ATE407097T1 - Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen - Google Patents

Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen

Info

Publication number
ATE407097T1
ATE407097T1 AT03744229T AT03744229T ATE407097T1 AT E407097 T1 ATE407097 T1 AT E407097T1 AT 03744229 T AT03744229 T AT 03744229T AT 03744229 T AT03744229 T AT 03744229T AT E407097 T1 ATE407097 T1 AT E407097T1
Authority
AT
Austria
Prior art keywords
silicon carbide
microelectromechanical
electronic circuits
etch rate
substrate
Prior art date
Application number
AT03744229T
Other languages
English (en)
Inventor
Kevin Kornegay
Andrew Ryan Atwell
Mihaela Balseanu
Jon Duster
Eskinder Hailu
Ce Li
Original Assignee
Cornell Res Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell Res Foundation Inc filed Critical Cornell Res Foundation Inc
Application granted granted Critical
Publication of ATE407097T1 publication Critical patent/ATE407097T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Ceramic Products (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Pressure Sensors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
AT03744229T 2002-03-08 2003-03-07 Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen ATE407097T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36261802P 2002-03-08 2002-03-08

Publications (1)

Publication Number Publication Date
ATE407097T1 true ATE407097T1 (de) 2008-09-15

Family

ID=27805204

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03744229T ATE407097T1 (de) 2002-03-08 2003-03-07 Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen

Country Status (8)

Country Link
US (2) US7170141B2 (de)
EP (1) EP1487738B1 (de)
JP (1) JP2005519778A (de)
CN (1) CN1652995A (de)
AT (1) ATE407097T1 (de)
AU (1) AU2003231965A1 (de)
DE (1) DE60323344D1 (de)
WO (1) WO2003076330A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE407097T1 (de) * 2002-03-08 2008-09-15 Cornell Res Foundation Inc Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen
EP3249154A1 (de) * 2003-11-18 2017-11-29 Halliburton Energy Services Inc. Hochtemperaturumgebungswerkzeugsystem und -verfahren
US8154092B2 (en) * 2004-08-09 2012-04-10 Case Western Reserve University Silicon carbide MEMS structures and methods of forming the same
US7616013B2 (en) * 2004-11-11 2009-11-10 Brigham Young University Micromechanical positional state sensing apparatus method and system
ES2299298B1 (es) * 2005-07-21 2009-04-01 Universitat Autonoma De Barcelona Procedimiento de integracion monolitica de materiales de alta calidad mecanica con circuitos integrados para aplicaciones mems/nems.
US20070287301A1 (en) * 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7601651B2 (en) * 2006-03-31 2009-10-13 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
TWI308800B (en) * 2006-10-26 2009-04-11 Ind Tech Res Inst Method for making thin film transistor and structure of the same
US7705411B2 (en) * 2008-04-09 2010-04-27 National Semiconductor Corporation MEMS-topped integrated circuit with a stress relief layer
US8044755B2 (en) * 2008-04-09 2011-10-25 National Semiconductor Corporation MEMS power inductor
US8897470B2 (en) * 2009-07-31 2014-11-25 Macronix International Co., Ltd. Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unit
CN103430308B (zh) 2010-12-01 2017-02-15 康奈尔大学 用于电且机械连接的单片集成晶体管和mems/nems器件的结构和方法
US8754421B2 (en) 2012-02-24 2014-06-17 Raytheon Company Method for processing semiconductors using a combination of electron beam and optical lithography
JP6712650B2 (ja) * 2016-12-14 2020-06-24 株式会社日立製作所 半導体装置およびその製造方法並びにセンサ

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US5165283A (en) 1991-05-02 1992-11-24 Kulite Semiconductor Products, Inc. High temperature transducers and methods of fabricating the same employing silicon carbide
US6034001A (en) 1991-10-16 2000-03-07 Kulite Semiconductor Products, Inc. Method for etching of silicon carbide semiconductor using selective etching of different conductivity types
US5465249A (en) 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5303594A (en) 1992-08-11 1994-04-19 Kulite Semiconductor Products, Inc. Pressure transducer utilizing diamond piezoresistive sensors and silicon carbide force collector
US5454915A (en) 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
US5298767A (en) 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5386142A (en) 1993-05-07 1995-01-31 Kulite Semiconductor Products, Inc. Semiconductor structures having environmentally isolated elements and method for making the same
US5549006A (en) 1994-05-24 1996-08-27 Kulite Semiconductor Products, Inc. Temperature compensated silicon carbide pressure transducer and method for making the same
US5750896A (en) * 1994-07-22 1998-05-12 Hughes Aircraft Company Tool joint sensor
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US6327911B1 (en) 1995-05-25 2001-12-11 Kulite Semiconductor Products High temperature pressure transducer fabricated from beta silicon carbide
US6691581B2 (en) 1995-05-25 2004-02-17 Kulite Semiconductor Products, Inc. Pressure transducer fabricated from beta silicon carbide
US6229427B1 (en) 1995-07-13 2001-05-08 Kulite Semiconductor Products Inc. Covered sealed pressure transducers and method for making same
US5963788A (en) 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US5614678A (en) 1996-02-05 1997-03-25 Kulite Semiconductor Products, Inc. High pressure piezoresistive transducer
US5622902A (en) 1996-03-14 1997-04-22 Kulite Semiconductor Products, Inc. Passivation/patterning of PZR diamond films for high temperature operability
US5955771A (en) 1997-11-12 1999-09-21 Kulite Semiconductor Products, Inc. Sensors for use in high vibrational applications and methods for fabricating same
US6171972B1 (en) 1998-03-17 2001-01-09 Rosemount Aerospace Inc. Fracture-resistant micromachined devices
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JP2000199505A (ja) * 1999-01-07 2000-07-18 Funagata Kagaku Kenkyusho:Kk 物体の流体摩擦抵抗低減装置
US6235611B1 (en) 1999-01-12 2001-05-22 Kulite Semiconductor Products Inc. Method for making silicon-on-sapphire transducers
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US6272929B1 (en) 1999-02-04 2001-08-14 Kulite Semiconductor Products High pressure piezoresistive transducer suitable for use in hostile environments
US6612179B1 (en) 1999-06-23 2003-09-02 Kulite Semiconductor Products, Inc. Method and apparatus for the determination of absolute pressure and differential pressure therefrom
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US6272928B1 (en) 2000-01-24 2001-08-14 Kulite Semiconductor Products Hermetically sealed absolute and differential pressure transducer
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US20030141802A1 (en) * 2002-01-28 2003-07-31 John Liebeskind Electronic device having a getter used as a circuit element
ATE407097T1 (de) * 2002-03-08 2008-09-15 Cornell Res Foundation Inc Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen
US6595066B1 (en) 2002-04-05 2003-07-22 Kulite Semiconductor Products, Inc. Stopped leadless differential sensor

Also Published As

Publication number Publication date
WO2003076330A3 (en) 2004-08-19
US20080093605A1 (en) 2008-04-24
US7170141B2 (en) 2007-01-30
US7615788B2 (en) 2009-11-10
EP1487738B1 (de) 2008-09-03
AU2003231965A8 (en) 2003-09-22
WO2003076330A2 (en) 2003-09-18
JP2005519778A (ja) 2005-07-07
US20040077164A1 (en) 2004-04-22
AU2003231965A1 (en) 2003-09-22
DE60323344D1 (de) 2008-10-16
CN1652995A (zh) 2005-08-10
EP1487738A2 (de) 2004-12-22

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