2011-05-24 Semiconductor Components Industries, Llc Thick metal interconnect with metal pad caps at selective sites and process for making the same
JP5326151B2 (ja) * 2007-12-26 2013-10-30 セイコーＮｐｃ株式会社 パワーｍｏｓトランジスタ
DE102007063268A1 (de) * 2007-12-31 2009-07-09 Advanced Micro Devices, Inc., Sunnyvale Drahtverbindung mit aluminiumfreien Metallisierungsschichten durch Oberflächenkonditionierung
US20100059795A1 (en) * 2008-09-08 2010-03-11 Firas Azrai Vertical current transport in a power converter circuit
KR101107659B1 (ko) * 2010-02-05 2012-01-20 주식회사 하이닉스반도체 반도체 패키지
US8240218B2 (en) * 2010-03-01 2012-08-14 Infineon Technologies Ag Stress sensing devices and methods
US8426971B2 (en) 2010-08-27 2013-04-23 Diodes FabTech, Inc. Top tri-metal system for silicon power semiconductor devices
JP5558336B2 (ja) 2010-12-27 2014-07-23 株式会社東芝 半導体装置
JP5580230B2 (ja) 2011-02-28 2014-08-27 パナソニック株式会社 半導体装置
US9006099B2 (en) 2011-06-08 2015-04-14 Great Wall Semiconductor Corporation Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump
US9105552B2 (en) 2011-10-31 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US8823180B2 (en) * 2011-12-28 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
US8859416B2 (en) * 2012-04-24 2014-10-14 GlobalFoundries, Inc. Software and method for via spacing in a semiconductor device
US9171790B2 (en) 2012-05-30 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of packaging semiconductor dies
WO2013179547A1 (ja) * 2012-06-01 2013-12-05 パナソニック株式会社 パワー半導体装置
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US10380308B2 (en) * 2018-01-10 2019-08-13 Qualcomm Incorporated Power distribution networks (PDNs) using hybrid grid and pillar arrangements
TWI748233B (zh) * 2018-08-29 2021-12-01 美商高效電源轉換公司 具有降低導通電阻之橫向功率元件
JP7177660B2 (ja) * 2018-10-26 2022-11-24 株式会社東芝 半導体装置
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EP0646959B1 (de) * 1993-09-30 2001-08-16 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Verfahren zur Metallisierung und Verbindung bei der Herstellung von Leistungshalbleiterbauelementen
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JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
JP2000183104A (ja) * 1998-12-15 2000-06-30 Texas Instr Inc <Ti> 集積回路上でボンディングするためのシステム及び方法
US6291331B1 (en) * 1999-10-04 2001-09-18 Taiwan Semiconductor Manufacturing Company Re-deposition high compressive stress PECVD oxide film after IMD CMP process to solve more than 5 metal stack via process IMD crack issue

Also Published As

Publication number Publication date
DE60132855T2 (de) 2009-02-26
EP1176640A2 (de) 2002-01-30
EP1176640A3 (de) 2004-03-17
JP2002164437A (ja) 2002-06-07
DE60132855D1 (de) 2008-04-03
EP1176640B1 (de) 2008-02-20
US20020011674A1 (en) 2002-01-31
US7045903B2 (en) 2006-05-16

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