ATE519870T1 - Verfahren zur abscheidung von metallschichten aus metallcarbonylvorläufern - Google Patents

Verfahren zur abscheidung von metallschichten aus metallcarbonylvorläufern

Info

Publication number
ATE519870T1
ATE519870T1 AT05807544T AT05807544T ATE519870T1 AT E519870 T1 ATE519870 T1 AT E519870T1 AT 05807544 T AT05807544 T AT 05807544T AT 05807544 T AT05807544 T AT 05807544T AT E519870 T1 ATE519870 T1 AT E519870T1
Authority
AT
Austria
Prior art keywords
metal
deposing
substrate
gas
carbonyl precursors
Prior art date
Application number
AT05807544T
Other languages
English (en)
Inventor
Kenji Suzuki
Emmanuel Guidotti
Gerrit Leusink
Fenton Mcfeely
Sandra G Malhotra
Original Assignee
Tokyo Electron Ltd
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Ibm filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE519870T1 publication Critical patent/ATE519870T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT05807544T 2004-11-23 2005-10-03 Verfahren zur abscheidung von metallschichten aus metallcarbonylvorläufern ATE519870T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/996,145 US7270848B2 (en) 2004-11-23 2004-11-23 Method for increasing deposition rates of metal layers from metal-carbonyl precursors
PCT/US2005/035582 WO2006057709A2 (en) 2004-11-23 2005-10-03 Method for deposition of metal layers from metal carbonyl precursors

Publications (1)

Publication Number Publication Date
ATE519870T1 true ATE519870T1 (de) 2011-08-15

Family

ID=36102580

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05807544T ATE519870T1 (de) 2004-11-23 2005-10-03 Verfahren zur abscheidung von metallschichten aus metallcarbonylvorläufern

Country Status (8)

Country Link
US (2) US7270848B2 (de)
EP (1) EP1828430B1 (de)
JP (1) JP4980235B2 (de)
KR (1) KR101178984B1 (de)
CN (1) CN100572591C (de)
AT (1) ATE519870T1 (de)
TW (1) TWI300098B (de)
WO (1) WO2006057709A2 (de)

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US20100081274A1 (en) * 2008-09-29 2010-04-01 Tokyo Electron Limited Method for forming ruthenium metal cap layers
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
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US8242019B2 (en) * 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
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Also Published As

Publication number Publication date
WO2006057709A3 (en) 2006-09-28
TWI300098B (en) 2008-08-21
WO2006057709A2 (en) 2006-06-01
CN100572591C (zh) 2009-12-23
US7270848B2 (en) 2007-09-18
TW200628629A (en) 2006-08-16
WO2006057709A8 (en) 2007-05-31
KR101178984B1 (ko) 2012-08-31
CN101124352A (zh) 2008-02-13
JP2008520835A (ja) 2008-06-19
US7678421B2 (en) 2010-03-16
EP1828430B1 (de) 2011-08-10
JP4980235B2 (ja) 2012-07-18
EP1828430A2 (de) 2007-09-05
KR20070083871A (ko) 2007-08-24
US20060110530A1 (en) 2006-05-25
US20080003360A1 (en) 2008-01-03

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