ATE402276T1 - Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtraten - Google Patents

Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtraten

Info

Publication number
ATE402276T1
ATE402276T1 AT04780611T AT04780611T ATE402276T1 AT E402276 T1 ATE402276 T1 AT E402276T1 AT 04780611 T AT04780611 T AT 04780611T AT 04780611 T AT04780611 T AT 04780611T AT E402276 T1 ATE402276 T1 AT E402276T1
Authority
AT
Austria
Prior art keywords
metal
substrates
utilized
introduce
precursor
Prior art date
Application number
AT04780611T
Other languages
English (en)
Inventor
Demetrius Sarigiannis
Garo Derderian
Cem Basceri
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE402276T1 publication Critical patent/ATE402276T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/101—Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT04780611T 2003-08-22 2004-08-09 Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtraten ATE402276T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/652,224 US7048968B2 (en) 2003-08-22 2003-08-22 Methods of depositing materials over substrates, and methods of forming layers over substrates

Publications (1)

Publication Number Publication Date
ATE402276T1 true ATE402276T1 (de) 2008-08-15

Family

ID=34194673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04780611T ATE402276T1 (de) 2003-08-22 2004-08-09 Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtraten

Country Status (9)

Country Link
US (3) US7048968B2 (de)
EP (1) EP1656469B1 (de)
JP (1) JP2007502021A (de)
KR (1) KR100762575B1 (de)
CN (1) CN1839217B (de)
AT (1) ATE402276T1 (de)
DE (1) DE602004015300D1 (de)
TW (1) TWI288785B (de)
WO (1) WO2005047563A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
CN101622376B (zh) * 2007-01-30 2012-04-04 朗姆研究公司 使用超临界溶剂在半导体基片上形成金属膜的组合物和方法
FR2915753B1 (fr) * 2007-05-02 2009-09-04 Commissariat Energie Atomique Procede et dispositif de preparation d'un revetement multicouche sur un substrat
US10041169B2 (en) * 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
CN101651174B (zh) * 2008-08-12 2013-01-23 昆山中辰硅晶有限公司 供半导体光电元件外延用的半导体基板及其制造方法
US8404878B2 (en) * 2010-04-07 2013-03-26 American Air Liquide, Inc. Titanium-containing precursors for vapor deposition
US9269567B2 (en) * 2013-12-17 2016-02-23 Intermolecular, Inc. High productivity combinatorial processing using pressure-controlled one-way valves
US9330902B1 (en) 2015-06-04 2016-05-03 United Microelectronics Corp. Method for forming HfOx film based on atomic layer deposition (ALD) process
TWI579902B (zh) * 2015-06-12 2017-04-21 晶元光電股份有限公司 一種基板移除設備及利用此設備的基板移除製程
US10431695B2 (en) 2017-12-20 2019-10-01 Micron Technology, Inc. Transistors comprising at lease one of GaP, GaN, and GaAs
US10825816B2 (en) 2017-12-28 2020-11-03 Micron Technology, Inc. Recessed access devices and DRAM constructions
US10319586B1 (en) 2018-01-02 2019-06-11 Micron Technology, Inc. Methods comprising an atomic layer deposition sequence
US10734527B2 (en) 2018-02-06 2020-08-04 Micron Technology, Inc. Transistors comprising a pair of source/drain regions having a channel there-between
TWI792008B (zh) * 2020-06-19 2023-02-11 國立中山大學 針具的表面改質方法
CN112176320B (zh) * 2020-09-11 2021-09-24 大连理工大学 一种超临界二氧化碳脉冲可控生长二维半导体薄膜的方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4737384A (en) * 1985-11-01 1988-04-12 Allied Corporation Deposition of thin films using supercritical fluids
US4970093A (en) * 1990-04-12 1990-11-13 University Of Colorado Foundation Chemical deposition methods using supercritical fluid solutions
KR930019861A (ko) * 1991-12-12 1993-10-19 완다 케이. 덴슨-로우 조밀상 기체를 이용한 코팅 방법
US5789027A (en) * 1996-11-12 1998-08-04 University Of Massachusetts Method of chemically depositing material onto a substrate
US6348376B2 (en) * 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
EP1024524A2 (de) 1999-01-27 2000-08-02 Matsushita Electric Industrial Co., Ltd. Abscheidung von dielektrischen Schichten unter Verwendung von überkritischem CO2
US7629028B2 (en) * 1999-03-19 2009-12-08 Battelle Memorial Insitute Methods of making monolayers
US6531224B1 (en) * 1999-03-19 2003-03-11 Battelle Memorial Institute Self-assembled monolayer and method of making
US6689700B1 (en) * 1999-11-02 2004-02-10 University Of Massachusetts Chemical fluid deposition method for the formation of metal and metal alloy films on patterned and unpatterned substrates
IT1313967B1 (it) * 1999-12-27 2002-09-26 Thermoquest Italia Spa Sistema e metodo per controllare la temperatura di una colonna percromatografia.
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
JP4577464B2 (ja) 2000-06-27 2010-11-10 三菱瓦斯化学株式会社 銅−亜鉛系触媒前駆体組成物および該触媒の製造法
US6576345B1 (en) * 2000-11-30 2003-06-10 Novellus Systems Inc Dielectric films with low dielectric constants
GB2371248A (en) * 2000-12-04 2002-07-24 Seiko Epson Corp Fabrication of self-assembled monolayers
US6451375B1 (en) * 2001-01-05 2002-09-17 International Business Machines Corporation Process for depositing a film on a nanometer structure
KR100384558B1 (ko) * 2001-02-22 2003-05-22 삼성전자주식회사 반도체 장치의 유전체층 형성방법 및 이를 이용한캐패시터 형성방법
US6951765B1 (en) * 2001-12-12 2005-10-04 Novellus Systems, Inc. Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor
US7119418B2 (en) * 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7030168B2 (en) * 2001-12-31 2006-04-18 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
JP4234930B2 (ja) 2002-01-24 2009-03-04 セイコーエプソン株式会社 成膜装置及び成膜方法
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
CN1202163C (zh) * 2002-02-08 2005-05-18 中国科学院化学研究所 用超临界二氧化碳制备导电聚吡咯复合膜材料的方法
US6653236B2 (en) 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions
WO2003106011A2 (en) 2002-06-12 2003-12-24 Praxair Technology, Inc. A method for producing organometallic compounds
JP4336769B2 (ja) 2002-06-27 2009-09-30 独立行政法人産業技術総合研究所 薄膜作製方法および薄膜作製装置
TWI274082B (en) 2002-10-31 2007-02-21 Praxair Technology Inc Methods for making metallocene compounds
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US6989172B2 (en) * 2003-01-27 2006-01-24 Micell Technologies, Inc. Method of coating microelectronic substrates
US6835664B1 (en) 2003-06-26 2004-12-28 Micron Technology, Inc. Methods of forming trenched isolation regions
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates

Also Published As

Publication number Publication date
JP2007502021A (ja) 2007-02-01
EP1656469A1 (de) 2006-05-17
US20060222770A1 (en) 2006-10-05
WO2005047563A1 (en) 2005-05-26
US7048968B2 (en) 2006-05-23
US20050042374A1 (en) 2005-02-24
EP1656469B1 (de) 2008-07-23
US20090215252A1 (en) 2009-08-27
KR20060037422A (ko) 2006-05-03
TW200512311A (en) 2005-04-01
CN1839217B (zh) 2010-04-21
US7794787B2 (en) 2010-09-14
DE602004015300D1 (de) 2008-09-04
TWI288785B (en) 2007-10-21
CN1839217A (zh) 2006-09-27
KR100762575B1 (ko) 2007-10-01
US7544388B2 (en) 2009-06-09

Similar Documents

Publication Publication Date Title
ATE402276T1 (de) Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtraten
ATE519870T1 (de) Verfahren zur abscheidung von metallschichten aus metallcarbonylvorläufern
EA201070089A1 (ru) Способ осаждения материалов из оксидов металлов
WO2007024720A3 (en) Pretreatment processes within a batch ald reactor
TW200606168A (en) Copper (I) compounds useful as deposition precursors of copper thin films
ATE482301T1 (de) Verfahren zur herstellung von siliziumoxidhaltigen schichten
WO2007140424A3 (en) Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
TW200726856A (en) Controlled vapor deposition of multilayered coatings adhered by an oxide layer (Ⅰ)
TW200520099A (en) Method of forming a metal layer using an intermittent precursor gas flow process
WO2005121397A3 (en) Controlled vapor deposition of multilayered coatings adhered by an oxide layer
WO2006012052A3 (en) Amidinate ligand containing chemical vapor deposition precursors
RU2007115923A (ru) Многослойные покрытия, полученные химическим осаждением из паров, усиленным плазмой
MX349614B (es) Metodos y aparatos para elaborar recubrimientos utilizando deposicion de rocio ultrasonico.
WO2010071364A3 (ko) 금속 박막 또는 금속 산화물 박막 증착용 유기금속 전구체 화합물 및 이를 이용한 박막 증착 방법
WO2004009861A8 (en) Method to form ultra high quality silicon-containing compound layers
TW200622022A (en) A method and system for forming a passivated metal layer
EP1383163A3 (de) Verfahren zur Bildung von Siliziumdioxidschichten mittels Abscheidung von Atomschichten
WO2004070074A3 (en) Nanolayer deposition process
TW200714737A (en) Vapor deposition of hafnium silicate materials with tris(dimethylamido) silane
WO2005027189A3 (en) Formation of a metal-containing film by sequential gas exposure in a batch type processing system
WO2005034195A3 (en) Growth of high-k dielectrics by atomic layer deposition
TW200743678A (en) Process for producing silicon oxide films from organoaminosilane precursors
TW200940738A (en) Method for forming a titanium-containing layer on a substrate using an ALD process
WO2005029568A3 (en) INTERFACIAL OXIDATION PROCESS FOR HIGH-k GATE DIELECTRIC PROCESS INTEGRATION
TW200614415A (en) Method of improving to deposit dielectric

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties