ATE395312T1 - Ferromagnetisches material - Google Patents
Ferromagnetisches materialInfo
- Publication number
- ATE395312T1 ATE395312T1 AT04708955T AT04708955T ATE395312T1 AT E395312 T1 ATE395312 T1 AT E395312T1 AT 04708955 T AT04708955 T AT 04708955T AT 04708955 T AT04708955 T AT 04708955T AT E395312 T1 ATE395312 T1 AT E395312T1
- Authority
- AT
- Austria
- Prior art keywords
- kelvin
- atomic percent
- semiconductor material
- ferromagnetic
- doped
- Prior art date
Links
- 239000003302 ferromagnetic material Substances 0.000 title 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 3
- 239000011787 zinc oxide Substances 0.000 abstract 3
- 230000005294 ferromagnetic effect Effects 0.000 abstract 2
- 239000011572 manganese Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
- H01F41/205—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation by laser ablation, e.g. pulsed laser deposition [PLD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/402—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of II-VI type, e.g. Zn1-x Crx Se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/193—Magnetic semiconductor compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0246—Manufacturing of magnetic circuits by moulding or by pressing powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B2235/3267—MnO2
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9653—Translucent or transparent ceramics other than alumina
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Molecular Biology (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Hard Magnetic Materials (AREA)
- Developing Agents For Electrophotography (AREA)
- Valve Device For Special Equipments (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0300352A SE0300352D0 (sv) | 2003-02-06 | 2003-02-06 | Ferromagnetism in semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE395312T1 true ATE395312T1 (de) | 2008-05-15 |
Family
ID=20290360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04708955T ATE395312T1 (de) | 2003-02-06 | 2004-02-06 | Ferromagnetisches material |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7527983B2 (de) |
| EP (1) | EP1601629B1 (de) |
| JP (1) | JP2006517175A (de) |
| KR (1) | KR20050110627A (de) |
| CN (1) | CN100430335C (de) |
| AT (1) | ATE395312T1 (de) |
| DE (1) | DE602004013735D1 (de) |
| SE (1) | SE0300352D0 (de) |
| WO (1) | WO2004069767A1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE0300352D0 (sv) * | 2003-02-06 | 2003-02-06 | Winto Konsult Ab | Ferromagnetism in semiconductors |
| TWI237314B (en) * | 2004-06-24 | 2005-08-01 | Ind Tech Res Inst | Doping method for forming quantum dots |
| CN103194798B (zh) * | 2013-04-02 | 2015-08-26 | 浙江大学 | 一种过渡金属掺杂ZnO基铁磁多晶薄膜及其制备方法 |
| KR101661025B1 (ko) * | 2014-09-03 | 2016-09-29 | 한국세라믹기술원 | 반도성 세라믹스 조성물의 제조방법 및 그의 세라믹스 기판 |
| US9966901B2 (en) * | 2015-11-19 | 2018-05-08 | Samsung Electronics Co., Ltd. | Spin-torque oscillator based on easy-cone anisotropy |
| CN111809158A (zh) * | 2020-07-22 | 2020-10-23 | 延安大学 | 一种过渡金属掺杂ZnO纳米线阵列、制备方法及其应用 |
| CN113308669B (zh) * | 2021-04-26 | 2023-06-23 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 一种Mn掺杂ZnO稀磁半导体薄膜的制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3953238B2 (ja) * | 1999-09-01 | 2007-08-08 | 独立行政法人科学技術振興機構 | 強磁性p型単結晶酸化亜鉛およびその製造方法 |
| JP4365495B2 (ja) * | 1999-10-29 | 2009-11-18 | ローム株式会社 | 遷移金属を含有する強磁性ZnO系化合物およびその強磁性特性の調整方法 |
| EP1367151A1 (de) * | 2001-03-02 | 2003-12-03 | Japan Science and Technology Corporation | Einkristalline ferromagnetische verbindung auf gruppe-ii-vi- oder gruppe-iii-v-basis und verfahren zur einstellung ihrer ferromagnetischen eigenschaften |
| JP2003298139A (ja) * | 2002-03-29 | 2003-10-17 | Alps Electric Co Ltd | 磁気検出素子 |
| SE0300352D0 (sv) * | 2003-02-06 | 2003-02-06 | Winto Konsult Ab | Ferromagnetism in semiconductors |
| SE528394C2 (sv) * | 2004-05-18 | 2006-11-07 | Nm Spintronics Ab | Mangandopade magnetiska halvledare |
| SE528900C2 (sv) * | 2004-05-18 | 2007-03-13 | Nm Spintronics Ab | Koppardopade magnetiska halvledare |
| JP2006139854A (ja) * | 2004-11-12 | 2006-06-01 | Sony Corp | 情報記録装置、情報記録方法 |
-
2003
- 2003-02-06 SE SE0300352A patent/SE0300352D0/xx unknown
-
2004
- 2004-02-06 JP JP2006502792A patent/JP2006517175A/ja active Pending
- 2004-02-06 AT AT04708955T patent/ATE395312T1/de not_active IP Right Cessation
- 2004-02-06 CN CNB2004800049794A patent/CN100430335C/zh not_active Expired - Fee Related
- 2004-02-06 EP EP04708955A patent/EP1601629B1/de not_active Expired - Lifetime
- 2004-02-06 KR KR1020057014458A patent/KR20050110627A/ko not_active Ceased
- 2004-02-06 DE DE602004013735T patent/DE602004013735D1/de not_active Expired - Fee Related
- 2004-02-06 US US10/544,655 patent/US7527983B2/en not_active Expired - Fee Related
- 2004-02-06 WO PCT/SE2004/000150 patent/WO2004069767A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050110627A (ko) | 2005-11-23 |
| DE602004013735D1 (de) | 2008-06-26 |
| WO2004069767A1 (en) | 2004-08-19 |
| US7527983B2 (en) | 2009-05-05 |
| JP2006517175A (ja) | 2006-07-20 |
| HK1093056A1 (zh) | 2007-02-23 |
| EP1601629B1 (de) | 2008-05-14 |
| CN1816503A (zh) | 2006-08-09 |
| SE0300352D0 (sv) | 2003-02-06 |
| EP1601629A1 (de) | 2005-12-07 |
| US20060148105A1 (en) | 2006-07-06 |
| CN100430335C (zh) | 2008-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Singh et al. | Progress on transition metal-doped ZnO nanoparticles and its application | |
| TW200514289A (en) | Doping of semiconductor | |
| TW200731465A (en) | Field-effect transistor | |
| MY134127A (en) | Luminescent device and method of manufacturing same | |
| WO2009091747A3 (en) | Thermoelectric figure of merit enhancement by modification of the electronic density of states | |
| WO2005104255A3 (en) | High performance thermoelectric materials and their method of preparation | |
| Kanzaki et al. | Optical Absorption and Luminescence of Excitons is Silver Halides Containing Isoelectronic Impurities. Part II. AgBr: Cl-and AgBr | |
| EP1435663A3 (de) | PMOS - Transistor and dessen Herstellung | |
| RU2008143340A (ru) | Аморфный оксид и полевой транзистор с его использованием | |
| ATE395312T1 (de) | Ferromagnetisches material | |
| EP1184489A3 (de) | Verfahren und Vorrichtung zur Dotierung eines Halbleiters und dadurch hergestelltes Halbleitermaterial | |
| WO2007120255A3 (en) | Semiconductor nanocrystal heterostructures | |
| TR200400289T2 (tr) | Bir polibütadien malzemede medikal boru donanımı performansı ve özelliklerinin geliştirilmesi yöntem ve işlemi | |
| JP2005513774A5 (de) | ||
| DE60320191D1 (de) | Ferromagnetischer Raumtemperatur-Halbleiter und Plasma unterstützte Molekularstrahlepitaxie wie Verfahren zu seiner Herstellung | |
| WO2008126466A1 (ja) | 紫外線を発光する応力発光材料およびその製造方法、並びにその利用 | |
| WO2006009783A3 (en) | Low dielectric constant zinc oxide | |
| EP1219577A3 (de) | Ferrit-Material gesintert bei niedriger Temperatur und Ferrit- Teile die dieses benutzen | |
| TW200520216A (en) | Heterostructure resistor and method of forming the same | |
| ATE486051T1 (de) | Lichtdurchlässiges lutetiumoxid-sinterprodukt und herstellungsverfahren dafür | |
| SE0401319D0 (sv) | Manganese doped magnetic semiconductors | |
| WO2003061025A1 (fr) | Structure multicouches a compose semi-conducteur, dispositif a effet hall, et procede de fabrication de ce dispositif | |
| ATE332007T1 (de) | Piezoelektrische keramische zusammensetzung und daraus hergestelltes bauteil | |
| SE0401320D0 (sv) | Copper doped magnetic semiconductors | |
| RU2004130185A (ru) | Магнитный полупроводниковый материал |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |