ATE402486T1 - Verfahren zum herstellen einer halbleiter- vorrichtung mit selbstausrichtenden metallischen kontakten - Google Patents

Verfahren zum herstellen einer halbleiter- vorrichtung mit selbstausrichtenden metallischen kontakten

Info

Publication number
ATE402486T1
ATE402486T1 AT04742859T AT04742859T ATE402486T1 AT E402486 T1 ATE402486 T1 AT E402486T1 AT 04742859 T AT04742859 T AT 04742859T AT 04742859 T AT04742859 T AT 04742859T AT E402486 T1 ATE402486 T1 AT E402486T1
Authority
AT
Austria
Prior art keywords
making
semiconductor device
doped region
self
conductivity
Prior art date
Application number
AT04742859T
Other languages
English (en)
Inventor
Pierre-Jean Ribeyron
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE402486T1 publication Critical patent/ATE402486T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
AT04742859T 2003-04-29 2004-04-27 Verfahren zum herstellen einer halbleiter- vorrichtung mit selbstausrichtenden metallischen kontakten ATE402486T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0350136A FR2854497B1 (fr) 2003-04-29 2003-04-29 Procede de realisation d'un dispositif semi-conducteur a metallisations auto-alignees

Publications (1)

Publication Number Publication Date
ATE402486T1 true ATE402486T1 (de) 2008-08-15

Family

ID=33155679

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04742859T ATE402486T1 (de) 2003-04-29 2004-04-27 Verfahren zum herstellen einer halbleiter- vorrichtung mit selbstausrichtenden metallischen kontakten

Country Status (9)

Country Link
US (1) US7364938B2 (de)
EP (1) EP1618611B1 (de)
JP (1) JP5196785B2 (de)
CN (1) CN100452442C (de)
AT (1) ATE402486T1 (de)
DE (1) DE602004015270D1 (de)
ES (1) ES2311158T3 (de)
FR (1) FR2854497B1 (de)
WO (1) WO2004097945A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
FR2880986B1 (fr) * 2005-01-20 2007-03-02 Commissariat Energie Atomique Procede de metallisation d'un dispositif semi-conducteur
DE102008013446A1 (de) * 2008-02-15 2009-08-27 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
JP2009253096A (ja) * 2008-04-08 2009-10-29 Sharp Corp 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール
CN101958361A (zh) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 透光薄膜太阳电池组件刻蚀方法
KR101948206B1 (ko) * 2012-03-02 2019-02-14 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지와, 이의 제조 방법
TWI643351B (zh) * 2013-01-31 2018-12-01 澳洲商新南創新有限公司 太陽能電池金屬化及互連方法
WO2014179368A1 (en) * 2013-04-29 2014-11-06 Solexel, Inc. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234352A (en) * 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
JP4329183B2 (ja) * 1999-10-14 2009-09-09 ソニー株式会社 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法
US6396046B1 (en) * 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell

Also Published As

Publication number Publication date
WO2004097945A1 (fr) 2004-11-11
FR2854497A1 (fr) 2004-11-05
EP1618611B1 (de) 2008-07-23
DE602004015270D1 (de) 2008-09-04
US20060275936A1 (en) 2006-12-07
EP1618611A1 (de) 2006-01-25
FR2854497B1 (fr) 2005-09-02
CN100452442C (zh) 2009-01-14
JP2006525658A (ja) 2006-11-09
CN1781194A (zh) 2006-05-31
JP5196785B2 (ja) 2013-05-15
ES2311158T3 (es) 2009-02-01
US7364938B2 (en) 2008-04-29

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