ATE407457T1 - Ambipolare, lichtemittierende feldeffekttransistoren - Google Patents

Ambipolare, lichtemittierende feldeffekttransistoren

Info

Publication number
ATE407457T1
ATE407457T1 AT05701898T AT05701898T ATE407457T1 AT E407457 T1 ATE407457 T1 AT E407457T1 AT 05701898 T AT05701898 T AT 05701898T AT 05701898 T AT05701898 T AT 05701898T AT E407457 T1 ATE407457 T1 AT E407457T1
Authority
AT
Austria
Prior art keywords
light emitting
field effect
effect transistors
emitting field
injecting electrode
Prior art date
Application number
AT05701898T
Other languages
English (en)
Inventor
Jana Zaumseil
Henning Sirringhaus
Lay-Lay Chua
Peter Ho
Richard Friend
Original Assignee
Cambridge Entpr Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Entpr Ltd filed Critical Cambridge Entpr Ltd
Application granted granted Critical
Publication of ATE407457T1 publication Critical patent/ATE407457T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
AT05701898T 2004-01-16 2005-01-17 Ambipolare, lichtemittierende feldeffekttransistoren ATE407457T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0400997.3A GB0400997D0 (en) 2004-01-16 2004-01-16 N-channel transistor

Publications (1)

Publication Number Publication Date
ATE407457T1 true ATE407457T1 (de) 2008-09-15

Family

ID=31726316

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05701898T ATE407457T1 (de) 2004-01-16 2005-01-17 Ambipolare, lichtemittierende feldeffekttransistoren

Country Status (10)

Country Link
US (3) US7638793B2 (de)
EP (3) EP1704587B1 (de)
JP (3) JP5552205B2 (de)
KR (1) KR101142991B1 (de)
CN (3) CN101847689B (de)
AT (1) ATE407457T1 (de)
DE (1) DE602005009495D1 (de)
GB (1) GB0400997D0 (de)
SG (1) SG149855A1 (de)
WO (2) WO2005069401A1 (de)

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US7528448B2 (en) * 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
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US8686404B2 (en) 2008-12-08 2014-04-01 The Trustees Of The University Of Pennsylvania Organic semiconductors capable of ambipolar transport
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US8669552B2 (en) * 2011-03-02 2014-03-11 Applied Materials, Inc. Offset electrode TFT structure
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US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
KR102168473B1 (ko) * 2013-09-26 2020-10-21 인텔 코포레이션 마이크로전자 디바이스에서 낮은 밴드 갭의 소스 및 드레인 구조체를 형성하는 방법
US9147615B2 (en) * 2014-02-14 2015-09-29 International Business Machines Corporation Ambipolar synaptic devices
CN103972390B (zh) * 2014-05-21 2017-02-15 北京交通大学 一种双极型有机发光场效应晶体管
CN106688050B (zh) 2014-06-11 2018-09-18 伊斯曼柯达公司 具有带含硫代硫酸盐聚合物的电介质层的器件
US20170154790A1 (en) * 2015-11-30 2017-06-01 Intel Corporation Sam assisted selective e-less plating on packaging materials
CN107425035B (zh) * 2017-05-11 2019-11-05 京东方科技集团股份有限公司 有机发光晶体管和显示面板
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Also Published As

Publication number Publication date
EP1704587A1 (de) 2006-09-27
EP1711970A1 (de) 2006-10-18
EP1711970B1 (de) 2008-09-03
JP5552205B2 (ja) 2014-07-16
CN1918722A (zh) 2007-02-21
CN101847689B (zh) 2014-01-01
JP5216217B2 (ja) 2013-06-19
SG149855A1 (en) 2009-02-27
EP1990845A1 (de) 2008-11-12
WO2005069400A1 (en) 2005-07-28
JP2012054566A (ja) 2012-03-15
KR20070004627A (ko) 2007-01-09
US20150221896A1 (en) 2015-08-06
GB0400997D0 (en) 2004-02-18
JP2007518259A (ja) 2007-07-05
CN1918724B (zh) 2010-06-23
KR101142991B1 (ko) 2012-05-24
JP2007523446A (ja) 2007-08-16
CN1918724A (zh) 2007-02-21
WO2005069401A1 (en) 2005-07-28
CN101847689A (zh) 2010-09-29
US20070278478A1 (en) 2007-12-06
JP5329630B2 (ja) 2013-10-30
EP1704587B1 (de) 2015-02-11
EP1990845B1 (de) 2012-10-24
DE602005009495D1 (de) 2008-10-16
US7638793B2 (en) 2009-12-29
CN1918722B (zh) 2010-05-12
US20070295955A1 (en) 2007-12-27

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