ATE407237T1 - Einkristalldiamant hergestellt durch cvd - Google Patents

Einkristalldiamant hergestellt durch cvd

Info

Publication number
ATE407237T1
ATE407237T1 AT01940878T AT01940878T ATE407237T1 AT E407237 T1 ATE407237 T1 AT E407237T1 AT 01940878 T AT01940878 T AT 01940878T AT 01940878 T AT01940878 T AT 01940878T AT E407237 T1 ATE407237 T1 AT E407237T1
Authority
AT
Austria
Prior art keywords
cvd
single crystal
crystal diamond
diamond made
diamond
Prior art date
Application number
AT01940878T
Other languages
English (en)
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
John Lloyd Collins
Ricardo Simon Sussmann
Baerbel Susanne Charlotte Dorn
Andrew John Whitehead
Daniel James Twitchen
Original Assignee
Element Six Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0014693A external-priority patent/GB0014693D0/en
Priority claimed from GB0106930A external-priority patent/GB0106930D0/en
Application filed by Element Six Pty Ltd filed Critical Element Six Pty Ltd
Application granted granted Critical
Publication of ATE407237T1 publication Critical patent/ATE407237T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
AT01940878T 2000-06-15 2001-06-14 Einkristalldiamant hergestellt durch cvd ATE407237T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0014693A GB0014693D0 (en) 2000-06-15 2000-06-15 Diamnond
GB0106930A GB0106930D0 (en) 2001-03-20 2001-03-20 Diamond

Publications (1)

Publication Number Publication Date
ATE407237T1 true ATE407237T1 (de) 2008-09-15

Family

ID=26244497

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01940878T ATE407237T1 (de) 2000-06-15 2001-06-14 Einkristalldiamant hergestellt durch cvd

Country Status (15)

Country Link
US (3) US20040221795A1 (de)
EP (2) EP1983080B8 (de)
JP (1) JP4695821B2 (de)
KR (1) KR100837033B1 (de)
CN (1) CN1243855C (de)
AT (1) ATE407237T1 (de)
AU (2) AU2001274368B2 (de)
CA (1) CA2412853C (de)
CZ (1) CZ302228B6 (de)
DE (1) DE60135653D1 (de)
GB (1) GB2383588B (de)
IL (2) IL153380A0 (de)
RU (1) RU2288302C2 (de)
TW (1) TW548351B (de)
WO (1) WO2001096633A1 (de)

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Also Published As

Publication number Publication date
GB2383588B (en) 2004-05-05
KR100837033B1 (ko) 2008-06-10
CN1243855C (zh) 2006-03-01
US9103050B2 (en) 2015-08-11
AU2001274368B2 (en) 2004-10-28
AU7436801A (en) 2001-12-24
US8501143B2 (en) 2013-08-06
IL153380A (en) 2006-08-20
JP2004503460A (ja) 2004-02-05
EP1292726A1 (de) 2003-03-19
DE60135653D1 (de) 2008-10-16
EP1292726B1 (de) 2008-09-03
JP4695821B2 (ja) 2011-06-08
US20040221795A1 (en) 2004-11-11
CA2412853C (en) 2009-08-25
RU2288302C2 (ru) 2006-11-27
EP1983080B1 (de) 2017-02-01
CN1441860A (zh) 2003-09-10
GB0300199D0 (en) 2003-02-05
US20090175777A1 (en) 2009-07-09
EP1983080A2 (de) 2008-10-22
GB2383588A (en) 2003-07-02
US20130202518A1 (en) 2013-08-08
CA2412853A1 (en) 2001-12-20
HK1057583A1 (en) 2004-04-08
TW548351B (en) 2003-08-21
IL153380A0 (en) 2003-07-06
EP1292726B8 (de) 2008-10-29
EP1983080A3 (de) 2012-12-19
EP1983080B8 (de) 2017-08-02
CZ302228B6 (cs) 2011-01-05
WO2001096633A1 (en) 2001-12-20
KR20030046338A (ko) 2003-06-12
CZ20024227A3 (cs) 2003-12-17

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