ATE399366T1 - Abgabevorrichtungs-kathode - Google Patents
Abgabevorrichtungs-kathodeInfo
- Publication number
- ATE399366T1 ATE399366T1 AT04711065T AT04711065T ATE399366T1 AT E399366 T1 ATE399366 T1 AT E399366T1 AT 04711065 T AT04711065 T AT 04711065T AT 04711065 T AT04711065 T AT 04711065T AT E399366 T1 ATE399366 T1 AT E399366T1
- Authority
- AT
- Austria
- Prior art keywords
- emission
- emission area
- reservoir
- work
- function
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
- H01J1/28—Dispenser-type cathodes, e.g. L-cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/065—Construction of guns or parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
- H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Solid Thermionic Cathode (AREA)
- Nozzles (AREA)
- Electron Sources, Ion Sources (AREA)
- Particle Accelerators (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44797503P | 2003-02-14 | 2003-02-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE399366T1 true ATE399366T1 (de) | 2008-07-15 |
Family
ID=32869649
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT10181079T ATE552607T1 (de) | 2003-02-14 | 2004-02-13 | Vorratskathode |
| AT04711065T ATE399366T1 (de) | 2003-02-14 | 2004-02-13 | Abgabevorrichtungs-kathode |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT10181079T ATE552607T1 (de) | 2003-02-14 | 2004-02-13 | Vorratskathode |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US7215070B2 (de) |
| EP (4) | EP2267747B1 (de) |
| JP (2) | JP4624980B2 (de) |
| KR (1) | KR101072948B1 (de) |
| CN (1) | CN1830051B (de) |
| AT (2) | ATE552607T1 (de) |
| DE (1) | DE602004014590D1 (de) |
| WO (1) | WO2004072732A2 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2267747B1 (de) * | 2003-02-14 | 2014-05-14 | Mapper Lithography Ip B.V. | Lithographiesystem mit Vorratskathode |
| CN101073134A (zh) * | 2004-12-09 | 2007-11-14 | 皇家飞利浦电子股份有限公司 | 电子发射阴极 |
| US7545089B1 (en) * | 2005-03-21 | 2009-06-09 | Calabazas Creek Research, Inc. | Sintered wire cathode |
| WO2007102947A1 (en) * | 2006-03-06 | 2007-09-13 | General Electric Company | System and method for x-ray spot control |
| US7317785B1 (en) | 2006-12-11 | 2008-01-08 | General Electric Company | System and method for X-ray spot control |
| EP2148354B1 (de) * | 2007-05-16 | 2014-09-24 | Denki Kagaku Kogyo Kabushiki Kaisha | Elektronenquelle |
| US9220501B2 (en) | 2010-09-30 | 2015-12-29 | Ethicon Endo-Surgery, Inc. | Tissue thickness compensators |
| US9165737B2 (en) | 2012-10-04 | 2015-10-20 | Nuflare Technology, Inc. | High-brightness, long life thermionic cathode and methods of its fabrication |
| JP6590811B2 (ja) * | 2013-12-30 | 2019-10-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 陰極構成体、電子銃、及びこのような電子銃を有するリソグラフィシステム |
| US10269530B1 (en) * | 2017-11-29 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion beam source for semiconductor ion implantation |
| CN113192810B (zh) * | 2021-05-21 | 2025-08-15 | 中国科学技术大学 | 一种太赫兹电子枪 |
| JP7687690B2 (ja) * | 2022-02-16 | 2025-06-03 | 国立研究開発法人日本原子力研究開発機構 | 負イオン源及び負イオン生成方法 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1071849B (de) | 1955-02-05 | 1959-12-24 | ||
| GB776907A (en) * | 1955-06-23 | 1957-06-12 | Standard Telephones Cables Ltd | Improvements in or relating to thermionic cathodes |
| NL165880C (nl) | 1975-02-21 | 1981-05-15 | Philips Nv | Naleveringskathode. |
| FR2390825A1 (fr) * | 1977-05-13 | 1978-12-08 | Thomson Csf | Cathode thermo-ionique a grille incorporee, son procede de fabrication et tube electronique comportant une telle cathode |
| US4101800A (en) | 1977-07-06 | 1978-07-18 | The United States Of America As Represented By The Secretary Of The Navy | Controlled-porosity dispenser cathode |
| US4310603A (en) * | 1978-11-30 | 1982-01-12 | Varian Associates, Inc. | Dispenser cathode |
| NL7905542A (nl) | 1979-07-17 | 1981-01-20 | Philips Nv | Naleveringskathode. |
| US4379979A (en) * | 1981-02-06 | 1983-04-12 | The United States Of America As Represented By The Secretary Of The Navy | Controlled porosity sheet for thermionic dispenser cathode and method of manufacture |
| US4460831A (en) * | 1981-11-30 | 1984-07-17 | Thermo Electron Corporation | Laser stimulated high current density photoelectron generator and method of manufacture |
| JPS58111236A (ja) * | 1981-12-25 | 1983-07-02 | Toshiba Corp | 電子銃構体 |
| DE3374738D1 (en) * | 1982-10-12 | 1988-01-07 | Hughes Aircraft Co | Method for fabricating a dispenser-reservoir housing for a dispenser cathode |
| US4587455A (en) * | 1982-10-12 | 1986-05-06 | Hughes Aircraft Company | Controlled porosity dispenser cathode |
| JPS6062034A (ja) * | 1983-09-14 | 1985-04-10 | Hitachi Ltd | 熱陰極構体 |
| US4583023A (en) * | 1984-07-23 | 1986-04-15 | Avco Everett Research Laboratory, Inc. | Electron beam heated thermionic cathode |
| NL8403032A (nl) | 1984-10-05 | 1986-05-01 | Philips Nv | Werkwijze voor het vervaardigen van een scandaatnaleveringskathode, naleveringskathode vervaardigd met deze werkwijze. |
| NL8600675A (nl) * | 1986-03-17 | 1987-10-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenstroom. |
| JPS63164138A (ja) * | 1986-12-26 | 1988-07-07 | Hitachi Ltd | 含浸形陰極構体 |
| US5261845A (en) | 1987-07-06 | 1993-11-16 | U.S. Philips Corporation | Scandate cathode |
| NL8701584A (nl) * | 1987-07-06 | 1989-02-01 | Philips Nv | Werkwijze voor de vervaardiging van een naleveringskathode; naleveringskathode vervaardigd volgens de werkwijze; lopende golfbuis, klystron en zendbuis bevattende een kathode vervaardigd volgens de werkwijze. |
| NL8900765A (nl) | 1989-03-29 | 1990-10-16 | Philips Nv | Scandaatkathode. |
| US5126574A (en) * | 1989-10-10 | 1992-06-30 | The United States Of America As Represented By The Secretary Of Commerce | Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication |
| NL8902793A (nl) | 1989-11-13 | 1991-06-03 | Philips Nv | Scandaatkathode. |
| US5072148A (en) * | 1990-10-15 | 1991-12-10 | Itt Corporation | Dispenser cathode with emitting surface parallel to ion flow and use in thyratrons |
| US5696028A (en) * | 1992-02-14 | 1997-12-09 | Micron Technology, Inc. | Method to form an insulative barrier useful in field emission displays for reducing surface leakage |
| EP0637046B1 (de) * | 1993-07-29 | 1998-04-01 | Nec Corporation | Thermisch emittierende Kathode, Herstellungsverfahren einer solchen thermisch emittierende Kathode und Elektronenstrahl-Gerät |
| JPH0785807A (ja) * | 1993-09-20 | 1995-03-31 | Hitachi Ltd | 電子銃 |
| US5407633A (en) | 1994-03-15 | 1995-04-18 | U.S. Philips Corporation | Method of manufacturing a dispenser cathode |
| DE19527723A1 (de) | 1995-07-31 | 1997-02-06 | Philips Patentverwaltung | Elektrische Entladungsröhre oder Entladungslampe und Scandat-Vorratskathode |
| EP1369896A3 (de) | 1996-03-04 | 2004-12-22 | Canon Kabushiki Kaisha | Elektronenstrahl Belichtungsgerät und Herstellungsverfahren und -vorrichtung |
| JP3796317B2 (ja) | 1996-06-12 | 2006-07-12 | キヤノン株式会社 | 電子ビーム露光方法及びそれを用いたデバイス製造方法 |
| US5981954A (en) | 1997-01-16 | 1999-11-09 | Canon Kabushiki Kaisha | Electron beam exposure apparatus |
| TW388048B (en) * | 1997-04-30 | 2000-04-21 | Hitachi Ltd | Cathode-ray tube and electron gun thereof |
| JPH11213907A (ja) * | 1998-01-29 | 1999-08-06 | New Japan Radio Co Ltd | 放電管用陰極 |
| US6157039A (en) * | 1998-05-07 | 2000-12-05 | Etec Systems, Inc. | Charged particle beam illumination of blanking aperture array |
| JP2000215800A (ja) * | 1999-01-21 | 2000-08-04 | Sony Corp | 含浸型陰極の製造方法 |
| JP2001052998A (ja) * | 1999-06-03 | 2001-02-23 | Advantest Corp | 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置 |
| US20030025435A1 (en) * | 1999-11-24 | 2003-02-06 | Vancil Bernard K. | Reservoir dispenser cathode and method of manufacture |
| US6677592B2 (en) * | 2000-05-15 | 2004-01-13 | Hsing-Yao Chen | Deflection lens device for electron beam lithography |
| JP4647820B2 (ja) * | 2001-04-23 | 2011-03-09 | キヤノン株式会社 | 荷電粒子線描画装置、および、デバイスの製造方法 |
| US6798126B2 (en) * | 2002-05-03 | 2004-09-28 | Fei Company | High angular intensity Schottky electron point source |
| EP2267747B1 (de) * | 2003-02-14 | 2014-05-14 | Mapper Lithography Ip B.V. | Lithographiesystem mit Vorratskathode |
| US20050116214A1 (en) * | 2003-10-31 | 2005-06-02 | Mammana Victor P. | Back-gated field emission electron source |
| US8058159B2 (en) * | 2008-08-27 | 2011-11-15 | General Electric Company | Method of making low work function component |
-
2004
- 2004-02-13 EP EP10181046.3A patent/EP2267747B1/de not_active Expired - Lifetime
- 2004-02-13 KR KR1020057014997A patent/KR101072948B1/ko not_active Expired - Fee Related
- 2004-02-13 JP JP2006502750A patent/JP4624980B2/ja not_active Expired - Fee Related
- 2004-02-13 DE DE602004014590T patent/DE602004014590D1/de not_active Expired - Lifetime
- 2004-02-13 AT AT10181079T patent/ATE552607T1/de active
- 2004-02-13 EP EP04711065A patent/EP1593140B1/de not_active Expired - Lifetime
- 2004-02-13 WO PCT/NL2004/000112 patent/WO2004072732A2/en not_active Ceased
- 2004-02-13 AT AT04711065T patent/ATE399366T1/de active
- 2004-02-13 CN CN2004800071228A patent/CN1830051B/zh not_active Expired - Fee Related
- 2004-02-13 US US10/778,787 patent/US7215070B2/en not_active Expired - Fee Related
- 2004-02-13 EP EP10181079A patent/EP2293316B1/de not_active Expired - Lifetime
- 2004-02-13 EP EP08157352A patent/EP1959473A3/de not_active Withdrawn
-
2007
- 2007-01-05 US US11/650,310 patent/US7710009B2/en not_active Expired - Lifetime
-
2010
- 2010-03-30 US US12/750,619 patent/US8247958B2/en not_active Expired - Lifetime
- 2010-09-02 JP JP2010196655A patent/JP2011040398A/ja active Pending
-
2011
- 2011-04-07 US US13/082,333 patent/US8263942B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8247958B2 (en) | 2012-08-21 |
| DE602004014590D1 (de) | 2008-08-07 |
| EP2293316A1 (de) | 2011-03-09 |
| WO2004072732A2 (en) | 2004-08-26 |
| JP4624980B2 (ja) | 2011-02-02 |
| WO2004072732A3 (en) | 2005-02-24 |
| CN1830051A (zh) | 2006-09-06 |
| EP2267747B1 (de) | 2014-05-14 |
| KR20050109492A (ko) | 2005-11-21 |
| EP1959473A2 (de) | 2008-08-20 |
| EP1593140B1 (de) | 2008-06-25 |
| US20100219357A1 (en) | 2010-09-02 |
| CN1830051B (zh) | 2010-04-28 |
| EP1959473A3 (de) | 2008-09-03 |
| US7215070B2 (en) | 2007-05-08 |
| JP2011040398A (ja) | 2011-02-24 |
| US20060028114A1 (en) | 2006-02-09 |
| EP2267747A1 (de) | 2010-12-29 |
| US20070182303A1 (en) | 2007-08-09 |
| JP2006518109A (ja) | 2006-08-03 |
| EP2293316B1 (de) | 2012-04-04 |
| US8263942B2 (en) | 2012-09-11 |
| US20110180721A1 (en) | 2011-07-28 |
| KR101072948B1 (ko) | 2011-10-17 |
| EP1593140A2 (de) | 2005-11-09 |
| US7710009B2 (en) | 2010-05-04 |
| ATE552607T1 (de) | 2012-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
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