ATE388520T1 - Elektronische einrichtung - Google Patents

Elektronische einrichtung

Info

Publication number
ATE388520T1
ATE388520T1 AT05732041T AT05732041T ATE388520T1 AT E388520 T1 ATE388520 T1 AT E388520T1 AT 05732041 T AT05732041 T AT 05732041T AT 05732041 T AT05732041 T AT 05732041T AT E388520 T1 ATE388520 T1 AT E388520T1
Authority
AT
Austria
Prior art keywords
substrate
region
pin diode
electronic device
inductor
Prior art date
Application number
AT05732041T
Other languages
English (en)
Inventor
Dekker Arnoldus Den
Johannes Dijkhuis
Nicolas Pulsford
Beek Jozef Van
Freddy Roozeboom
Antonius Kemmeren
Johan Klootwijk
Maarten Nollen
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE388520T1 publication Critical patent/ATE388520T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0123—Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Glass Compositions (AREA)
  • Sheets, Magazines, And Separation Thereof (AREA)
  • Liquid Crystal Substances (AREA)
AT05732041T 2004-05-06 2005-05-03 Elektronische einrichtung ATE388520T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04101966 2004-05-06

Publications (1)

Publication Number Publication Date
ATE388520T1 true ATE388520T1 (de) 2008-03-15

Family

ID=34965733

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05732041T ATE388520T1 (de) 2004-05-06 2005-05-03 Elektronische einrichtung

Country Status (7)

Country Link
US (1) US8901703B2 (de)
EP (1) EP1745545B1 (de)
JP (1) JP5026257B2 (de)
CN (1) CN100533967C (de)
AT (1) ATE388520T1 (de)
DE (1) DE602005005189T2 (de)
WO (1) WO2005109636A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090267182A1 (en) * 2006-05-18 2009-10-29 Nxp B.V. Method of increasing the quality factor of an inductor in a seimiconductor device
KR100747657B1 (ko) 2006-10-26 2007-08-08 삼성전자주식회사 매크로 및 마이크로 주파수 튜닝이 가능한 반도체 소자 및이를 갖는 안테나와 주파수 튜닝 회로
EP2384521B1 (de) * 2008-12-31 2018-09-19 Sierra Nevada Corporation Mikrowellenschaltanordnung mit monolithischem halbleiter
US8237243B2 (en) 2009-03-18 2012-08-07 International Business Machines Corporation On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit
JP5481127B2 (ja) * 2009-08-19 2014-04-23 株式会社ジャパンディスプレイ センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器
JP6425633B2 (ja) * 2015-08-21 2018-11-21 住重アテックス株式会社 半導体装置および半導体装置の製造方法
US20210220599A1 (en) 2020-01-21 2021-07-22 Wearair Ventures, Inc. Efficient enriched oxygen airflow systems and methods
US12569639B2 (en) 2020-01-21 2026-03-10 Wearair Ventures, Inc. Efficient enriched oxygen airflow systems and methods

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4474623A (en) * 1982-04-26 1984-10-02 Raytheon Company Method of passivating a semiconductor body
US4810980A (en) * 1987-06-04 1989-03-07 Texas Instruments, Inc. Matched variable attenuation switched limiter
US5280194A (en) 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
GB2228616B (en) 1989-02-22 1992-11-04 Stc Plc Opto-electronic device
JP3120938B2 (ja) * 1994-02-16 2000-12-25 松下電子工業株式会社 半導体集積装置およびその製造方法
JP3959125B2 (ja) 1994-09-14 2007-08-15 株式会社東芝 半導体装置
DE19533206A1 (de) 1995-09-08 1997-03-13 Daimler Benz Ag Planare PIN-Diode und Verfahren zu deren Herstellung
JPH09214278A (ja) * 1996-01-30 1997-08-15 Nec Corp Ｐｉｎダイオード可変減衰器
TW392392B (en) 1997-04-03 2000-06-01 Lucent Technologies Inc High frequency apparatus including a low loss substrate
US5986517A (en) * 1998-01-06 1999-11-16 Trw Inc. Low-loss air suspended radially combined patch for N-way RF switch
JP3309959B2 (ja) 1998-04-16 2002-07-29 日本電気株式会社 半導体装置
DE19821726C1 (de) * 1998-05-14 1999-09-09 Texas Instruments Deutschland Ingegrierte CMOS-Schaltung für die Verwendung bei hohen Frequenzen
ATE533229T1 (de) * 2000-02-15 2011-11-15 Nxp Bv Elektronische vorrichtung
EP1137055A1 (de) 2000-03-24 2001-09-26 Infineon Technologies AG Verfahren zur Herstellung einer Hochfrequenz-Halbleiterstruktur und Hochfrequenz-Halbleiterstruktur
JP2001352079A (ja) 2000-06-07 2001-12-21 Nec Corp ダイオードおよびその製造方法
EP1187206B1 (de) 2000-09-05 2009-12-09 Nxp B.V. Integrierte elektromagnetische Abschirmvorrichtung
US6660616B2 (en) * 2001-01-31 2003-12-09 Texas Instruments Incorporated P-i-n transit time silicon-on-insulator device
DE10127952A1 (de) * 2001-06-08 2002-12-19 Infineon Technologies Ag Laterale PIN-Diode und Verfahren zur Herstellung derselben
JP4299488B2 (ja) 2001-12-07 2009-07-22 太陽誘電株式会社 高周波モジュールおよびその製造方法
US6620673B1 (en) * 2002-03-08 2003-09-16 Alpine Microsystems, Inc. Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide
JP2004014658A (ja) 2002-06-05 2004-01-15 Renesas Technology Corp 半導体装置およびその製造方法
JP4004357B2 (ja) * 2002-08-29 2007-11-07 新電元工業株式会社 ダイオード
AU2003267704A1 (en) 2002-10-14 2004-05-04 Koninklijke Philips Electronics N.V. Transmit and receive antenna switch
US7132723B2 (en) * 2002-11-14 2006-11-07 Raytheon Company Micro electro-mechanical system device with piezoelectric thin film actuator
ATE456194T1 (de) 2003-07-22 2010-02-15 Nxp Bv Antennenschalter mit adaptivem filter
JP2007231072A (ja) 2006-02-28 2007-09-13 Three M Innovative Properties Co コーティング組成物及びそれを使用した物品
JP2009214278A (ja) 2008-03-13 2009-09-24 Nikon Corp 研削用砥石

Also Published As

Publication number Publication date
EP1745545A1 (de) 2007-01-24
CN1951004A (zh) 2007-04-18
US20070228514A1 (en) 2007-10-04
JP2007536759A (ja) 2007-12-13
EP1745545B1 (de) 2008-03-05
DE602005005189D1 (de) 2008-04-17
DE602005005189T2 (de) 2009-03-19
CN100533967C (zh) 2009-08-26
US8901703B2 (en) 2014-12-02
WO2005109636A1 (en) 2005-11-17
JP5026257B2 (ja) 2012-09-12

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Legal Events

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