ATE402184T1 - Metallorganische komplexe und deren verwendung als vorläuferverbindungen für die abscheidung von metallfilmen - Google Patents

Metallorganische komplexe und deren verwendung als vorläuferverbindungen für die abscheidung von metallfilmen

Info

Publication number: ATE402184T1
Authority: AT; Austria
Prior art keywords: metal; deposition; precursor compounds; alkoxy; metal film
Prior art date: 2005-02-04

Application number

AT06001991T

Other languages

English (en)

Inventor

Xinjian Lei

Manchao Xiao

Hareesh Thridandam

Kirk Cuthill

Original Assignee

Air Prod & Chem

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-02-04

Filing date

2006-01-31

Publication date

2008-08-15

2006-01-31 Application filed by Air Prod & Chem filed Critical Air Prod & Chem

2008-08-15 Application granted granted Critical

2008-08-15 Publication of ATE402184T1 publication Critical patent/ATE402184T1/de

Links

229910052751 metal Inorganic materials 0.000 title abstract 5
239000002184 metal Substances 0.000 title abstract 5
239000002243 precursor Substances 0.000 title abstract 3
150000001875 compounds Chemical class 0.000 title 1
230000008021 deposition Effects 0.000 title 1
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
125000003545 alkoxy group Chemical group 0.000 abstract 2
125000002524 organometallic group Chemical group 0.000 abstract 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
125000000217 alkyl group Chemical group 0.000 abstract 1
125000003118 aryl group Chemical group 0.000 abstract 1
229910017052 cobalt Inorganic materials 0.000 abstract 1
239000010941 cobalt Substances 0.000 abstract 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
229910052802 copper Inorganic materials 0.000 abstract 1
239000010949 copper Substances 0.000 abstract 1
-1 cycloaliphatic Chemical group 0.000 abstract 1
238000005137 deposition process Methods 0.000 abstract 1
125000003709 fluoroalkyl group Chemical group 0.000 abstract 1
229910052739 hydrogen Inorganic materials 0.000 abstract 1
239000001257 hydrogen Substances 0.000 abstract 1
125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
229910052741 iridium Inorganic materials 0.000 abstract 1
GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
229910052742 iron Inorganic materials 0.000 abstract 1
WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
229910052759 nickel Inorganic materials 0.000 abstract 1
150000004767 nitrides Chemical class 0.000 abstract 1
229910052762 osmium Inorganic materials 0.000 abstract 1
SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 abstract 1
229910052763 palladium Inorganic materials 0.000 abstract 1
229910052697 platinum Inorganic materials 0.000 abstract 1
229910052702 rhenium Inorganic materials 0.000 abstract 1
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 abstract 1
229910052707 ruthenium Inorganic materials 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1
229910052725 zinc Inorganic materials 0.000 abstract 1
239000011701 zinc Substances 0.000 abstract 1

Classifications

- A—HUMAN NECESSITIES
- A62—LIFE-SAVING; FIRE-FIGHTING
- A62C—FIRE-FIGHTING
- A62C3/00—Fire prevention, containment or extinguishing specially adapted for particular objects or places
- A62C3/02—Fire prevention, containment or extinguishing specially adapted for particular objects or places for area conflagrations, e.g. forest fires, subterranean fires
- A62C3/0221—Fire prevention, containment or extinguishing specially adapted for particular objects or places for area conflagrations, e.g. forest fires, subterranean fires for tunnels
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/02—Iron compounds
- C07F15/025—Iron compounds without a metal-carbon linkage
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
- C07F15/045—Nickel compounds without a metal-carbon linkage
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21F—SAFETY DEVICES, TRANSPORT, FILLING-UP, RESCUE, VENTILATION, OR DRAINING IN OR OF MINES OR TUNNELS
- E21F11/00—Rescue devices or other safety devices, e.g. safety chambers or escape ways
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21F—SAFETY DEVICES, TRANSPORT, FILLING-UP, RESCUE, VENTILATION, OR DRAINING IN OR OF MINES OR TUNNELS
- E21F7/00—Methods or devices for drawing- off gases with or without subsequent use of the gas for any purpose

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Mining & Mineral Resources (AREA)
Life Sciences & Earth Sciences (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Business, Economics & Management (AREA)
Emergency Management (AREA)
Health & Medical Sciences (AREA)
Materials Engineering (AREA)
General Life Sciences & Earth Sciences (AREA)
Geochemistry & Mineralogy (AREA)
Geology (AREA)
Chemical Kinetics & Catalysis (AREA)
Biodiversity & Conservation Biology (AREA)
Ecology (AREA)
Forests & Forestry (AREA)
Public Health (AREA)
Pulmonology (AREA)
Chemical Vapour Deposition (AREA)

AT06001991T 2005-02-04 2006-01-31 Metallorganische komplexe und deren verwendung als vorläuferverbindungen für die abscheidung von metallfilmen ATE402184T1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US11/051,140 US7064224B1 (en)	2005-02-04	2005-02-04	Organometallic complexes and their use as precursors to deposit metal films

Publications (1)

Publication Number	Publication Date
ATE402184T1 true ATE402184T1 (de)	2008-08-15

Family

ID=36272494

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT06001991T ATE402184T1 (de)	2005-02-04	2006-01-31	Metallorganische komplexe und deren verwendung als vorläuferverbindungen für die abscheidung von metallfilmen

Country Status (8)

Country	Link
US (1)	US7064224B1 (de)
EP (1)	EP1688426B1 (de)
JP (1)	JP4388021B2 (de)
KR (1)	KR100665084B1 (de)
CN (1)	CN100400705C (de)
AT (1)	ATE402184T1 (de)
DE (1)	DE602006001873D1 (de)
TW (1)	TWI312375B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US9051641B2 (en) *	2001-07-25	2015-06-09	Applied Materials, Inc.	Cobalt deposition on barrier surfaces
US20070281476A1 (en) *	2006-06-02	2007-12-06	Lavoie Adrien R	Methods for forming thin copper films and structures formed thereby
KR20100017171A (ko) *	2007-05-21	2010-02-16	레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드	반도체 적용을 위한 신규 코발트 전구체
JP2009016782A (ja) *	2007-06-04	2009-01-22	Tokyo Electron Ltd	成膜方法及び成膜装置
KR100892573B1 (ko) *	2007-10-08	2009-04-10	한국화학연구원	신규의 망간 아미노알콕사이드 화합물 및 그 제조 방법
WO2011017068A1 (en) *	2009-08-07	2011-02-10	Sigma-Aldrich Co.	High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
TW201124552A (en) *	2009-09-02	2011-07-16	Ulvac Inc	Method for forming co film
JP2011066060A (ja) *	2009-09-15	2011-03-31	Tokyo Electron Ltd	金属シリサイド膜の形成方法
WO2012057884A1 (en)	2010-10-29	2012-05-03	Applied Materials, Inc.	Nitrogen-containing ligands and their use in atomic layer deposition methods
KR101605643B1 (ko) *	2011-09-29	2016-03-22	인텔 코포레이션	반도체 응용을 위한 양전성 금속 포함 층을 포함하는 장치 및 그 제조방법
JP5842687B2 (ja) *	2012-03-15	2016-01-13	宇部興産株式会社	コバルト膜形成用原料及び当該原料を用いたコバルト含有薄膜の製造方法
JP6317370B2 (ja) *	2013-01-31	2018-04-25	レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード	コバルト含有化合物、その合成及びコバルト含有膜の堆積におけるその使用
US9790247B2 (en) *	2013-01-31	2017-10-17	L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude	Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition
US9994954B2 (en)	2013-07-26	2018-06-12	Versum Materials Us, Llc	Volatile dihydropyrazinly and dihydropyrazine metal complexes
KR102198856B1 (ko)	2014-02-10	2021-01-05	삼성전자 주식회사	니켈 함유막을 포함하는 반도체 소자의 제조 방법
US10329057B2 (en)	2015-11-11	2019-06-25	Oculus Design LLC	Spill resistant cup lid
CN106011778B (zh) *	2016-06-15	2018-10-16	中国科学院微电子研究所	一种单原子层沉积技术生长含Ni薄膜的方法
WO2022164698A1 (en) *	2021-01-26	2022-08-04	Entegris, Inc.	High throughput deposition process

Family Cites Families (8)

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US5314727A (en)	1992-07-28	1994-05-24	Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota	Chemical vapor deposition of iron, ruthenium, and osmium
US5603988A (en) *	1995-06-02	1997-02-18	Morton International, Inc.	Method for depositing a titanium or tantalum nitride or nitride silicide
US6214729B1 (en)	1998-09-01	2001-04-10	Micron Technology, Inc.	Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
US7494927B2 (en)	2000-05-15	2009-02-24	Asm International N.V.	Method of growing electrical conductors
US6777565B2 (en)	2000-06-29	2004-08-17	Board Of Trustees, The University Of Illinois	Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
US6969539B2 (en) *	2000-09-28	2005-11-29	President And Fellows Of Harvard College	Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US6527855B2 (en)	2000-10-10	2003-03-04	Rensselaer Polytechnic Institute	Atomic layer deposition of cobalt from cobalt metallorganic compounds
CN1726303B (zh)	2002-11-15	2011-08-24	哈佛学院院长等	使用脒基金属的原子层沉积

2005
- 2005-02-04 US US11/051,140 patent/US7064224B1/en not_active Expired - Lifetime
2006
- 2006-01-28 CN CNB2006100089260A patent/CN100400705C/zh not_active Expired - Fee Related
- 2006-01-31 AT AT06001991T patent/ATE402184T1/de not_active IP Right Cessation
- 2006-01-31 DE DE602006001873T patent/DE602006001873D1/de not_active Expired - Lifetime
- 2006-01-31 EP EP06001991A patent/EP1688426B1/de not_active Expired - Lifetime
- 2006-02-03 KR KR1020060010775A patent/KR100665084B1/ko not_active Expired - Fee Related
- 2006-02-03 TW TW095103783A patent/TWI312375B/zh not_active IP Right Cessation
- 2006-02-06 JP JP2006028539A patent/JP4388021B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP4388021B2 (ja)	2009-12-24
TW200628627A (en)	2006-08-16
KR100665084B1 (ko)	2007-01-09
CN100400705C (zh)	2008-07-09
CN1814605A (zh)	2006-08-09
EP1688426B1 (de)	2008-07-23
EP1688426A1 (de)	2006-08-09
DE602006001873D1 (de)	2008-09-04
TWI312375B (en)	2009-07-21
KR20060089677A (ko)	2006-08-09
JP2006257073A (ja)	2006-09-28
US7064224B1 (en)	2006-06-20

Legal Events

Date	Code	Title	Description
2009-01-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties

Publication	Publication Date	Title
ATE402184T1 (de)	2008-08-15	Metallorganische komplexe und deren verwendung als vorläuferverbindungen für die abscheidung von metallfilmen
ATE521728T1 (de)	2011-09-15	Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten
TW200700425A (en)	2007-01-01	Processes for the production of organometallic compounds
ATE323711T1 (de)	2006-05-15	Organometallverbindungen und ihre verwendung als vorstufen zur ausbildung von schichten und pulvern von metallen oder metall-derivaten
US9758866B2 (en)	2017-09-12	Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
JP2016540038A5 (de)	2017-10-26
US11655262B2 (en)	2023-05-23	Process for the generation of metal-containing films
WO2008002415A3 (en)	2008-03-06	Precursors for depositing silicon containing films and processes thereof
ATE535534T1 (de)	2011-12-15	Metall-organische niobium- und vanadium-vorläufer zur dünnschichtablagerung
US20180044357A1 (en)	2018-02-15	Process for the generation of thin inorganic films
JP2017503856A5 (de)	2019-05-09
TW200609238A (en)	2006-03-16	Chemical vapor deposition material and chemical vapor deposition
EP1887012A3 (de)	2008-02-27	Organometallische Verbindungen für CVD und ALD von dünnen Filmen
Xiang et al.	2012	Synthesis, structures, and photophysical properties of ruthenium (II) quinolinolato complexes
WO2006088686A3 (en)	2007-03-22	Organoaluminum precursor compounds
Räisänen et al.	2007	Coordination of pyridinethiols in gold (I) complexes
JP2016211049A (ja)	2016-12-15	異種複核錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
CN107923038A (zh)	2018-04-17	由双核钌配合物构成的化学蒸镀用原料及使用该化学蒸镀用原料的化学蒸镀法
WO2010052672A2 (en)	2010-05-14	Allyl-containing precursors for the deposition of metal-containing films
AU743343B2 (en)	2002-01-24	Novel copper(I) precursors for chemical deposit in gas phase of metallic copper
JPWO2005035823A1 (ja)	2006-12-21	β−ジケトナト配位子を有する金属錯体および金属含有薄膜の製造方法
Preischel et al.	2025	Near Room-Temperature Atomic Layer Deposition of Magnesium Oxide Using Bis-3-(N, N-dimethylamino) propyl Magnesium (II) and Water
EP2322690A3 (de)	2011-06-15	Gruppe-4-Metallvorläufer für metallhaltige Filme
KR20210031492A (ko)	2021-03-19	금속 또는 반금속-함유 필름의 제조 방법
TW200745140A (en)	2007-12-16	Copper (I) amidinates and guanidinates, mixed ligand copper complexes, and compositions for chemical vapor deposition, atomic layer deposition, and rapid vapor deposition of copper